近年來,隨著科技發展,積體電路的後端封裝也趨向高速度、微小化邁
進。其中,尤以高頻段封裝的應用引人興趣。在系統級封裝的趨勢之下,電路
對於電磁干擾屏蔽的要求較以往更甚。藉由濺鍍、蒸鍍、噴塗方式直接對目標
進行封裝,也成為業界關注之重點。不同的電磁波屏蔽機制:吸收損耗與反射
損耗,其影響因子也不盡相同。隨著導磁率上升,吸收損耗會逐漸上升。我們
針對不同材料物系進行調查,並以製程的改變與濺鍍參數的調控,在軟磁薄膜
上建立良好異向性,藉此提高薄膜之導磁率,增進整體屏蔽效率。
首先,針對各軟磁薄膜進行調查,其中包括鈷基、鈷鐵基、鎳鐵基金屬 材料。我們發現:鎳鐵基材料較低之難軸異向性場與鈷基材料較高之飽和磁化 量,皆對於提升材料導磁率有其益處。而足夠高之飽和磁化量與極低之異向性 場 ,使鎳鐵薄膜成為較適於屏蔽之材料。於濺鍍時,外加平行於平面之單向磁 場,可以於薄膜平面上建立單軸異向性,在材料之難軸上,將可達到相當高之 導磁率。以交叉異向性的方式,我們在多方向皆建立了高導磁率之異向性。
為滿足電磁屏蔽之實際應用需求,我們以插入間隔層的方式,將軟磁薄
膜之厚度提升至微米等級,以不破壞材料高導磁率的前提下增加屏蔽膜層之厚
度,並解決了多層膜帶來之附著力、底層問題。最終,以鎳鐵為主要材料,我
們利用軟磁多層膜大幅增加了屏蔽效率,為產學界提供電磁干擾屏蔽之解答。

Recently, the development of technology is faster and faster. People are interested in high frequency application, such as EMI shielding. By sputtering, evaporation, or spraying, conformal shielding can not only be a good shielding method, but also combine with the package directly. In this thesis, we study the shielding mechanism, finding that if the permeability of the film gets higher, the absorption loss could become larger at the same time. As a result, we would try to enhance the permeability to get higher shielding effectiveness.
At first, we established in-plane uniaxial magnetic anisotropy (IPUMA) by applying external magnetic field during sputtering. After controlling the process parameters and investigate several material systems, we found that NiFe thin film exhibits the highest permeability owing to its small anisotropy field (HK) and enough saturation magnetization (MS). Next step, we designed multilayer structure by inserting spacer layer and set crossed anisotropy to make sure permeability is high at every direction.
Finally, the shielding structure is deposited. Several problems like adhesion problem has been solved. The structure composed of soft magnetic multilayer could enhance the shielding effectiveness significantly, providing a possible solution to industry and academia for solving near field EMI problem.

摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vi
表目錄 ix
第一章 緒論與研究動機 1
1.1 前言 1
1.2 研究動機與概述 2
第二章 文獻回顧與相關背景討論 5
2.1 電磁屏蔽 5
2.1.1 屏蔽效率與屏蔽理論 5
2.1.2 保角屏蔽技術發展 12
2.2 高頻應用之薄膜特性 16
2.2.1 軟磁薄膜之要求與特性 16
2.2.2 軟磁薄膜高頻理論 19
2.3 磁性材料性質 23
2.3.1 晶粒大小與導磁率、矯頑場之關係 23
2.3.2 多磁區對軟磁薄膜之影響 25
2.3.3 單軸異向性之建立與調控 29
2.3.4 交叉異向性的建立 34
2.4 軟磁材料系統中的磁損耗 36
第三章 實驗設備與分析儀器 38
3.1 樣品製備 39
3.1.1. 高真空磁控濺鍍系統 39
3.1.2. 磁退火系統 40
3.2 磁性分析儀器 41
3.2.1 震動樣品磁測儀(VSM, vibrating sample magnetometer) 41
3.2.2 聚焦微區磁光柯爾效應量測儀(F-MOKE) 42
3.2.3 高頻導磁率量測儀(3-GHz permeameter) 43
3.3 材料基本性質量測 45
3.3.1 原子力顯微鏡(AFM, atomic force microscopy) 45
3.3.2 X-ray繞射儀(XRD, X-ray diffractometer) 46
第四章 實驗結果與討論 47
4.1 實驗概述 47
4.2 鈷基、鈷鐵基靶材研究 48
4.2.1 CoZrTa 基本磁性研究 48
4.2.2 FeCoCrB 基本磁性研究 52
4.2.3 FeCoTaZr 基本磁性研究 53
4.3 鎳鐵基靶材研究與材料組合 55
4.3.1 NiFe 基本磁性研究 55
4.3.2 材料組合調整異向性 57
4.3.3 NiFe濺鍍條件調整異向性 59
4.3.4 NiFeW 靶材基本磁性研究 63
4.4 多層膜屏蔽結構之設計 65
4.4.1 基板效應 65
4.4.2 底層影響與解決 67
4.4.3 多層膜屏蔽結構附著力之研究 71
4.5 屏蔽效率量測結果 73
第五章 結論 76
第六章 參考文獻 77

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