帳號:guest(3.21.248.77)          離開系統
字體大小: 字級放大   字級縮小   預設字形  

詳目顯示

以作者查詢圖書館館藏以作者查詢臺灣博碩士論文系統以作者查詢全國書目
作者(中文):張良順
作者(外文):Chang, Liang-Shun
論文名稱(中文):應用於三維積體電路傳輸系統中的磁感應無線傳輸模組
論文名稱(外文):Magnetic Wireless Interlayer Transmission Module through Perpendicular MTJ for 3D-IC Applications
指導教授(中文):金雅琴
指導教授(外文):King,Ya-Chin
口試委員(中文):蔡銘進
陳冠能
李佩雯
劉怡君
學位類別:博士
校院名稱:國立清華大學
系所名稱:電子工程研究所
學號:102063816
出版年(民國):105
畢業學年度:104
語文別:英文中文
論文頁數:124
中文關鍵詞:三維積體訊號傳輸磁感應無線傳輸線圈應用磁性穿隧介面
外文關鍵詞:Three Dimensional Transmission SystemMagnetic Wireless TransmissionMicro-Coil ApplicationMagnetic Tunneling Junction
相關次數:
  • 推薦推薦:0
  • 點閱點閱:570
  • 評分評分:*****
  • 下載下載:8
  • 收藏收藏:0
近年來,人們對於電子產品的需求越來越高,在達到多功能的同時更須伴隨輕量化的產品重量及更快速的產品效能。透過連接數個積體電路基板與電路晶片,在複合基板上建立起一個或數個多功能晶片,是多功能電子產品的基本架構,因此晶片與晶片之間的封裝技術擔任了電子產品效能好壞與成敗的重要角色。封裝技術是提供不同晶片或不同晶粒之間作訊號傳遞的橋梁,而訊號傳輸的方法又根據使用的基本架構不同而在性能表現上有所差異與區隔。在眾多封裝技術當中,我們可將其大致歸納成以下三類:(1) 系統級晶片 (2) 系統級封裝 (3) 三維積體電路封裝。
一般來說,系統級晶片是將多顆功能性IC整合成一個產品,系統級封裝則是將多顆晶粒整合成一個功能性IC。近年來,三維技術的概念除了被提出之外,更被廣泛地與傳統的二維技術作結合;因為三維傳輸技術在使用上多了一個維度的使用空間,封裝整合後的積體電路面積可大幅下降,頻寬表現上也得以改善。現行的三維積體電路傳輸技術可大致分以下三類,分別是矽穿孔技術、電容耦合模組、及電感耦合模組等三種不同的三維訊號傳遞技術。矽穿孔連線因為能夠提供到目前最高的傳輸密度,加上其異質基板間整合的高相容性,不管在業界與學界都是三維訊號傳遞技術發展的重點項目。但是因為製作時的額外成本較高以及此種技術所面對到的挑戰,像是孔洞完美填充的難度、製作過程中晶圓薄化增加後續製程困難,以及本身的良率檢測方面等重多問題,都影響著矽穿孔技術接下來是否能夠有更進一步的發展。相較之下,另外兩種無線傳輸技術雖然目前在訊號傳輸密度上無法與矽穿孔技術相比較,但是更高的傳輸速度以及製作上的額外成本相對低廉,加上可直接在邏輯製程中加以製作,各種優勢促使著無線傳輸技術在近年來受到越來越多的關注。
本論文以無線傳輸的電感耦合技術作為出發點,透過改變原本的電感接收端架構,改以使用穿隧式磁性接面元件來當作功率接收的角色,期望在整體的功率損耗上能夠有更佳的表現。在本篇論文中,提出一種新型的磁感應無線傳輸模組,而此模組更可應用在三維積體電路傳輸系統當中,我們稱此傳輸技術為磁性傳輸介面。透過高靈敏度的垂直磁場感測元件搭配上微型線圈,本論文成功的將磁感應無線傳輸模組實際應用在數位訊號以及類比訊號的無線傳輸,並成功地驗證其傳輸特性。除此之外,關於訊號接收端、訊號發射端、設計上的擺放考量以及讀取電路等等,本論文也逐一的作出深入的研究與探討。磁性傳輸介面不僅提供了三維積體電路發展的另一種可能性,製作上更能夠透過標準的邏輯製程技術加以完成,在成本的控制上與其他封裝技術相比,並不會造成額外的高成本。相較於傳統的電感耦合技術,除了在持續微縮的可能性上可以透過改變磁性穿隧介面對於線圈的依賴性,更因為使用的磁性穿隧介面作為新的接收端架構,在傳輸的功率損耗上更勝於傳統的電感耦合。
本論文不僅驗證了訊號的無線傳輸,同時也針對發射端的微型線圈進行優化,以及接收端的垂直磁場感測元件結構分析、整體模組的在傳輸時的溫度探討等相關分析也在本論文中加以討論。同時,在本論文中更針對磁性傳輸模組進行改良,提出了多通式磁性傳輸介面的概念,在搭配多組線圈與陣列式磁場感測元件的架構之下,針對模組的傳輸密度以及傳輸功率作進一步的改善,並比較各類型模組之間的特性差異。論文最後,為了讓整體的磁感應傳輸模組效能有更優化的功率表現,在磁性傳輸模組的框架下更進一步地提出了數種磁場集中器架構,同時透過模擬軟體的輔助,驗證磁場集中器對於磁性傳輸介面的傳輸效率優化。
最後,磁性傳輸介面不僅提供了三維積體電路訊號傳輸的一種可能性,同時更可以在標準邏輯製程中製作完成,針對發射端以及接收端的分析討論也在本論文中有著詳細探討。在磁感應傳輸模組的建立之外,多通道的磁感應無線傳輸模型也在本論文中被加以討論。最後,為了達到更佳的傳輸表現,磁場集中器概念的提出也讓磁性傳輸介面的發展,有了另外一種優化的可能性。
Recently, there has been an increase in the demand for smaller and lighter electronic equipment with response and multi-function capabilities data. These multi-function systems required the integration of the IC chips by same/or special process, hence, transmission between chips is critical to the performance of these systems. While packaging technologies have rapidly developed, various system integration schemes have been implemented in recent years, such as, system on chip (SoC), system in package (SiP), and 3D integrated circuit (3D-IC).
