本研究是利用以石墨烯與不同材料接成的二極體接面形成的感光元件，藉由二極體對於不同光強度下產生出來的光電壓加在MOS的閘極端，改變閘極電壓，進而改變流過MOS通道的電流。
整個實驗步驟從CMOS製程做為基礎，逐步將MOSFET做出來，但在製作多晶矽閘極前將石墨烯轉移在晶圓上並加以圖案化，將多晶矽與石墨烯組成的接面感光元件加在閘極端上。
從量測結果中得到：由多晶矽與石墨烯組成的接面產生的光電壓對MOSFET的汲極電流有還不錯的影響，但一些製程上的缺失經過解決後，可對後續的應用有極大的幫助。

The current study fabricates heterostructure diodes made of graphene and other semiconductor materials. Used in a photodetector configuration, this kind of devices holds the potential of modulating the gate voltage of a MOS device to change the current flow through the transistor.
Experimentally, the device was fabricated following standard CMOS technology procedures. But before the polysilicon gate was fabricated, graphene was firstly transferred and patterned. Once the poly gate was completed, the photodetector heterostructure sat atop the gate.
Measurements show that the use of the poly Si-graphene photodiode can efficiently modulate the current of the MOSFET, but the integration of graphene into the standard CMOS process still requires some degree of refinement before it becomes a mainstream technology.

目錄
第一章 前言…………………………………………………..1
1.1研究背景與動機….………………………......…………………….……………1
1.2論文章節架構….………………………......……………………….……………2
第二章 實驗原理……………………………………………..3
2.1 金屬與半導體的接觸原理….……………….... .…………………….………...3
2.1.1蕭特基接觸………………………………………………………………….4
2.1.2 歐姆接觸……………………………………………………………...…….4
2.2 光二極體運作原理..………………….…………………………....……………5
2.2.1 光吸收原理…………….………..…………….............................................5
2.2.2 光二極體原理………………………………………………………………7
2.3 石墨烯基礎特性…….………………………......................................................9
2.3.1 石墨烯結構與特性…………………………………………………………9
2.3.2 石墨烯製備…………………………………………………………………10
2.4 石墨烯運用於光二極體..………….....................................................................11
2.5 實驗儀器與原理...……………………................................................................15
2.5.1 化學氣相沉積(CVD)……………………………………………………….15
2.5.2 離子佈植系統………………………………………………………………17
第三章 石墨烯與CMOS製程整合………………………...20
3.1 實驗設計流程.….……………………….............................................................20
3.2 元件設計與模擬.………………………..............................................................22
3.2.1 MOS模擬與特性分析…..…………….........................................................22
3.2.2 PMOS……….….………………………........................................................24
3.2.3光二極體…...….………………………........................................................25
3.3 電路設計與模擬分析…..…………….................................................................26
3.3.1電路模擬結果……………………………………………………………….28
3.4 製成步驟設計與光罩設計..………….................................................................29
3.5 CMOS實作過程…..……………..........................................................................38
第四章 量測結果與探討…………………………………….51
4.1 量測儀器介紹…...................................................................................................51
4.2 石墨烯品質量測...................................................................................................52
4.2.1 石墨烯拉曼光譜檢測....................................................................................52
4.2.2 石墨烯光吸收率量測....................................................................................54
4.2.3 Van Der Pauw石墨烯片電阻量測.................................................................57
4.3 元件量測…...........................................................................................................58
4.3.1石墨烯與矽接面….........................................................................................58
4.3.2石墨烯與多晶矽接面.....................................................................................61
4.3.3 石墨烯與多晶矽接面用於MOS閘極端.....................................................63
4.4 量測結果分析與討論...........................................................................................72
第五章　結論………………………………………………...73
參考文獻…...............................................................................74

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