本研究為製作高能量解析度的N通道接面型場效電晶體矽漂移偵測器(N-JFET SDD)，用於能量散佈能譜儀系統中偵測材料的特徵X光得到選定區材料所含元素的定性、半定量、面掃描及線掃描資訊。，
N-JFET矽漂移偵測器將FET整合至晶片使信號傳遞路徑減短，且讓初級FET能夠和晶片一同冷卻，減少晶片和FET的熱雜訊影響。藉由保護環設計減少元件內部漏電流，且利用超淺佈植結構以提高低能量X射線能量解析度和元件量子效率。並將窗口端面積增大，使得無感層變薄，可偵測更低能量，提升偵測極限。
訊號量測方面在元件未完成前使用實驗室自製矽p-i-n偵檢器量測241Am(5.468 MeV)時有特徵峰值出現，以空氣當介質配合不同距離觀察α粒子能量衰減情況，並計算阻滯能力驗證其為α粒子，而量測55Fe(5.898 keV)能譜圖發現雜訊過高導致無明顯特徵峰出現。推測主要原因有二，首先55Fe射源和241Am相比每顆粒子能量差了920倍，導致55Fe(5.898 keV)訊號被雜訊所淹蓋，再來偵測器表面由於未真空封裝造成表面汙染，使得在施加偏壓的情況無法因為空乏區的擴展造成雜訊下降，反而隨偏壓上升表面漏電流大幅上升，造成雜訊掩蓋訊號。若是偵測器能夠經由良好的真空封裝排除汙染問題，即有可能看見55Fe(5.898 keV)的能譜圖。

This research is aim to fabricate high energy resolution N-JFET silicon drift detector used in energy dispersive x-ray spectrometer to detect characteristic X-ray of material for composition information of selected region of material. N-JFET silicon drift detector integrates FET into detector chip, which makes shorter path of signal, and decrease thermal noise for cooling with chip simultaneously. Inner leakage current can be decreased with guard ring and enhance energy resolution and quantum efficiency of low energy X-ray with shallow implanted structure; in addition, larger window area leads to thinner dead layer, which can detect lower energy to improve performance of detector.
We have detected characteristic peak of 241Am(5.468 MeV), and verified α particle by calculating stopping power of α particle with different distance in air. However, we have not detected characteristic peak of 55Fe(5.898 keV) because of overhigh noise. There are two possible reason for above result; first, the signal of 55Fe(5.898 keV) is 920 times smaller than 241Am(5.468 MeV). Second, polluted surface of detector causes increase of leakage current with higher bias. Those reasons could make 55Fe(5.898 keV) covered under noise. If contamination problem can be solved with vacuum package, detecting characteristic peak of 55Fe(5.898 keV) is possible.

摘要 i
Abstract ii
誌謝 iii
總目錄 iv
表目錄 ix
圖目錄 x
第一章　緒論 1
1.1 研究背景 1
1.2 研究動機 2
1.3 論文架構 2
第二章　原理及文獻回顧 4
2.1 X光微區分析 4
2.1.1 波長散佈分析儀 (Wavelength Dispersive Spectrometer, WDS) 5
2.1.2 能量散佈能譜儀 (Energy Dispersive Spectrometer, EDS) 5
2.1.3 波長散佈分析儀和能量散佈能譜儀之比較 6
2.2 電子束與試片交互作用 7
2.2.1 特徵X光 (Characteristic X-ray) 7
2.2.1.1 特徵X光之命名 7
2.2.3 連續X光 (Continuous X-ray) 8
2.3 矽偵測器 (Silicon Detector) 9
2.3.1 矽(鋰)偵測器 (Silicon Lithium Solid State Detector) 9
2.3.2 矽p-i-n偵測器 (Silicon p-i-n Detector) 10
2.3.3 矽漂移偵測器 (Silicon Drift Detector) 10
2.3.4 N通道接面型矽漂移偵檢器 (N-JFET Silicon Drift Detector, N-JFET SDD)發展歷程 11
2.4 鈹窗 (Beryllium Window) 18
2.5 能量散佈光譜儀之訊號處理 18
2.5.1 前置放大器 (Preamplifier) 18
2.5.2 主放大器 (Amplifier) 19
2.5.3 多頻道分析儀 (Multichannel analyzers, MCA) 19
2.6 無感時間 ( Dead-time) 20
2.7 偵測器效率 (Detector Efficiency) 20
2.7.1 立體角 (Solid Angle) 21
2.8 雜訊 (Noise) 21
2.8.1 熱雜訊 (Thermal noise) 21
2.8.2 散粒雜訊 (Shot noise) 22
2.8.3 低頻雜訊 (Low frequency noise) 22
2.8.4 微音 (Microphonic noise) 22
2.8.5 漏電流 (Leakage current) 23
第三章　矽偵測器元件設計及實驗裝置架設 24
3.1 矽偵測器工作原理 24
3.1.2 元件設計 25
3.1.3 漂移電場端 25
3.1.4 訊號進入端 25
3.2 基材選擇 26
3.2.1 矽v.s.鍺 26
3.2.2 高阻值之矽晶圓 26
3.3 佈植劑量 27
3.3.1 N通道場效電晶體佈植參數隔離主動區外圍佈植參數 27
3.3.2 N通道場效電晶體佈植參數 27
3.4 空乏區計算 28
3.4.1 自然空乏 28
3.4.2 元件全空乏 30
3.4.3 閥值電壓 30
3.5 元件設計 31
3.5.1 提升偵測極限 31
3.5.2 保護環設計 32
3.5.3 偵測面積大小 33
3.5.4 訊號收集電極設計 34
3.6 N-JFET矽漂移偵檢器製造流程 35
3.6.1 偵測器製造流程 35
3.6.2 黃光微影製程 (Photolithography) 36
3.6.2.1 黃光微影各步驟 37
3.7 微系統製程加工 40
3.7.1 離子佈植和擴散 (Ion implantation and diffusion) 40
3.7.2 快速熱退火 (Rapid Thermal Annealing, RTA) 41
3.7.3 物理氣相沉積 (Physical vapor deposition) 41
3.7.4 化學氣相沉積 41
3.8 真空幫浦 43
3.8.1 排氣式 43
3.8.2 儲氣式 44
3.9 校正射源 45
3.10 實驗裝置架設 46
3.10.1 帶通濾波器 (Band-pass filter) 47
3.10.2 雜訊檢測方法 48
第四章　實驗結果與討論 50
4.1 FET製程結果 50
4.2 偵測器降溫裝置 51
4.3 經過訊號放大電路之能譜圖 52
4.3.1 241Am之能譜圖量測 55
4.4 環境雜訊 59
4.4.1 電源配線 59
4.4.2 線材雜訊 61
4.4.3 經由帶通濾波器後示波器波形的差別 62
4.4.4 109Cd、133Ba及57Co射源量測能譜圖 63
4.5 自製偵測器和商業化偵測器系統電性比較 64
4.5.1 不同偵測器半高寬性質比較 66
4.5.2 商業化偵測器理論及實驗效率比較 72
4.5.3 不同偵測器量測不同射源的能譜圖結果 75
第五章　結論及未來展望 78
5.1 結論 78
5.2 未來展望 79
第六章　參考文獻 81

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