In general, there are three types of data transmission schemes in 3D-IC technologies: (1) through-silicon via (TSV), (2) capacitive coupling module and (3) inductive coupling module. TSV technology belongs to “direct contact” transmission method, and has received considerable attention because of its ability to achieve high density connection in heterogeneous integration. However, TSV technologies faces challenges in a lot of problems, such as (a) Additional process flow resulting in high cost, (b) The difficult of perfect via filling (voidless), (c) Wafer thinning resulting in harder manufacturing, (d) Chemical Mechanical Planarization (CMP) uniformity, (e) Yield inspection, etc. Compared to TSV technology, the capacitive coupling module and the inductive coupling module attract more and more interesting by their high data transmission rate, low additional cost, and can directly manufacture in the standard CMOS process. Moreover, those two transmission module featured in high packaging reliability due to wireless characteristic. The capacitive coupling module is the wireless transmission of energy within an electrical network by means of the capacitance between circuit nodes. And a capacitive channel is created by placing small metal plates on two silicon dies and stacking the two dies so that the metal plates are parallel, creates a capacitor. This capacitor connects two circuits by passing an AC signal through it. Capacitive coupling methods have the advantages of simple channel modelling and less crosstalk due to a more confined electrical field. However, its distance of communication is limited to only several microns. Similar to capacitive coupling, inductive coupling is a wireless transmission module, but the transmission mechanism is magnetic rather than electrical. Wireless inductive coupling methods rely on the coupled magnetic field between a planar spiral inductor pair. Chips are stacked face-up and inductively coupled by metal inductors to form a multi-drop bus. However, the challenges of implementing an inductive coupling link include larger inductor area and relatively higher power consumption, as compared to TSVs.
In this thesis, a new wireless 3D IC connection method, Magnetic-sensing Transmission Interface (MTI), is reported for the first time. From the view of inductive coupling but changing the sensor structure, it is expected to achieving a higher operation frequency and a lower power consumption. Signal transmission through the MTI implemented by placing a high-sensitivity sensor with perpendicular magnetic anisotropy on the top of a micro-coil transmitter is successfully demonstrated. This novel embedded perpendicular MTJ (p-MTJ) based on the MTI is proposed for wireless connections in 3D-ICs. The magnetic field of a micro-coil can be centralized on the magnetic sensor for best response, enabling localized data transmission. Compared with inductive coupling between two coils, the receiving end of the magnetic-sensing transmission is replaced by a p-MTJ, which enables highly efficient and localized transmission, leading to lower power and faster connection speed of the module. In addition, the concept of multiple channel MTI module is also introduced and discussed in this thesis. A further design of transmitter-end and receiver-end, the multi-channel MTI can achieve a higher data transmission density and a better power consumption. As last, magnetic field concentrator applied on MTI module is introduced, and four type of concentrator structure are purposed and analysed. Under the same way of transmission but changes the entire transmission structure, the p-MTJ sensor can detect stronger field intensity to reduce the driving coil current, achieving a further better power consumption.
