本研究主要利用PZT壓電薄膜搭配SOI的製程平台進行壓電麥克風的製作與實現，並提出不同於典型的結構設計以提升微機電壓電麥克風的感測靈敏度，從結構上的設計增加薄膜產生的應力分布，再透過感測電極的配置讀取訊號，透過有限單元法的模擬的方式進行設計，再由LEM得到壓電式麥克風在聲學上受到背腔的頻率響應與輸出量值大小的趨勢，同時自行製作後端感測的放大電路讀取麥克風元件訊號輸出。麥克風量測平坦區的頻寬約落在213~20k Hz，訊雜比達到65.16dB，相比於典型設計有顯著的增加。最後也針對壓電麥克風感測靈敏度對溫度變化的漂移，經由量測在溫度上升60°C，麥克風訊號輸出有約20%的漂移。

This study proposes sensitivity improvement for MEMS piezoelectric microphone to increase signal to noise ratio. Using finite element analysis and lumped element modal design the microphone structure. And piezoelectric microphone devices were fabricated on lead zirconate titanate (PZT) material and Silicon-on-Insulator (SOI) process. Additionally, charge amplifier circuit increase output signal to detect. After fabrication, measuring the performance of designed microphone and comparing with typical type microphone to verify the feasibility of design. Measurement results show a flat acoustic response between 213Hz~20kHz. The sensitivity of microphone is -25dB (ref. 1V/1Pa) and signal to noise ratio is 65.16dB at 1 kHz which is higher than typical type microphone. Last, the sensitivity variation is about 20% by temperature increasing at ΔT= 60°C.

中文摘要 I
Abstract II
表目錄 XIII
圖目錄 VIII
第一章 緒論 1
1-1前言 1
1-2 文獻回顧 3
1-2-1封閉式振膜壓電麥克風 3
1-2-2懸臂樑壓電麥克風 6
1-2-3其他特殊壓電麥克風 7
1-3研究動機 8
第二章 元件設計與分析 18
2-1感測原理 19
2-2設計概念 23
2-2-1振膜結構設計 23
2-2-2麥克風電容值與電荷輸出 25
2-2-3封裝與等效電路模擬 26
2-2-4麥克風感測電路 28
2-2-5雜訊 29
第三章 製程結果 38
3-1製程流程 38
3-2製程問題與討論 40
3-2-1壓電薄膜乾蝕刻 40
3-2-2背部Deep RIE蝕刻矽草殘留 40
3-3製程結果 41
第四章 量測結果與討論 48
4-1 材料係數量測 48
4-1-1 壓電材料介電係數與介電損失量測 48
4-1-2 壓電係數d31量測 49
4-2 壓電麥克風機械特性 50
4-2-1 元件表面形貌量測 50
4-2-2 機械共振頻量測 51
4-3 壓電麥克風量測電路 51
4-4 麥克風聲學特性量測 52
4-4-1 聲學頻率響應量測 53
4-4-2 訊雜比量測 53
4-4-3 諧波失真量測 54
4-5 麥克風訊號隨溫度變化的漂移 54
4-5-1 壓電係數d31隨溫度飄移量測 55
4-5-2 介電係數隨溫度飄移量測 55
4-5-3 麥克風靈敏度隨溫度變化的漂移 55
第五章 結論與未來工作 72
5.1結果與討論 72
5.2未來工作 73
5-2-1 殘餘應力問題 73
5-2-2 壓電麥克風整合溫度感測器 74
參考文獻 76
附錄A 矩形振膜壓電麥克風 81

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