本研究使用TSMC 0.18μm 1P6M 電路標準製程平台實現一微機電陀螺儀。而使用CMOS平台所製作的微機電陀螺儀，將會面臨在結構懸浮後，殘餘應力翹曲的問題，因此本研究期望透過整合現有文獻中，在結構設計上削減殘餘應力影響的辦法，包含對稱薄膜堆疊與純二氧化矽堆疊等，以期在不改變標準的電路製程參數下，實現一低應力翹曲結構的微機電陀螺儀，並同時仍保有CMOS平台的各式優點，如良好的繞線與線寬定義能力、可與電路及其他類型感測器整合達到單石化(Monolithic)等優勢。至於陀螺儀本身低結構敏感度的缺點，則透過CMOS製程平台小線寬的特性進行補償。

This study implements a MEMS gyroscope by TSMC 0.18μm 1P6M standard CMOS process. The structure which fabricates by this process must encounter the problem of residual stress warping. In order to reduce the deformation of the residual stress, this study integrates several structure design method in existing literatures. The design methods which be implemented in this research including symmetric stack structure and pure oxide structure are expected to achieve a structure of low residual stress warping. By this way, the fabrication parameter of this standard platform would not be modified to fit the demand of structure and the advantage of this platform would also be kept include monolithic integration capability and the good ability of electrical routing. However, for the gyroscope, the problem of low signal response may have chance to be compensated by the advantage of this platform which could make sub-micron sensing gaps.

目錄
中文摘要 I
Abstract II
目錄 III
圖目錄 V
第一章 緒論 1
1-1 前言 1
1-2 規格參數 4
1-3 文獻回顧 6
1-4 研究動機 14
1-5 全文架構 15
第二章 理論分析 24
2-1 原理簡介 24
2-2 機械動態系統分析 26
2-3 電容式致動與感測 29
2-4 訊號輸出 35
第三章 元件設計與模擬 39
3-1 結構設計 39
3-2 結構模擬結果 41
3-3 讀取電路設計與模擬結果 42
3-5 規格預測 43
第四章 製程結果與量測 49
4-1 製程流程與結果 49
4-2 結構翹曲量測 50
4-3 結構模態量測 51
4-4 感測電路響應量測 52
4-5 吸合(Pull-in)電壓量測 53
4-6 角速度訊號量測 53
第五章 結論與未來工作 70
5-1 結論 70
5-2 未來工作 70
5-3 真空模組 71
5-4 雙質量塊結構設計 72
參考資料 75

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