In summary, a new 3D-IC connection method using an MTI has been demonstrated for low power and wide bandwidth data transmission in 3D-IC integration technology. And two types of receiver circuits based on the MTI were proposed and applied in the 3D-IC connection. Moreover, the performance of both receiver circuits has been successfully demonstrated with 0.18 μm CMOS technologies. Using a highly sensitive magnetic sensor, the proposed MTI receives signals at a low vertical magnetic field, leading to much lower transmitting power, whereas its fast spin response and light capacitive load allow for high-speed, low-power and wireless 3D connections.
Abstract ii
中文摘要 v
Acknowledgement vii
Table of Contents viii
List of Table x
List of Figures xi
CHAPTER 1 Introduction 1
1.1 Motivation 1
1.2 Dissertation Organization 3
CHAPTER 2 Integrated Circuit Packaging Technologies 5
2.1 Introduction 5
2.2 Two-Dimensional Integrated Circuit (2D/2.5D IC) 5
2.2.1 System-on-Chip Integration Technology 6
2.2.2 System-in-Package Integration Technology 6
2.3 Three-Dimensional Integrated Circuit (3D-IC) 7
2.3.1 Through-Silicon-Via Technology 8
2.3.2 Capacitive Coupling Module 9
2.3.3 Inductive Coupling Module 9
2.4 Summary 10
CHAPTER 3 Magnetic Transmission Interface 22
3.1 Introduction 22
3.2 Magnetic Transmission Interface 22
3.2.1 Transmission Characteristic 23
3.2.2 Magnetic Sensor Receiver 24
3.2.3 Readout Circuit Design 26
3.3 Magnetic Tunnel Junction (MTJ) Receiver 28
3.3.1 Device Structure 29
3.3.2 Basic Characteristics of the Magnetic Sensor 29
3.4 Micro-Coil Transmitter 31
3.4.1 Inductor Characteristic 31
3.4.2 Optimization on Magnetic Field Generator 32
3.5 Summary 34
CHAPTER 4 Multiple Channel Magnetic Transmission Interface 70
4.1 Introduction 70
4.2 Multi-Channel Magnetic Transmission Interface 71
4.2.1 Magnetic Transmission Characteristic 71
4.2.2 Sensors Array and Readout Circuit 72
4.2.3 Coils and Sensors Array Design 73
4.3 Summary 73
CHAPTER 5 Application of Magnetic Flux Controller on Magnetic Transmission Interface 84
5.1 Introduction of Magnetic Flux Controller 84
5.2 Permeability Material Selection 85
5.3 Combining Flux Controller with MTI 87
5.3.1 Feasible Structure of Flux Controller 87
5.3.2 Simulation Result and Discussion 89
5.4 Summary 92
CHAPTER 6 Conclusion 112
6.1 Conclusion 112
Reference 115
Vita 123
Chapter 1
[1] Chang-Hong Shen, Jia-Min Shieh, Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Chih-Jen Wan, and Chein-Din Lin, “Monolithic 3D Chip Integrated with 500ns NVM, 3ps Logic Circuits and SRAM”, International Electron Devices Meeting (IEDM), pp. 9.3.1- 9.3.4, Dec. 2013.
[2] John Hunt, YC Ding, Adren Hsieh, Jason Chen, and Dinos Huang, “Synergy between 2.5/3D Development and Hybrid 3D Wafer Level Fanout”, Electronic System-Integration Technology Conference (ESTC), pp. 1-10, Sept. 2012.
[3] Pushkar Apte, W. R. Bottoms, William Chen, and Georage Scakise, “Advanced Chip Packaging Satisfies Smartphone Needs”, IEEE Spectrum, Feb. 2008.
[4] Abmed Jerraya, “Introduction: Multiprocessor Systems-on-Chips”, Computer, vol. 38, no. 7, pp. 36-40, July 2005.
[5] Cyrille Laviron, Brendan Dunne, Valérie Lapras, Paola Galbiati, David Henry, and Fabrizio Toia, “Via First Approach Optimisation for Through Silicon Via Applications”, Electronic Components and Technology Conference (ECTC), pp. 14-19, May 2009.
