氧化銦鎵鋅(IGZO)具有穩定性高、電子傳輸能力好等優點，使用於薄膜電晶體已有多年，也有不錯的成果，本論文以溶膠凝膠IGZO應用於反式有機太陽能電池中的電子傳輸層，以刮刀在基板為120 ℃上塗佈IGZO，經由爐管退火400 ℃後，其膜厚約20 nm，經乾式光阻定義區域後，使用PBDTTT-C-T[(4,8-bis-(2-ethylhexyloxy)-benzo(1,2-b:4,5-b’)dithiophene)-2,6-diyl-alt- (4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-)-2-6-diyl)])混合PC71BM(poly and [6,6]-Phenyl C71 butyric acid methyl ester)做為主要的主動層材料製作成元件，效率最高可達6.2%，本論文進一步研究不同的刮速對於IGZO的成膜性的影響，探討以IGZO製作成反式太陽能電池元件後，IGZO層對於元件效率的影響，本論文元件結構為ITO/ IGZO(20 nm)/organic blend(125 nm)/MoO3(10 nm)/Al(40 nm)。

IGZO has begun to draw more attention due to its higher stability and superior electron mobility. Many studies fabricated the thin film transistor using IGZO as an electron channel with pretty nice result. In this dissertation, we fabricated inverted organic solar cells with sol-gel processed IGZO as electron-selective layer. The IGZO precursor solution was deposited by blade coating with substrate heating at the 120 ℃ and hot wind. Uniform IGZO film around 20 nm can be formed after annealing at 400 ℃. Using the blend of low band-gap polymer poly[(4,8-bis-(2-ethylhexyloxy)- benzo(1,2-b:4,5-b’)dithiophene) -2,6-diyl-alt- (4-(2-ethylhexanoyl)-thieno [3,4-b]thiophene-) -2-6-diyl)] (PBDTTT-C-T) and [6,6]-Phenyl C71 butyric acid methyl ester ([70]PCBM) the highest inverted solar cell efficiency is 6.2% with blade speed of 180 mm/s for IGZO. Besides, blade speed of the IGZO would not only influence the IGZO film but also the power conversion efficiency of the organic solar cell device. The device structure was ITO/ IGZO(30 nm)/organic blend(125 nm)/MoO3(10 nm)/Al(40 nm).

中文摘要 I
Abstract II
誌 謝 III
目 錄 IV
圖索引 VII
表索引 IX
第一章 緒論 1
1.1 研究背景 1
1.1.1 前言 1
1.1.2 太陽能電池之發展 1
1.1.3 有機太陽能電池 3
1.2 研究動機及文獻回顧 5
1.2.1 有機太陽能之優勢 5
1.2.2 反結構有機太陽能電池 6
1.2.3 異質接面結構之有機太陽能電池 6
1.2.4 氧化銦鎵鋅IGZO (Indium-Gallium-Zinc-Oxide) 8
1.2.5 以刮刀塗佈製程製作有機光電元件 8
1.3 論文架構 9
第二章 實驗原理 10
2.1 太陽能電池基本介紹 10
2.1.1 太陽能電池原理 10
2.1.2 理想太陽能電池 10
2.1.3 實際太陽能電池 12
2.1.4 太陽能電池的性能參數 13
2.1.5 太陽能電池操作分析 16
2.2 有機太陽能電池材料特性與操作原理 19
2.3 本論文使用材料 21
2.3.1 主動層材料 21
2.3.2 電子傳輸層材料 22
2.3.3 陰、陽極材料 23
2.4 研究之元件結構圖與能帶圖 23
第三章 實驗製作流程 25
3.1 元件流程 25
3.2 ITO設計及圖像化 25
3.2.1 ITO裁切與清洗 25
3.2.2 乾式光阻黏貼 26
3.2.3 光阻曝光 26
3.2.4 基板顯影 26
3.2.5 基板蝕刻 27
3.2.6 光阻脫膜 27
3.3 基板清洗 28
3.4 電子傳輸層成膜 28
3.4.1 材料配製 28
3.4.2 IGZO成膜 28
3.4.3 IGZO定義區域 29
3.5 主動層成膜 29
3.5.1 材料配製 29
3.5.2 主動層成膜 30
3.6 電極蒸鍍 31
3.7 元件封裝 32
3.8 實驗儀器 32
3.8.1 太陽光模擬系統 32
3.8.2 刮刀塗佈系統 33
3.8.3 X射線光電子能譜(XPS) 34
3.8.4 X光繞射儀(XRD) 34
3.8.5 原子力顯微鏡(AFM) 34
3.8.6 紫外光/可見光光譜儀 35
3.8.7 低能量表面功函數量測儀 35
第四章 結果與討論 36
4.1 IGZO與ZnO的比較 36
4.2 元件漏電的改善 37
4.3 IGZO薄膜對元件的影響 39
4.3.1 不同刮速對IGZO薄膜表面的影響 40
4.3.2 不同刮速的IGZO對元件的影響 42
4.4 PBDTTT-C-T：PC71BM主動層退火 47
第五章 結論 49
參考文獻 50

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