本實驗使用滴定塗佈的方式，在PET基板上製作分別以P3HT與PCBM為主動層的有機薄膜電晶體，並利用靜電摩擦奈米發電機的原理，加入RH-SiO2與PTFE這兩個移動層，取代傳統閘極電壓的供應，做成接觸摩擦型的有機薄膜電晶體，藉由移動層與PEO介電層的摩擦，讓PEO可以帶有正電或負電，使元件內部產生的電場影響主動層的導電通道大小，控制流經源極與汲極之間的電流。以P3HT為主動層的元件，可以藉由改變移動層與PEO的間距，控制電流從1µA至12µA，最大與最小電流比例為12倍，而以PCBM為主動層的元件，改變移動層與PEO的間距可以控制電流從0.6µA至1.7µA，最大與最小電流比例約為3倍。
實驗上進一步使用旋轉塗佈將P3HT與PCBM結合作為pn接面的元件，研究雙層模的元件特性，並加入RH-SiO2與PTFE移動層，藉由改變移動層與元件之間的距離，調控P3HT與PCBM之間的空乏層大小，可以控制量測到的電流從2nA至63nA，其最大與最小電流比例約為30倍。

By combining the FET and the pn-junction with the triboelectric nanogenerator, we success to fabricate the organic tunable, force-controlled contact electrification field-effect transistor (CE-FET) and pn-junction switcher by using the conductive polymer, Poly(3-hexylthiophene) (P3HT) and Phenyl-C61-butyric acid methyl ester (PCBM), as the active layers. As the inner field formed by the triboelectric potential between the gate and the moving layers, polytetrafluoroethene (PTFE) and RH-SiO2, the drain current can be enhanced from 2.29µA to 11.61µA in the enhancement mode, and decreased from 3.75µA to 0.98µA in the depletion mode. We can also control the depletion zone in the P3HT/PCBM pn-junction by the produced triboelectric potential. The current can be controlled from 2.84nA to 62.31nA.

第一章 緒論 1
1.1 前言 1
1.2 研究動機 3
第二章 文獻回顧 5
2.1 有機半導體 5
2.2 聚(3-己烷基噻吩) (Poly(3-hexylthiophene), P3HT) 7
2.3 (6,6)-苯基-碳61-丁酸甲酯 (Phenyl-C61-butyric acid methyl ester, PCBM) 9
2.4 靜電摩擦奈米發電機 (triboelectric nanogenerator, TENG) 10
2.4.1 垂直分離模式 (Vertical contact-separation mode) 12
2.4.2 水平滑動模式 (Lateral sliding mode) 13
2.4.3 單電極模式 (single-electrode mode) 14
2.4.4 獨立靜電摩擦層模式 (Freestanding triboelectric-layer mode) 15
2.5 靜電摩擦發電機觸碰感測元件 16
2.6 靜電摩擦材料Rice Husk SiO2 (RH-SiO2) 18
2.7 元件結合摩擦奈米發電機 20
2.7.1 光感測元件結合摩擦奈米發電機 20
2.7.2 薄膜電晶體結合摩擦奈米發電機 22
第三章 實驗方法與步驟 26
3.1 有機半導體溶液配置 27
3.2 P3HT與PCBM薄膜電晶體元件的製作 28
3.3 P3HT/PCBM pn接面元件的製作 30
3.4 材料特性分析儀器 31
3.4.1 冷場發射掃描式電子顯微鏡暨能量散佈分析儀器 31
3.4.2 WAG廣角X光繞射分析 32
3.4.3 拉曼光譜儀分析 33
3.5 電性量測系統 34
第四章 結果與討論 36
4.1 薄膜特性分析 36
4.1.1 冷場發射掃描電子顯微鏡分析 36
4.1.2 WAG廣角X光繞射分析 37
4.1.3 拉曼光譜儀分析 38
4.2 有機薄膜電晶體特性分析 39
4.2.1 P3HT傳統薄膜電晶體特性分析 39
4.2.2 增強型P3HT接觸有機薄膜電晶體特性分析 41
4.2.3 空乏型P3HT接觸有機薄膜電晶體特性分析 44
4.2.4 PCBM傳統薄膜電晶體特性分析 47
4.2.5 增強型PCBM接觸有機薄膜電晶體特性分析 49
4.2.6 空乏型PCBM接觸有機薄膜電晶體特性分析 52
4.3 P3HT/PCBM pn接面元件特性分析 55
4.3.1 增強型P3HT/PCBM pn接面元件特性分析 56
4.3.2 空乏型P3HT/PCBM pn接面元件特性分析 59
第五章 結論 62
第六章 未來展望 63
第七章 參考文獻 64

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