[6] Daisuke Mizoguchi, Yusmeeraz Binti Yusof, Noriyuki Miura, and Tadahiro Kuroda, “A 1.2Gb/s/pin Wireless Superconnect Based on Inductive Inter-Chip Signaling (IIS)”, IEEE International Conf. S Solid-State Circuits (ISSCC), pp. 142-517 vol. 1, Feb. 2004.
Chapter 2
[7] A.K. Sharma, R. Prinja, and S. R. J. Brueck, “Effects of dimensional scaling on the electronic transport properties of silicon nanofilms and nanowires”, IEEE Conf. on Nanotechnology, pp. 746-749 vol. 2, July 2005.
[8] Stefan Goedecker, “Linear scaling electronic structure methods in chemistry and physics”, Computing in Science & Engineering, vol. 5, no. 4, pp. 14-21, Aug 2003.
[9] Abmed Jerraya, “Introduction: Multiprocessor Systems-on-Chips”, Computer, vol. 38, no. 7, pp. 36-40, July 2005.
[10] Peter Nilsson, Pietro Andreani, Krzysztof Kuchcinski, Joachim Rodrigues, Henrik Sjoland, Markus T6rmanen, Lars-Erik Wernersson, and Viktor Owall, “Lessons from Ten Years of the International Master's Program in System-on-Chip”, European Workshop on Microelectronics Education, pp. 187-192, May 2014.
[11] Na Ra Yang, Gilsang Yoon, Jeonghwan Lee, Intae Hwang, Cheol Hong Kim, Sung Woo Chung, and Jong Myon Kim, Improving the System-on-a-Chip Performance for Mobile Systems by Using Efficient Bus Interface”, WRI International Conf. on Communications and Mobile Computing, pp. 606-608, Jan. 2009.
[12] Chee Hong Aw, Li Chuang Quek, and Heng Chuan Shu, “Silicon Level Circuit Implementation for System-On-Chip Power Integrity Improvement”, International Conf. on ICEP-IACC, pp. 748-751, April 2015.
[13] Pushkar Apte, W. R. Bottoms, William Chen, and Georage Scakise, “Advanced Chip Packaging Satisfies Smartphone Needs”, IEEE Spectrum, Feb. 2008.
[14] Philippe Cochet, Roger McCleary, Rich Rogoff, and Rajiv Roy, “Lithography Challenges for 2.5D Interposer Manufacturing”, Electronic Components and Technology Conference (ECTC), pp. 523-527, May 2014.
[15] Akito Yoshida, Shengmin Wen, Wei Lin, JaeYun Kim, and Kazuo Ishibashi, “A Study on an Ultra-Thin PoP using Through Mold Via Technology”, Electronic Components and Technology Conference (ECTC), pp. 1547-1551, May 2011.
[16] Pankaj Kumar, and Naveen HN, “Validating 2.5D System-in-Package inter-die communication on silicon interposer”, Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), pp. 97-100, Dec. 2014.
[17] Shinobu Kato, Tomoyuki Tango, Kiyohisa Hasegawa, Ramesh K. Bhandari, Atsushi Sakai, Hiroshi Segawa, Takashi Kariya, and Toshio Sudo, “Electrical design and characterization of Si interposer for system-in-package (SiP)”, Electronic Components and Technology Conference (ECTC), pp. 1648-1653, May 2009.
[18] Wei-Shen Kuo, Yuan Lin Tzeng, Eason Chen, Jeng Yuan Lai, Yu Po Wang and C.S. Hsiao, “POP Package (Cavity BGA) Warpage Improvement and Stress Characteristic Analyses”, IMPACT, pp. 342-345, Oct. 2007.
[19] Miaowen Chen, Leo Huang, George Pan, Nicholas Kao, and Don Son Jiang, “Thermal Analyses of Package-on-Package (PoP) Structure for Tablet Application”, Electronics Packaging Technology Conference (EPTC), pp. 837-840, Dec. 2014.
[20] Cheryl S. Selvanayagam, John H. Lau, Xiaowu Zhang, S. K. W. Seah, Kripesh Vaidyanathan, and T. C. Chai, “Nonlinear Thermal Stress/Strain Analyses of Copper Filled TSV (Through Silicon Via) and Their Flip-Chip Microbumps”, IEEE Trans. on Advanced Packaging, vol. 32, no. 4, pp. 720-728, July 2009.
