本實驗分為三個部份，第一部分以ALD沉積10nm厚的氧化鋁薄膜，改變退火條件，找出使氧化鋁薄膜的少數載子生命期提升效果最佳的快速熱退火參數。
第二部份探討濕式氧化形成的氧化鋁薄膜，先以E-Gun在表面鍍上5~10nm厚的金屬鋁，再浸泡過氧化氫及過錳酸鉀使其氧化形成鈍化層，嚐試改變不同的氧化時間，並觀察其退火後的少數載子生命其提升倍率，接著透過XPS及TEM觀察氧化鋁膜的縱深分析及其實際厚度；並且我們也觀察氧化鋁膜退火後閒置於大氣環境中的liftime衰減及再退火後的lifetime。
第三部分則為元件製作的部分，首先量測100nm氮化矽反射層的抗反射效果，接著用SEM觀察背部電擊的局部接觸及BSF的厚度量測，最後量測I-V曲線填充因子達到75.7%，轉換效率為16.72%。

There are three parts in this study: First, we optimized the annealing parameter which led to the best performance in terms of minority carrier lifetime of the wafer which was deposited with a 10nm Al2O3 thin film on the rear surface by ALD.
The characteristics of an Al2O3 thin film formed by wet oxidation will be analyzed in part two. We deposited an about 7 nm thick aluminum film on the rear surface of a phosphorus diffused multi-crystalline silicon wafer by an E-gun evaporator. After that, the wafers were dipped into solutions of H2O2 and KMnO4, respectively, in order to form an Al2O3 passivation layer. At different oxidation time, we observed the improvement of the minority carrier lifetime after annealing under the best condition that we found at part one. The concentration distribution and the thickness of Al2O3 thin film are measured by XPS and TEM measurements, respectively. Furthermore, we observed not only the lifetime decay of those wafers which were placed in the atmospheric environment but also the minority carrier lifetime upon re-annealing.
In part three, we measured the reflectance of a 100-nm SiNx anti-reflection coating layer on the front side. Then, SEM measurements showed the rear local contacts and the thickness of the local BSF followed by I-V measurements of solar cell conversion efficiency. The conversion efficiency of the solar cell under study reached 16.72% in comparison with 15.89% for a reference cell.

第一章 序論 1
1-1 研究背景 1
1-2 文獻回顧 2
1-3 研究目的 7
1-4 論文架構 8
第二章 實驗原理 9
2-1 基礎半導體物理 9
2-1-1 半導體材料 9
2-1-2 晶體結構 10
2-1-3 半導體能帶與光吸收 12
2-1-4 半導體參雜 15
2-1-5 P-N接面 17
2-2 太陽能電池 21
2-2-1 太陽光譜 21
2-2-2 太陽能電池的工作原理 23
2-2-3 太陽能電池等效電路 24
2-2-4 太陽能電池電性參數 27
2-2-5 效率損失及改善方法 30
2-2-6 背表面場(Back Surface Field,BSF) 32
2-2-7 氧化鋁的場鈍化效應 33
2-3 濕式氧化原理 34
2-3-1 氧化還原反應 34
2-3-2 氧化還原電位 35
2-3-3 濕式氧化 35
第三章 研究方法與製程步驟 37
3-1 前置步驟 37
3-2 元件製作流程 39
3-3 量測方法 46
第四章 實驗數據與分析 49
4-1 三氧化二鋁鈍化層討論 49
4-1-1 ALD氧化鋁膜少數載子生命期 49
4-1-2 濕式氧化法的少數載子生命週期討論 52
4-1-3 濕式氧化鋁薄膜的XPS量測 58
4-1-4 過氧化氫氧化鋁膜的TEM量測 63
4-1-5 C-V量測 65
4-1-6 少數載子生命期的衰退 69
4-2 太陽能電池元件 70
4-2-1 元件的反射率量測 70
4-2-2 SEM量測 72
4-2-3 I-V量測及效率 74
第五章 結論 77
參考文獻 79

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