|
[1] ITRS. Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications. 2007. [2] C. H. Doan, S. Emami, A. M. Niknejad and R. W. Brodersen, "Millimeter-wave CMOS design," IEEE J. Solid-State Circuits (JSSC), vol. 40, no. 1, pp. 144-155, Jan. 2005. [3] Y.-S. Jiang, Z.-M. Tsai, J.-H. Tsai, H.-T. Chen, and H. Wang, “A 86 to 108 GHz amplifier in 90 nm CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 2, pp. 124–126, Feb. 2008. [4] Ning Zhang, Chih-Ming Hung, Kenneth, K. O., “80-GHz Tuned Amplifier in Bulk CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 2, pp. 121-123, Feb. 2008. [5] D. Sandstrom, M. Varonen, M. Karkkainen, and K. Halonen, “W-band CMOS amplifiers achieving +10dBm saturated output power and 7.5dB NF,” IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2009, pp. 486 - 487. [6] Huei Wang, Kwo-Wei Chang, D. C. W. Lo and Gee Sam Dow, “W-band MMIC-based component development and applications,” Frequency Control Symposium, 1995. 49th., pp. 190-204, Jun. 1995. [7] B. Razavi, “Noise” in Design of Analog CMOS Integrated Circuits, 2nd ed., Boston: McGraw-Hill, 2001, pp. 209-224. [8] A. V. Der Ziel, "Thermal Noise in Field-Effect Transistors, “Proceedings of the IRE”, vol. 50, no. 8, Aug. 1962, pp. 1808-1812. [9] D. J. Allstot, Xiaoyong Li and S. Shekhar, "Design considerations for CMOS low-noise amplifiers," Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE, pp. 97-100, Jun. 2004. [10] M. Khanpour, K. W. Tang, P. Garcia and S. P. Voinigescu, "A Wideband W-Band Receiver Front-End in 65-nm CMOS," IEEE J. Solid-State Circuits (JSSC), vol. 43, no. 8, pp. 1717-1730, Aug. 2008. [11] S. Guo et al., "54 GHz CMOS LNAs with 3.6 dB NF and 28.2 dB gain using transformer feedback Gm-boosting technique," Solid-State Circuits Conference (A-SSCC), 2014 IEEE Asian, KaoHsiung, 2014, pp. 185-188. [12] H. Samavati, H. R. Rategh, and T. H. Lee, “A 5-GHz CMOS wireless LAN receiver front-end,” IEEE J. Solid-State Circuits (JSSC), vol. 35, no. 5, pp. 765–772, May 2000. [13] B. Heydari, M. Bohsali, E. Adabi, and A. Niknejad, “Low-power mm-wave components up to 104 GHz in 90 nm CMOS,” IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2007, pp. 200–597. [14] Y.-S. Jiang, Z.-M. Tsai, J.-H. Tsai, H.-T. Chen, and H. Wang, “ A 86 to 108 GHz amplifier in 90 nm CMOS,” IEEE Microw. Wireless Compon. Lett., vol. 18, no. 2, pp.124–126, Feb. 2008. [15] Chien-Hsiung Liao; Cheng-Huang Hsieh; Hu, R.; Dow-Chih Niu; Yu-Shao Shiao, "W-band 90nm CMOS LNA design," 2012 Asia Pacific Microwave Conf. Proceedings, Kaohsiung, Dec. 2012, pp. 430-432. [16] G. Gonzalez, Microwave Transistor Amplifiers: Analysis & Design. New Jersey: Prentice Hall, 1996, pp 325-330. [17] T. Yao, M. Q. Gordon, K. K. W. Tang, K. H. K. Yau, M.-T. Yang, P. Schvan, and S. P. Voinigescu, “Algorithmic design of CMOS LNAs and PAs for 60-GHz radio,” IEEE J. Solid-State Circuits (JSSC), vol. 42, no. 5, pp. 1044–1057, May 2007. [18] B. Razavi, “Mixers,” in RF Microelectronics, 2nd ed., New Jersey: Prentice Hall, 2012, pp. 337-425. [19] H. Darabi and A. A. Abidi, "Noise in RF-CMOS mixers: a simple physical model," IEEE J. of Solid-State Circuits (JSSC), vol. 35, no. 1, pp. 15-25, Jan. 2000. [20] Boyu Hu, Xiaopeng Yu and Lenian He, “A Group-Selected and Gain Controllable CMOS Active Mixer for UWB Applications”, 2010 IEEE International Conf. Ultra-Wideband, Nanjing, Sept. 2010, pp. 1-4. [21] Jeng-Han Tsai, Hong-Yuan Yang, Tian-Wei Huang, and Huei Wang, “A 30-100-GHz wideband sub-harmonic active mixer in 90-nm CMOS technology," IEEE Microw. Wireless Compon. Lett., vol. 18, no. 8, pp. 554-556, Aug. 2008. [22] F. Zhang, E. Skafidas, and W. Shieh, “A 60-GHz double-balanced Gilbert cell down-conversion mixer on 130 nm CMOS,” 2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Honolulu, HI, June. 2007, pp. 141-144. [23] B. Razavi, "Design of Millimeter-Wave CMOS Radios: A Tutorial," IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 56, no. 1, pp. 4-16, Jan. 2009. [24] J. H. J. Yu, C. H. Liao, C. H. Hsieh, R. Hu and D. C. Niu, "77–110GHz 90nm-CMOS receiver design," 2013 Asia-Pacific Microwave Conf. Proceedings (APMC), Seoul, Nov. 2013, pp. 233-235. [25] H. Y. Su, R. Hu and C. Y. Wu, "A 78-102 GHz Front-End Receiver in 90 nm CMOS Technology," Microwave and Wireless Components Letters, vol.21, no.9, pp.489-491, Sept. 2011. [26] Khanpour, M.; Tang, K.W.; Garcia, P.; Voinigescu, S.P., "A Wideband W-Band Receiver Front-End in 65-nm CMOS," IEEE J. Solid-State Circuits (JSSC), vol.43, no.8, pp.1717-1730, Aug. 2008. [27] Laskin, E.; Khanpour, M.; Aroca, R.; Tang, K.W.; Garcia, P.; Voinigescu, S.P., "A 95GHz Receiver with Fundamental-Frequency VCO and Static Frequency Divider in 65nm Digital CMOS," IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, Feb. 2008, pp.180-605. [28] C. Weyers, P. Mayr, J. W. Kunze and U. Langmann, "A 22.3dB Voltage Gain 6.1dB NF 60GHz LNA in 65nm CMOS with Differential Output," 2008 IEEE International Solid-State Circuits Conf. - Digest of Technical Papers, San Francisco, CA, 2008, pp. 192-606. [29] G. Nikandish and A. Medi, "Transformer-Feedback Interstage Bandwidth Enhancement for MMIC Multistage Amplifiers," IEEE Trans. Microw. Theory Tech. (TMTT), vol. 63, no. 2, pp. 441-448, Feb. 2015. [30] H. G. Han, D. H. Jung and T. W. Kim, "A 2.88 mW +9.06 dBm IIP3 Common-Gate LNA With Dual Cross-Coupled Capacitive Feedback," IEEE Trans. Microw. Theory Tech. (TMTT), vol. 63, no. 3, pp. 1019-1025, Mar. 2015.
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