[21] Abdul Hamid Bin Yousuf, Nahid M Hossain, and Masud H Chowdhury, “Performance Analysis of Through Silicon Via (TSV) and Through Glass Via (TGV) for Different Materials”, IEEE International Symp. Circuits and Systems (ISCAS), pp. 1957-1960, May 2015.
[22] Cyrille Laviron, Brendan Dunne, Valérie Lapras, Paola Galbiati, David Henry, and Fabrizio Toia, “Via First Approach Optimisation for Through Silicon Via Applications”, Electronic Components and Technology Conference (ECTC), pp. 14-19, May 2009.
[23] Bing-Yue Tsui, Chih-Wei Chen, Shien-Ming Huang, and Shyue-Shyh Lin, “Process Sensitivity and Robustness Analysis of Via-First Dual-Damascene Process”, IEEE Trans. on Semiconductor Manufacturing, vol. 16, no. 2, pp. 307-313, May 2003.
[24] Jean-Philippe Colonna, Perceval Coudrain, Gennie Garnier, Pascal Chausse, Roselyne Segaud, and Christophe Aumont, “Electrical and Morphological Assessment of Via Middle and Backside Process Technology for 3D Integration”, Electronic Components and Technology Conference (ECTC), pp. 796-802, May 2012.
[25] Niranjan Kumar, Sesh Ramaswami, John Dukovic, Jennifer Tseng, Ran Ding, Nagarajan Rajagopalan, and Brad Eaton, “Robust TSV Via-Middle and Via-Reveal Process Integration Accomplished through Characterization and Management of Sources of Variation”, Electronic Components and Technology Conference (ECTC), pp. 787-793, May 2012.
[26] Chao Liu, Aiguo Patrick Hu, and Mickel Budhia, “A Generalized Coupling Model for Capacitive Power Transfer Systems”, IECON, pp. 274-279, Nov. 2010.
[27] Kenji Shiba, and Naomichi Enoki, “Capacitive-Coupling-Based Information Transmission System for Implantable Devices: Investigation of Transmission Mechanism”, IEEE Trans. on Biomedical Circuits and Systems, vol. 7. no, 5, pp. 674-681, March 2013.
[28] Sheng-Feng Hsiao, Ming-Kun Chen, Yi-Lung Lin, Yu-Jung Huang, and Shen-Li Fu, “Co-Simulation of Capacitive Coupling Pads Assignment for Capacitive Coupling Interconnection Applications”, IMPACT, pp. 347-350, Oct, 2011.
[29] S. G. Mc Sweeney, and W. M. D Wright, “Improving the Bandwidth of Air Coupled Capacitive Ultrasonic Transducers Using Selective Networks”, IEEE Ultrasonics Symposium (IUS), pp. 1191-1194, Nov. 2008.
[30] Noriyuki Miura, Daisuke Mizoguchi, Takayasu Sakurai, and Tadahiro Kuroda, “Analysis and Design of Inductive Coupling and Transceiver Circuit for Inductive Inter-Chip Wireless Superconnect”, IEEE Solid-State Circuits, vol. 40, no. 4, pp. 829-837, April 2005.
[31] Daisuke Mizoguchi, Yusmeeraz Binti Yusof, Noriyuki Miura, and Tadahiro Kuroda, “A 1.2Gb/s/pin Wireless Superconnect Based on Inductive Inter-Chip Signaling (IIS)”, IEEE International Conf. S Solid-State Circuits (ISSCC), pp. 142-517 vol. 1, Feb. 2004.
Chapter 3
[32] Ching-Hua Wang, Kun-Yu Dai, Kuei-Hung Shen,Yung-Hung Wang, and Ming-Jinn Tsai, Chrong Jung Lin, and Ya-Chin King”, Magnetic Wireless Interlayer Transmission through Perpendicular MTJ for 3D-IC Applications”, IEEE International Electron Devices Meeting (IEDM), pp. 25.3.1-25.3.4, Dec. 2013.
[33] Liang-Shun Chang, Ching-Hua Wang, Kun-Yu Dai, Kuei-Hung Shen, Ming-Jinn Tsai, Chrong Jung Lin, and Ya-Chin King,” Magnetic Wireless Interlayer Transmission Through Perpendicular MTJ for 3-D IC Applications”, IEEE Trans. on Electron Devices, vol. 61, no. 7, pp. 2480-2485, June 2014.
