使用原子層沉積系統(Atomic Layer Deposition, ALD)沉積氧化鋅(Zinc Oxide, ZnO)薄膜作為氧化鋅(ZnO)奈米柱成長之晶種層。藉由水熱溶液合成法成長氧化鋅(ZnO)奈米柱於晶種層上，以硝酸鋅(Zinc nitrate, Zn(NO3)2)與六甲基四胺(Hexamethylenetetramine, HMTA)為前驅物，不同莫爾濃度、不同反應時間所成長氧化鋅奈米柱。前驅物莫爾濃度為0.1M，反應時間為30min所成長氧化鋅奈米柱深寬比約為10，形貌較佳。
將前驅物莫爾濃度為0.1M，反應時間為30min所成長氧化鋅奈米柱，使用原子層沉積系統(Atomic Layer Deposition, ALD)沉積不同摻鋁比例之摻鋁氧化鋅(Aluminum doped Zinc Oxide, AZO)薄膜在氧化鋅奈米柱上，其成長溫度為280℃，成長週期為36週期(約11.5nm)。披覆不同摻雜鋁比例之摻鋁氧化鋅薄膜的氧化鋅奈米柱與未披覆之氧化鋅奈米柱皆以(002)晶面方向成長，從XRD得知，且由PL得知並無氧缺陷的現象。霍爾測量得知不同摻雜鋁比例之摻鋁氧化鋅薄膜載子濃度會隨著摻雜比例減少而下降，且場發射特性結果也隨著摻雜比例下降，其起始電壓隨著增加，以披覆摻雜鋁比例為1:6之摻鋁氧化鋅薄膜的氧化鋅奈米柱場發效果較佳，起始電壓為13.7 V/μm，最大電流密度為6.53μA/cm2，場發射增強因子β為676。

In this study, we use atomic layer deposition system (Atomic Layer Deposition, ALD) deposition of zinc oxide (Zinc Oxide, ZnO) thin film as seed layer, and then we growth zinc oxide (ZnO) nanorods by hydrothermal method. The precursor of hydrothermal method is prepared with zinc nitrate (Zn (NO3) 2) and hexamethylenetetramine (HMTA). We study morphology of ZnO nanorods which growth in different molar concentration and reaction times. The aspect ratio of ZnO nanorods is the best when precursor molar concentration is 0.1M, and the reaction time is 30min. And then we use ALD system cover AZO (Aluminum doped Zinc Oxide) film on ZnO nanorod. The growth temperature of AZO thin film is 280℃, and the growth cycle is 36 cycle (approximately 11.5nm). We observe ZnO nanorod and ZnO nanorod with AZO crystal orientation are (002) by XRD. There are no anaerobic defect that we observed by PL. Hall measurement shows that carrier concentration of AZO with different Aluminum percent may be reduced, and the results of field emission characteristics along with the doping percent decreased, the turn on voltage increases to drape doped aluminum ratio 1: 6 of the AZO thin film with ZnO nanorods has the best parameter, turn on voltage is 13.7 V / μm, the maximum current density is 6.53μA / cm2, and field emission enhancement factor β is 676.

摘要 i
Abstract iii
致謝 iv
目錄 v
圖目錄 ix
表目錄 xii
第一章 緒論 1
1.1前言 1
1.2研究動機 2
第二章 文獻回顧 3
2.1氧化鋅材料與奈米線 3
2.1.1氧化鋅奈米柱成長方法 4
2.1.2電化學沉積法 4
2.1.3水熱溶液合成法 4
2.1.4微波輔助水熱合成法 5
2.2原子層沉積系統(Atomic Layer Deposition, ALD) 6
2.3場發射理論(Field Emission Theory) 7
第三章 實驗流程 9
3.1實驗材料 9
3.2實驗步驟 11
3.2.1矽(Si)基板(100)預先處理 12
3.2.2 原子層沉積系統(Atomic Layer Deposition, ALD)成長氧化鋅(Zinc Oxide, ZnO)薄膜 12
3.2.3 成長氧化鋅薄膜之實驗流程圖 14
3.2.4氧化鋅(ZnO)奈米柱製備 15
3.2.5 成長氧化鋅(ZnO)奈米柱之實驗流程圖 16
3.2.6 原子層沉積系統(Atomic Layer Deposition, ALD)成長摻鋁氧化鋅(Aluminum doped Zinc Oxide, AZO)薄膜 17
3.2.7 摻鋁氧化鋅薄膜披覆氧化鋅奈米柱之實驗流程圖 18
3.3 製程儀器 19
3.3.1 原子層沉積儀(Atomic Layer Deposition, ALD) 19
3.3.2水熱溶液合成法成長氧化鋅(ZnO)奈米柱製程儀器 22
3.4 量測儀器 23
3.4.1 掃描式電子顯微鏡((Scanning Electron Microscope, SEM) 23
3.4.2 X光反射率(X-ray reflectivity, XRR) 25
3.4.3 X光繞射(X-ray diffraction, XRD) 28
3.4.4霍爾量測(Hall) 30
3.4.5光激螢光光譜儀(Photoluminescence, PL) 32
3.4.6場發射(Field Emission) 33
第四章 結果與討論 34
4.1以原子層沉積系統沉積(ALD)氧化鋅(ZnO)薄膜為氧化鋅(ZnO)奈米柱之晶種層 34
4.2以水熱溶液合成法成長氧化鋅(ZnO)奈米柱 36
4.2.1不同莫爾濃度以硝酸鋅與HMTA成長氧化鋅(ZnO)奈米柱 36
4.2.2 不同反應時間以硝酸鋅與HMTA成長氧化鋅(ZnO)奈米柱 41
4.3氧化鋅奈米柱披覆不同摻雜比例之氧化鋅摻雜鋁(AZO)薄膜 46
4.3.1以原子層沉積系統沉積(ALD)不同摻雜比例之氧化鋅摻雜鋁薄膜 46
4.3.2氧化鋅奈米柱披覆不同摻雜比例之摻鋁氧化鋅薄膜的SEM表面形貌量測 48
4.3.3氧化鋅奈米柱披覆不同摻雜比例之摻鋁氧化鋅薄膜的XRD結構量測 51
4.3.4氧化鋅奈米柱披覆不同摻雜比例之摻鋁氧化鋅薄膜的PL光學特性量測 53
4.3.5不同摻雜比例之摻鋁氧化鋅薄膜的霍爾電性量測 55
4.3.6不同摻雜比例之摻鋁氧化鋅薄膜的場發射特性量測 57
第五章 結論 66
參考文獻 68

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