近年來，因消費性電子產品的日新月異，對大容量以及快速存取的記憶體需求大增。快閃記憶體主宰非揮發性記憶體市場，但是快閃記憶體隨著製程的微縮，將面臨到許多困難，例如電荷儲存不易、極高操作電壓以及微縮的物理極限等，這加速了新型非揮發性記憶體之研究，其中又以電阻式記憶體最為看好，可望成為下一世代非揮發性記憶體的主流。
本論文提出一種新型的鰭式場效電晶體介電層電阻式隨機存取記憶體(FINFET Dielectric Resistive Random Access Memory, FIND RRAM)，相容於先進鰭式場效電晶體邏輯製程，此種新電阻式記憶體不用增加額外光罩或特殊製程步驟，並且佈局面積只有0.07632μm2，具有相當高競爭力。藉由電性分析，此電阻式記憶體操作電壓低和快速轉態的特性，並且在可靠度方面設置/重置干擾測試、連續讀取測試及150oC烘烤測試顯示出優秀的特性。
此外，我們成功實現了高密度的1kb NOR型陣列，此電阻式記憶體不需多餘光罩，具有操作快速、超小元件面積、優異的可靠度及製程微縮性等優勢，可望在未來成為相當有競爭力的內嵌式非揮發性記憶體。

Recently ,due to the rapidly developing of commercial electronics, the demands of fast and mass storage devices increase. Flash memory dominates the market of nonvolatile memory. However with the technology scaling down, flash memory come up with many challenge, such as inadequate charge storage, high operation voltage and physical limit, which urges the study of novel nonvolatile memory. In which, RRAM is the most promising candidate for the next generation.
In this studies, we propose a novel FINFET Dielectric (FIND) RRAM, which is fully compatible with FinFET CMOS logic process without extra mask or additional process flow. The cell size of the FIND RRAM is only 0.07632μm2, which is highly competitive. The electrical analysis shows low operation voltage and short switching time. Moreover, excellent set/reset disturb immunity and data retention at 150oC for 1000 hours further prove its superior reliability.
In this dissertation, a highly dense 1kb NOR-type FIND RRAM array is successfully demonstrated.. Without the requirement of extra masks, this cell featuring fast operation speed, extremely small and outstanding reliability and scalability is one of the promising solutions for nonvolatile memory in the near future. 

內文目錄
摘要 i
Abstract ii
致謝 iii
內文目錄 xi
附圖目錄 xiii
附表目錄 xv
第一章 序論 1
1.1 前言 1
1.2 論文大綱 2
第二章 電阻式記憶體文獻回顧 3
2.1 電阻式記憶體介紹 3
2.1.1電阻式記憶體技術回顧 3
2.1.2初始化 4
2.1.3操作特性 5
2.1.4電阻式記憶體模型 5
2.2 電阻式記憶體陣列 6
2.2.1交叉點陣列與連通管原理 6
2.2.2二極體驅動交叉點陣列 7
2.2.3金氧半電晶體驅動陣列 8
第三章 FinFET電阻式隨機存取記憶體 20
3.1 元件結構 20
3.2 量測環境介紹 21
3.3 元件特性及操作最佳化 22
3.4 小結 23
第四章 電阻式隨機存取記憶體之記憶體陣列 38
4.1 陣列結構的比較 38
4.2 陣列量測結果及操作分析 39
4.3 陣列可靠度量測與分析 39
4.3.1 資料儲存性分析 39
4.3.2 讀取干擾分析 40
4.3.3 設置/重置干擾分析 40
4.4 小結 41
第五章 總結 49
參考文獻 50




 
附圖目錄
圖2.1 電阻式記憶體元件結構。 9
圖2.2 CuO崩潰後，電阻轉換現象發生在CuxO混合層中。 10
圖2.3 電阻式記憶體操作極性 11
圖2.4 導通絲路因大電流通過產生的高溫溶解 12
圖2.5 重置操作電流-電壓曲線。 13
圖2.8 二極體驅動電阻式記憶體之示意圖。 16
圖2.9 高密度交叉點陣列 17
圖2.10 由Ni/TiO2/Ni的結構所組成的雙向選擇器。 18
圖3.1 FinFET HKMG RRAM的3D結構圖 24
圖3.2 FIND RRAM元件之(a)佈局圖。(b) NOR型陣列意圖。 25
圖3.3 FIND RRAM之TEM圖。 26
圖3.4 鰭式場效電晶體結構造成轉角效應 27
圖3.5 量測系統示意圖 28
圖3.6 典型的單極性RRAM電阻轉換特性。 29
圖3.7 在不同SL電壓設置下，讀取電流對時間關係圖 30
圖3.8 在不同SL電壓重置下，讀取電流對時間關係圖 31
圖3.9 在脈衝操作下電阻態的週期轉換。 32
圖3.10 WL電壓對LRS讀取電流的關係 33
圖3.11 通道電阻對HRS讀取電流的關係 34
圖3.12 順向與反向讀取示意圖 35
圖3.13 三種電阻態下順向與反向讀取電流 36
圖3.14 讀取視窗最佳化 37
圖4.1 (a)NAND 型陣列示意圖 (b)NOR 型陣列示意圖。 42
圖4.2 1kb FIND RRAM 陣列LRS和HRS的電流分佈。 43
圖4.3 1kb FIND RRAM 陣列設置與重置操作電壓分佈。 44
圖4.4 150OC烘烤1000小時顯示不會影響元件特性。 45
圖4.5 連績讀取測試。 46
圖4.6 (a)設置干擾測試(b)重置干擾測試。 47





 
附表目錄
表4.1 FIND RRAM操作電壓。 48

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