[34] Meng-Fan Chang, Shin-Jang Shen, Chia-Chi Liu, Che-Wei Wu, Yu-Fan Lin, Ya-Chin King, Chorng-Jung Lin, Hung-Jen Liao, Yu-Der Chih, and Hiroyuki Yamauchi, “An Offset-Tolerant Fast-Random-Read Current-Sampling-Based Sense Amplifier for Small-Cell-Current Nonvolatile Memory”, IEEE Solid-State Circuits, vol. 48, no. 3, pp. 864-877, March 2013.
[35] E. R. Kinser, C. C. H. Lo, A. J. Barsic, and D. C. Jiles, “Modeling Microstructural Effects on Barkhausen Emission in Surface-Modified Magnetic Materials”, IEEE Trans. on Magnetics, vol. 41, no. 10, pp. 3292-3294, Oct. 2005.
[36] Ricardo C. Sousa,and Paulo P. Freitas, “Dynamic Switching of Tunnel Junction MRAM Cell with Nanosecond Field Pulses”, IEEE Trans. on Magnetics, vol. 36, no. 5, pp. 2770-2772, Sep. 2000.
[37] T. Nakano, M. Oogane, H. Naganuma, Y. Ando,” Systematic Investigation on Correlation between Sensitivity and Nonlinearity in Magnetic Tunnel Junction for Magnetic Sensor”, IEEE Conf. Magnetics, pp.1 May 2015.
[38] T. Takenaga, C. Yoshida, Y. Yamazaki, A. Hatada, M. Nakabayashi, Y. Iba, A. Takahashi, H. Noshiro, “MgO Based Magnetic Tunnel Junctions With CoFeB Sensing Layer for Magnetic Field Sensors”, IEEE Trans. on Magnetics, vol. 49, no. 7, pp. 3878-3881, July 2013.
[39] Te-Liang Lee, Yi-Hung Tsai, Wun-Jie Lin, Hsiao-Lan Yang, Chiu-Wang Lien, Chrong Jung Lin, and Ya-Chin King, “A New Differential P-Channel Logic-Compatible Multiple-Time Programmable (MTP) Memory Cell With Self-Recovery Operation”, IEEE Electron Device Letters, vol. 32, no. 5, pp. 587-589, March 2011.
[40] J. J. Nowak, R. P. Robertazzi, J. Z. Sun, G. Hu, David W. Abraham, and P. L. Trouilloud, “Demonstration of Ultralow Bit Error Rates for Spin-Torque Magnetic Random-Access Memory With Perpendicular Magnetic Anisotropy”, IEEE Magnetics Letters, vol. 2, June 2011.
[41] Ankit Singh Kushwah, and Shyam Akashe, “Design of Non-Volatile 4T-2Magnetic Tunnel Junction Based Random Access Memory Cell”, CIPECH, pp. 364-368, Nov. 2014.
[42] Kang L. Wang, Hochul Lee, and Pedram Khalili Amiri, “Magnetoelectric Random Access Memory (MeRAM) based circuit design by using Voltage-Controlled Magnetic Anisotropy in Magnetic Tunnel Junctions”, IEEE Trans. on Nanotechnology, vol. PP, no. 99, pp. 1, July 2015.
[43] Fanghui Ren, Albrecht Jander, Pallavi Dhagat, and Cathy Nordman, “Radiation Tolerance of Magnetic Tunnel Junctions With MgO Tunnel Barriers”, IEEE Trans. on Nuclear Science, vol. 59, no. 6, pp. 3034-3038, Dec 2012.
[44] P. J. Chen, G. Feng, and R. D. Shull, “Use of Half Metallic Heusler Alloys in CoFeB/MgO/Heusler”, IEEE Trans. on Magnetics, vol. 49, no. 7, pp. 4379-4382, July 2013.
[45] T. Takenaga, C. Yoshida, Y. Yamazaki, A. Hatada, M. Nakabayashi, Y. Iba, A. Takahashi, H. Noshiro, K. Tsunoda, M. Aoki, T. Furukawa, H. Ohji, and T. Sugii, “MgO Based Magnetic Tunnel Junctions With CoFeB Sensing Layer for Magnetic Field Sensors”, IEEE Trans. on Magnetics, vol. 49, no. 7, pp. 3878-3881, July 2013
[46] .G. Q. Yu, J. F. Feng, H. Kurt, H. F. Liu, X. F. Han, and J. M. D. Coey, “Field Sensing in MgO Double Barrier Magnetic Tunnel Junctions with a Superparamagnetic Co50Fe50 Free Layer”, J. Appl. Phys. 111, DOI: 10.1063/1.4723836
[47] Seung-Young Bae, and Shan Xiang Wang, “Transport in Magnetically Doped Magnetic Tunnel Junctions”, IEEE Trans. on Magnetics, vol. 38, no. 5, pp. 2721-2723, Sep. 2002.
