鍺矽波導型光偵測器在高速矽積體光學是很重要的應用元件。由於在矽和鍺之間存在著晶格常數不匹配，所以讓鍺很難直接磊晶在矽基板上。在過去，本實驗室已經在之前成功地整合自我為對準接合和快速熱熔磊晶法的技術來製備出單晶矽鍺異質整合的PIN光偵測器。雖然在此矽鍺界面中仍舊產生出一層矽鍺氧化物的薄膜而造成界面有些許缺陷。
在本篇論文中，我們打算利用快速熱熔磊晶法(RMG)來製備出鍺-氮化矽-矽的穿隧二極體。由於此穿隧層是利用LPCVD沉積出且其厚度為小於5奈米的薄膜。可發現能顯著地降低暗電流的表現。然而如此薄的穿隧層會影響快速熱熔磊晶時的熱梯度也就是再磊晶的方向性，會使RMG失敗。我們設計新的架構用以調節在RMG時散熱的方向更有一致性，而展示出鍺-氮化矽-矽的穿隧二極體波導型光偵測器。

Ge/Si waveguide photodetectors are important components for high-speed Si photonics applications. However, due to a large lattice constant mismatch between Si and Ge, it is difficult to directly grow Ge on Si substrate. Previously, we successfully demonstrate a single crystal Ge-Si heterojunction PIN photodetector through the technology of self-aligned micro-bonding and rapid melt growth method (RMG) on SOI waveguides. Nevertheless, it still creates a thin interfacial layer made of Si, Ge and O, which may introduce a lot of defects at the interface.
In this research work, we propose using the RMG method to make a Ge-Si3N4-Si tunneling photodiode. With this thin tunneling layer that is typically less than 5 nm, the dark current can be significantly reduced due to a much high-quality tunneling layer made by LPCVD. However, such a thin tunneling layer will impact the temperature gradient profile of the crystal re-growth during the RMG process, which may make RMG fail. We design a new structure to regulate the direction of thermal dissipation for the RMG process and demonstrate a Ge-Si3N4-Si tunneling diode waveguide photodetector.

Abstract I
摘要 II
致謝 III
目錄 IV
圖目錄 VI
表目錄 IX
第一章 緒論 10
1.1 前言 10
1.2 研究動機與目的 11
1.3 論文架構 13
第二章 理論背景 14
2.1 鍺和PIN二極體光偵測器的介紹[2, 3] 14
2.2 矽與鍺異質整合的問題[5] 16
2.3 快速熱熔磊晶法原理[6] 17
2.4 自我對準微接合[9] 23
2.5 穿隧效應[10] 27
第三章 元件設計 31
3.1 絕熱於主動區 33
3.2 散熱梯度方向 35
3.3 光柵設計[12, 13] 38
3.4 結構設計及印證 39
第四章 元件製作 41
4.1 元件製作流程圖 41
4.2 元件製作細節以及重要參數 44
4.3 製程元件的詳細流程(以第二版為主)： 47
第五章 實驗量測與分析 55
5.1 第一板製程的結果 55
5.2 第二版製程的電性量測 59
第六章 結果與討論 64
6.1 結論 64
第七章 參考資料 65

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