本實驗使用矽基板上磊晶氮化鋁鎵/氮化鎵試片製作新穎light-emitting HEMT，主要研究方向於發光的位置及分佈、不同磊晶層的發光波長調變及改善p-ohmic特性等。
本論文中使用相同製程三種試片: (A)在矽基板磊晶20 nm Al0.25Ga0.75N/GaN HEMT和表層50 nm的p型氮化鎵。(B)在矽基板磊晶20 nm Al0.32Ga0.68N/Al0.07Ga0.93N HEMT和表層50 nm的p型氮化鎵。(C)在矽基板磊晶10 nm Al0.25Ga0.75N/GaN HEMT和表層50 nm的p型氮化鎵。在三種試片的LE-HEMT結構中，最低的Ron,sp = 22 mΩ-cm2左右，最高的Id,max=334 mA/mm都在Sample A量測到。在電性方面藉由薄Ni/Au/ITO的p型氮化鎵接觸，讓Vturn-on從6 V改善至4.5 V。
在發光特性上，則是設計不同的光罩佈局來驗證發光圖形。另一方面則利用不同的磊晶結構來調變發光波長，量測到Sample A的波長為364.42 nm和Sample B的波長為352.27 nm。亦利用CCD影像軟體分析Sample A及Sample C的發光延伸長度，分別為38.4 μm和20.7 μm。

In this thesis, a novel light-emitting HEMT on AlGaN/GaN epitaxial layers on Si substrate were fabricated. This study is focused on light-emitting positions, distribution and wave length modulation with different light emitting GaN epitaxial layers, current conducting layers and p-type ohmic contacts.
Devices on three kinds of epitaxial layers with the same fabrication process were investigated in this study: (A) a 20 nm Al0.25Ga0.75N/GaN HEMT on Si wafer with a 50 nm pGaN cap layer. (B) a 20 nm Al0.32Ga0.68N/Al0.07Ga0.93N HEMT on Si wafer with a 50 nm pGaN cap layer. (C) a 10 nm Al0.25Ga0.75N/GaN HEMT on Si wafer with a 50 nm pGaN cap layer. The observed lowest specific on-resistance among the LE-HEMTs structure is 22 mΩ-cm2 and the highest drain saturation current is 334 mA/mm on Sample A. For the on-state characteristics, the turn-on voltage (Vturn-on) can be improved from 6 V to 4.5 V by using Ni/Au/ITO as the p-type contacts.
For optical properties, we try to study light emitting patterns by different mask layout designs. The wavelength of the emitted light is 364.42 nm on Sample A and 352.27 nm on Sample B, indicating the modulation of wavelength by the epitaxial structures. The extracted characteristic length of the light distribution is 38.4 μm on Sample A and 20.7μm on Sample C, respectively, from images captured by a CCD camera.

中文摘要 I
Abstract II
目錄 III
圖目錄 V
表目錄 VII
第一章 序論 1
1.1 前言 1
1.2 文獻回顧 3
1.3 研究方向簡介與論文架構 10
1.3.1 研究方向簡介 10
1.3.2 論文架構 10
第二章 元件介紹與實驗設計 11
2.1 氮化鋁鎵/氮化鎵材料介紹 11
2.1.1 自發性極化效應 11
2.1.2 壓電性極化效應 12
2.2 基板的選擇 13
2.3 P型氮化鎵歐姆接觸 13
2.3.1 P型氮化鎵活化(activation) 14
2.3.2氧化銦錫(ITO) 14
2.3.3氧化銦錫(ITO)歐姆接觸 15
2.4 元件隔離方式 (Isolation) 16
2.5 實驗設計 17
2.5.1 試片種類 17
2.5.2 光罩設計 18
第三章 光罩設計與元件製程 27
3.1 p-GaN/AlGaN/GaN LE-HEMT 設計流程 27
3.2 溶劑清潔及p型氮化鎵活化 28
3.3 金屬對準記號及P型氮化鎵蝕刻用TLM (Mask 1) 29
3.4 汲極之P型氮化鎵及銦錫氧化薄膜自我對準蝕刻 (Mask 2) 31
3.5源極區域之歐姆接觸 (Mask 3) 33
3.6 定義元件隔離區 (Mask 4) 34
3.7 閘極金屬及襯墊金屬 (Mask 5) 35
3.8表面鈍化層 (Mask 6) 36
第四章 元件量測結果分析 38
4.1 正向電流-電壓量測分析 39
4.1.1 TLM測試元件量測 39
4.1.2 SBD測試元件量測 43
4.1.3 不同磊晶結構的電流電壓特性 45
4.1.4 不同汲極接觸的電流-電壓特性 51
4.2 發光元件設計分析 56
4.2.1 線性及指叉狀發光元件之分析 56
4.2.2 字體及圓形發光元件之分析 59
4.3 調變發光波長及發光延伸長度之分析 60
4.3.1 不同試片對發光波長之分析 60
4.3.2不同試片對發光延伸長度之分析 62
第五章 結論與未來工作 67
參考文獻 70

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