[48] Chien-Tu Chao, Che-Chin Chen, Cheng-Yi Kuo, Cen-Shawn Wu, Lance Horng, and Shinji Isogami, “Temperature Dependence of Electrical Transport and Magnetization Reversal in Magnetic Tunnel Junction”, IEEE Trans. on Magnetics, vol. 46, no. 6, pp. 2195-2197, June 2010.
[49] Stuart Parkin, Xin Jiang, Christian Kaiser, Alex Panchula, Kevin Roche, and Mahesh Samant, “Magnetically Engineered Spintronic Sensors and Memory”, IEEE Proceedings, vol.91, no. 5, pp. 661-680, May 2003.
[50] Romney R. Katti, “Giant Magnetoresistive Random-Access Memories Based on Current-in-Plane Devices”, IEEE Proceedings, vol. 91, no. 5, pp. 687-702, May 2003.
[51] J. E. Lee, Y. Roh, S. C. Oh, H.-J. Kim, Y. K. Ha, J. S. Bae, I. G. Baek, S. O. Park, U.-I. Chung, and J. T. Moon, “Improved Magnetic Tunnel Junction With Amorphous Seed Layer, Surface Treatment, and High-Polarization Magnetic Materials”, IEEE Trans. on Magnetics, vol. 40, no. 4, pp. 2275-2277, July 2004.
[52] Z. Wnag, W. Zhao, E. Deng, J. Klein, C. Chappert, “A Study of Perpendicular-Anisotropy Magnetic Tunnel Junction Switched by Spin-Hall-assisted spin-transfer torque”, IEEE Conf. Magnetics, pp. 1, May 2015.
[53] Dongwon Lim, Kisu Kim, Sungdong Kim, Won Young Jeung, and Seong-Rae Lee, “Study on Exchange-Biased Perpendicular Magnetic Tunnel Junction Based on Pd/Co Multilayers”, IEEE Trans. on Magnetics, vol. 45, no. 6, pp. 2407-2409, June 2009.
[54] H. Sato1, M. Yamanouchi, K. Miura, S. Ikeda, R. Koizumi, F. Matsukura, and H. Ohno, “CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions”, IEEE Magnetics Letters, vol. 3, April 2012.
[55] Ji Ung Cho, Do Kyun Kim, Tian Xing Wang, Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi, and Young Keun Kim, “Magnetoresistance Variation of Magnetic Tunnel Junctions with NiFeSiB/CoFeB Free Layers Depending on MgO Tunnel Barrier Thickness”, IEEE Trans. on Magnetics, vol. 44, no. 11, pp. 2547-2550, Nov. 2008.
[56] Jing Zhan1, Tianling Ren, Chen Yang, Yi Yang, Litian Liu, Albert Wang, “Design of Magnetic RF Inductor in CMOS”, Tsinghua Science and Technology, vol. 17, no. 1, pp. 78-83, Feb. 2012.
[57] Yongbin Chu, Shuo Wang, Ning Zhang, and Dianbo Fu, “A Common Mode Inductor With External Magnetic Field Immunity, Low-Magnetic Field Emission, and High-Differential Mode Inductance”, IEEE Trans. on Power Electronics, vol. 30, no. 12, pp. 6684-6694, Dec. 2014.
[58] Ren Xie, Longlong Zhangl, Martin Mellincovsk, Adrain Ioinovici, and Dehong Xu, “A New Large DC Gain Converter Based on a Switched-Capacitor-Inductor Circuit in Conjunction with Fuel Cell”, IPEMC, vol. 1, pp. 379-383, June 2012.
[59] Yichao Zhang, and T. M. Jahns, “Current Source Converter with Switched-Inductor DC Link Circuit for Reduced Converter Losses”, ECCE, pp. 1685-1691, Sept. 2014.
[60] Md. Mahbub Reja, Igor Filanovsky, and Kambiz Moez, “A CMOS 2.0-11.2 GHz UWB LNA Using Active Inductor Circuit”, IEEE International Sym. Circuit and Systems, pp. 2266-2269, May 2008.
[61] C. Andriesei, L. Goras, F. Temcamani, and B. Delacressonniere, “Improved RF CMOS Active Inductor with High Self Resonant Frequency”, IEEE International Conf. Electronics, Circuits, and Systems (ICECS), pp. 1092-1095, Dec. 2010.
