太陽能電池的發展，一直都是追求效率的提升，或是成本的下降。利用N型矽基板製作的太陽能電池對金屬雜質的容忍度較P型矽基板高，也不會有光致衰減等問題，對於相同的製作成本，N型太陽能電池有機會製作出較高的光電轉換效率。本篇將利用硼離子佈植進行摻雜，摻雜後還需要退火，用來活化硼和修復晶格損傷。因此對於硼摻雜以及退火的最佳條件，將利用少數載子生命週期和片電阻來尋找。P型太陽能電池都會沉積一層抗反射層，增加對光的吸收，因此對於最佳抗反射層的厚度，將利用對光的反射率進行尋找。燒結是製作太陽能電池的最後一步，燒結的最佳條件則是利用填充因子來做判斷。最後，將這些最佳條件再運用到製程上，製作出N型太陽能電池。

In the development of solar cells, it is the mainstream to look for a method of raising conversion efficiency or cost down. Compared with P-type solar cells, N-type solar cells have no light-induced degradation and have higher tolerance in metal impurity. At the same production costs, N-type solar cells have the potential to be produced with higher conversion efficiency. In this thesis, we use an ion implantation to dope boron into samples. After the ion implantation process, we use annealing to activate boron and repair lattice damage. We find the parameters of boron ion implantation and annealing to obtain the optimal minority carrier lifetime and sheet resistance. In the fabrication of P-type solar cells, it is common to deposit anti-reflection layer to enhance absorption of light. We find the best thickness of anti-reflection layer to achieve low reflectivity. Finally, we find the best co-firing condition to obtain the best fill factor. Then, we fabricate our N-type solar cells in accordance with these best parameters.

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vii
表目錄 x
第一章 簡介 1
1.1 研究背景 1
1.2 文獻回顧 2
1.3 研究動機與目的 6
1.4 論文架構 7
第二章 原理 8
2.1 半導體物理 8
2.1.1 材料的分類 8
2.1.2 能帶理論 10
2.1.3 P型半導體與N型半導體 12
2.1.4 PN-JUNCTION 13
2.1.5 順偏與逆偏 14
2.1.6 電子電洞的產生與復合 15
2.2 太陽能電池原理 17
2.2.1 太陽光簡介 17
2.2.2 太陽能電池發電原理 18
2.2.3 太陽能電池等效電路 19
2.2.4 太陽能電池參數 22
2.2.5 太陽能電池效率損失 23
2.3 離子佈植 24
2.4 背表面場 25
第三章 實驗方法 26
3.1 實驗目的 26
3.2 儀器介紹 26
3.3 實驗步驟 31
RCA Clean 32
表面粗糙化 33
硼離子佈植 33
熱退火 35
沉積二氧化矽 36
磷擴散 36
磷玻璃去除 37
SiNx抗反射層沉積 37
網印電極 38
電極共燒 39
邊緣隔絕 39
第四章 實驗結果與討論 40
4.1 硼離子佈植的最佳化參數 40
4.1.1 生命週期討論 42
4.1.2 片電阻討論 45
4.1.3 SIMS 46
4.1.4 最佳抗反射層厚度 48
4.1.5 燒結溫度 50
第五章 總結 52
參考資料 54

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