本論文將石墨烯/多晶矽光二極體整合於MOSFET元件的閘極端，在不同光強下，石墨烯/多晶矽光二極體會產生相對應的光電壓加諸於閘極上，改變通道電流大小，光訊號可以光電流或光電壓模式輸出。
實驗部分，本論文嘗試將石墨烯材料整合於半導體製程中，以高溫銅金屬催化的方式化學氣相沉積大面積、均勻單層石墨烯，石墨烯會轉移至閘極氧化層上方，並成長多晶矽於石墨烯表面形成閘極感光結構。最終石墨烯光偵測元件會實際應用於8×8影像陣列電路裡。
量測結果顯示，CVD石墨烯成功整合於CMOS半導體製程中，但製程仍有很大的優化空間；石墨烯光偵測器在低照度下會有明顯的光電壓變化量，可望應用於弱光偵測，改善動態範圍。

In this study, the graphene/polycrystalline silicon photodiode was merged into the gate of metal-oxide-semiconductor field effect transistor (MOSFET). The graphene/polycrystalline silicon photodiode grenerates corresponding photovoltage on the gate under different intensity of illumination and causes the modulation of channel current. The light signal can be read out by photocurrent mode or photovoltage mode.
In the part of experiment, the study tried to integrate the graphene material into CMOS semiconductor process. The uniform, monolayer, large area graphene was produced on a copper foil by chemical vapor deposion at high temperature and was transferred to the top of gate oxide. Then a polycrystalline silicon layer was deposited on graphene to form the photodiode structure. The graphene photodetector will be applied in 8×8 image sensor array eventually.
The measurement showed that the CVD graphene was integrated into CMOS semiconductor process successfully, but the processes still needs optimization a lot. The graphene/polycrystalline silicon photodetector possesses exceptionally high photovoltage under weak illumination, making it suitable for detecting weak signal, which improves the dynamic range of image sensors.

摘要 I
ABSTRACT II
致謝 III
目錄 IV
第一章 前言 1
1.1 石墨烯材料的發展與應用 1
1.2 研究動機 4
1.3 論文章節架構 5
第二章 石墨烯的基礎特性與製備方法 6
2.1 石墨烯的物性與電性介紹 6
2.1.1 石墨烯的晶格結構 6
2.1.2 石墨烯的電子能帶 8
2.2 石墨烯的製備方法 10
2.2.1 機械剝離法 11
2.2.2 氧化還原法 12
2.2.3 液相剝離法 12
2.2.4 化學氣相沉積法 13
2.3 石墨烯的拉曼光譜分析 15
2.3.1 拉曼散射基本原理 15
2.3.2 石墨烯的拉曼光譜 16
2.3.3 石墨烯拉曼光譜的判讀 18
第三章 石墨烯光偵測器 21
3.1 蕭特基接面 21
3.2 石墨烯/N型矽蕭特基接面光偵測器 25
3.3 光偵測器特性參數 30
第四章 影像感測陣列電路設計 31
4.1 實驗流程 31
4.2 建構HSPICE MODEL 32
4.2.1 MOSFET元件模擬 32
4.2.2 建立MOSFET的BSIM 34
4.3 陣列電路設計 38
4.3.1 石墨烯影像偵測器之像素架構 38
4.3.2 輸出緩衝器 40
4.3.3 時序與行列控制電路設計 41
4.3.4 整體電路模擬測試 44
4.3.5 電路的佈局(光罩圖) 46
第五章 石墨烯影像光偵測器之實作 49
5.1 前段製程 49
5.1.1 光罩製作 49
5.1.2 晶圓的規格 50
5.1.3 晶圓的預處理 51
5.1.4 形成N井 52
5.1.5 形成P井 54
5.1.6 N井與P井退火 55
5.1.7 成長閘極氧化層 56
5.2 石墨烯的成長 57
5.2.1 高溫金屬催化成長石墨烯 57
5.2.2 石墨烯成長機制與控制參數 59
5.2.3 銅箔的預處理 60
5.2.4 常壓化學氣相沉積(APCVD)石墨烯 61
5.2.5 感應耦合型電漿化學氣相沉積(ICP CVD)石墨烯 64
5.2.6 高溫銅催化成長石墨烯的實驗結果 66
5.3 石墨烯的轉移 68
5.3.1 石墨烯支撐層的選擇與旋塗 69
5.3.2 蝕刻成長於銅箔背面的石墨烯 70
5.3.3 蝕刻銅箔 71
5.3.4 石墨烯的漂洗 72
5.3.5 轉移石墨烯與烘烤 72
5.3.6 移除支撐層 73
5.3.7 石墨烯圖案化 74
5.4 後段製程 77
5.4.1 閘極製作 77
5.4.2 N型源極/汲極離子佈植 80
5.4.3 P型源極/汲極離子佈植 81
5.4.4 源極/汲極退火 82
5.4.5 清除閘極氧化層 83
5.4.6 成長介電層ILD0與接觸窗的建立 83
5.4.7 鎢栓塞與第一層金屬連線 86
5.4.8第二層金屬連線及後續製程 88
第六章 量測與討論 90
6.1 量測儀器介紹 90
6.2 元件量測 91
6.2.1 NMOS與PMOS元件特性 91
6.2.2 石墨烯光偵測器 96
第七章 結論與未來展望 102
參考文獻 103

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