[62] Venkata Narayana Rao Vanukuru, and Anjan Chakravorty, “Series Stacked Multipath Inductor With High Self Resonant Frequency”, IEEE Trans. on Electron Devices, vol. 62, no. 3, pp. 1058-1062, Feb. 2015.
[63] Sujin Seo, Namsik Ryu, Heungjae Choi, and Yongchae Jeong, “Novel High-Q Inductor using Active Inductor Structure and Feedback Parallel Resonance Circuit”, IEEE Sym. Radio Frequency Integrated Circuits (RFIC), pp. 467-470, June 2007.
[64] Jr-Wei Lin, C. C. Chen, and Yu-Ting Cheng, “A Robust High-Q Micromachined RF Inductor for RFIC Applications”, IEEE Trans. on Electron Devices, vol. 52, no. 7, pp. 1489-1496, July 2005.
[65] Venkata Narayana Rao Vanukuru, and Anjan Chakravorty, “Design of Novel High-Q Multipath Parallel-Stacked Inductor”, IEEE Trans. on Electron Devices, vol. 61, no. 11, pp. 3905-3909, Oct. 2014.
[66] Eric Diller, Shuhei Miyashita and Metin Sitti, “Magnetic Hysteresis for Multi-State Addressable Magnetic Microrobotic Control”, IEEE International Conf. Intelligent Robots and Systems (IROS), pp. 2325-2331, Oct.2012.
Chapter 4
[67] Akiyoshi Uchida, Satoshi Shimokawa, Masakazu Taguchi, Hiroyasu Kawano, Kiyoto Matsui, and Kazuyuki Ozaki, “Phase and Intensity Control of Multiple Coil Currents in Resonant Magnetic Coupling”, IEEE MTT-S International IMWS, pp. 53-56, May 2012.
[68] S. B. Kim, I. Eritate, T. Abe, M. Takahashi, S. Shima, and A. Nakashima, “Development of Magnetic Field Control System Using HTS Bulks and HTS Coil for MDDS”, IEEE Trans. on Applied Superconductivity, vol. 25, no. 3, #4602704, June 2015.
Chapter 5
[69] Huy-Tien Bui, and Sheng-Jye Hwang, “Design of an induction heating coil coupled with magnetic flux concentrators for barrel heating of an injection molding machine”, SAGE Journals, vol. 229, no. 3, pp. 518-527, June 2015.
[70] Matthew J. Chabalko, Jordan Besnoff, and David S. Ricketts, “Magnetic Field Enhancement in Wireless Power with Metamaterials and Magnetic Resonant Couplers”, IEEE Antennas and Wireless Propagation Letters, vol. PP, no. 99, pp. 1, July 2015.
[71] Teodor Leuca, Ştefan Nagy, and Claudiu Mich-Vancea, “Numerical Modeling of the Electromagnetic and Thermal Fields in the Process of Uniform Heating of Half-Products Using Magnetic Flux Concentrators”, International Conf. on Electrical Machines (ICEM), pp. 1-5, Sept. 2008.
[72] M.B.B. ShariJian, K Shaarbafi, J. Faiz, and M.R Feyzi, “Slot Fringing Effect on the Magnetic Characteristics of the Electrical Machines”, IEEE International Conf. on Electronics, Circuits and Systems (ICECS), vol. 2, pp. 778-781, Dec. 2003.
[73] Paul Leroy, Christophe Coillot, Alain F. Roux, and Gérard M. Chanteur, “High Magnetic Field Amplification for Improving the Sensitivity of Hall Sensors”, IEEE Sensors Journal, vol. 6, no. 3, pp. 707-713, June 2006.
[74] M. Schneidel, R. Castagnetti, M. G. Allen, and H. Baltes, “Integrated Flux Concentrator Improves CMOS Magnetotransistors”, IEEE Proc. Micro Electro Mechanical Systems, Feb. 1995.
[75] D. Kim, J. So, K. Woo, and Y. You, “Heating Performance Improvement of an Induction Heating Rice Cooker with Magnetic Flux Concentrator”, IEEE Magnetics Conference (INTERMAG), pp. 1, May 2015.
[76] Xu Sun, Lijun Jiang, and Philip W.T. Pong, “Magnetic Flux Concentration at Micrometer Scale”, Microelectronic Engineering, vol. 111, pp. 77-81, Nov. 2013.
 
 
 
 
第一頁 上一頁 下一頁 最後一頁 top
* *