隨著資訊及科技發展爆炸性的進步，使用者個人資料的安全逐漸受到了重視；其中相關的協定，由電機電子工程師學會(IEEE)制定了IEEE802.15等短距離通訊之相關協定(WLAN/WPAN)，60-GHz系統應用憑藉著先天優勢近年來吸引了許多學界與業界的關注與研究。功率放大器由於是將小訊號放大至大訊號並發射至空氣介質當中，所以功率、線性度以及效率都是其關注的規格；隨著操作頻率的提升，功率放大器的設計越來越難。
此論文中探討了三個V頻段的功率放大器，並由台積電90奈米製程實現了其中兩個功率放大器。第一個設計是探討傳統適應性偏壓與本文所提之多級適應性偏壓之差異性；模擬的結果可以發現在小功率之功率附加效率相較於傳統適應性偏壓有明顯的提升。第二個設計主要是以第一個設計為基準，將多級適應性偏壓應用於第二的個設計，並提出適合的適應性偏壓電路；第二個設計量測之線性功率增益可達17.1 dB且最高功率附加效率可達16.1%。第三個設計是為了提升整體的輸出功率，探討了數個功率結合的方法與文獻後採取了變壓器之設計；量測之結果線性增益可達13.4 dB、輸出飽和功率可達13.66 dBm、最大功率附加效率可達10.16%，在1 dB壓縮點下，輸出功率達11.6 dBm，功率附加效率達8.3%。

The secured short-range communication, such as IEEE 802.15 particularly for personal area network (PANs), draws great attentions recently. 60-GHz applications are exploited since this spectrum experiences strong attenuation in the air that makes the wireless local area network (WLAN) and wireless personal area network (WPAN) more secured. Among the millimeter-wave integrated circuits, power amplifiers are the most starving and difficult to design due to its large-signal operation and non-linearity by nature.
In this thesis, three V-band power amplifiers (PAs) are proposed and two of them (work B and C) are implemented by TSMC 90-nm 1P9M (GUTM) CMOS process. The first design (work A) presents one new idea of multi-stage adaptive biasing technique that is different from conventional adaptive biasing scheme on power stage and this technique focuses more on the enhancement in the back-off efficiency verified in simulations. Based on the first design, the new adaptive biasing technique is realized in work B. It achieves a power gain of 17.1 dB, an output 1-dB compression point (OP1dB) of 6.1 dBm, and a maximum power-added-efficiency (PAE) of 16.1% at 48 GHz. To further enhance the delivered output power, the last work (work C) combines the proposed adaptive biasing circuits and transformer-based power combining technique. Work C presents a linear gain of 13.4 dB, an output saturation power (Psat) of 13.66 dBm and a peak PAE of 10.16%. At 1-dB compression point, OP1dB and PAE1dB are 11.6 dBm and 8.3%, respectively.

ABSTRACT I
CONTENTS II
LIST OF FIGURES V
LIST OF TABLE XI
CHAPTER 1 INTRODUCTION 1
1.1 Introduction to Millimeter-Wave Applications 1
1.2 WPAN/WLAN 2
1.3 60-GHz Regulations [4] 3
1.4 Thesis Organization 4
CHAPTER 2 OVERVIEW OF POWER AMPLIFIER 6
2.1 Introduction 6
2.2 Important Parameters of Power Amplifier 7
2.2.1 Power 7
2.2.2 Efficiency 8
2.2.3 Linearity 10
2.2.4 Stability 13
2.3 90-nm CMOS Process 15
2.3.1 Active Device 15
2.3.2 Passive Device 22
CHAPTER 3 IMPEDANCE TRANSFORMATION 23
3.1 LC Resonant Matching 23
3.1.1 Basic Inductor 23
3.1.2 On-Chip Inductors 24
3.1.3 Inductors EM 26
3.2 Transformer Matching 29
3.2.1 Basic Transformer 29
3.2.2 Transformer EM 31
3.3 Optimum Impedance of Power Amplifier 42
CHAPTER 4 A V-BAND POWER AMPLIFIER WITH BIASING CONTROL TECHNIQUE 45
4.1 Paper Survey 45
4.1.1 Doherty Technique 45
4.1.2 Dual-mode Technique 46
4.1.3 Adaptive Biasing Technique 47
4.2 Circuit Design 51
4.2.1 Design Flow 51
4.2.2 Active Device Considerations 52
4.2.3 Work A 55
4.2.4 Work B 64
4.3 Simulation and Measurement Results 77
4.3.1 Small-signal Parameters 78
4.3.2 Large-signal Results 81
4.3.3 Linearity, IIP3 82
4.4 Discussion and Conclusion 83
CHAPTER 5 A V-BAND TRANSFORMER-BASED COMBINING POWER AMPLIFIER WITH MULTI-STAGE ADAPTIVE BIASING CONTROL 84
5.1 Paper Survey 84
5.1.1 Wilkinson Combiner 84
5.1.2 Transmission Line Combiner 85
5.1.3 Transformer-based Combiner 86
5.2 Circuit Design 87
5.2.1 Transformer Design 87
5.2.2 Core Circuit 92
5.2.3 Impedance transformation 94
5.3 Simulation and Measurement Results 99
5.3.1 Simulation Results 99
5.3.2 Measurement Results 101
5.4 Discussion and Conclusion 108
CHAPTER 6 CONCLUSION AND FUTURE WORK 110

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