本論文利用二步法成膜平整的優點，以全溶液製程的方式製作出有機-無機混成鈣鈦礦太陽電池元件。使用ITO/PEDOT:PSS/Perovskite/PCBM/Al來做為元件結構，首先研究純碘鈣鈦礦(CH3NH3PbI3)做為主動層之效用，並探討不同PbI2與MAI的比例對元件特性的影響，接著利用一種新穎的方法，藉由添加氯鈣鈦礦(CH3NH3PbCl3)來提高元件之短路電流，我們也利用了此特點，對氯鈣鈦礦進行了一系列的分析，最後經過了多次的實驗改善，成功製作出效率達10.04%之最佳元件，並有著短路電流為19.98 mA/cm2之表現。本論文所提出的方法具有可低溫製程的優點以及良好的穩定性，對於未來欲往大面積化發展的太陽電池是相當有利的。
關鍵字: 鈣鈦礦太陽電池、溶液製程、二步法、氯鈣鈦礦

Taking advantage of the high uniformity of two-step process, a novel all-solution method to fabricate organic-inorganic perovskite solar cells with enhanced short-circuit current was introduced in this thesis. The device structure was ITO/PEDOT:PSS/Perovskite/PCBM/Al. Firstly, using CH3NH3PbI3 as active layer, the effects of the ratio of MAI to PbI2 on the photovoltaic parameters of the device were analyzed. Secondly, the use of CH3NH3PbCl3 as an interlayer was explored and was found to enhance greatly the short-circuit current. With this modified process, the device fabrication processes were optimized and the best power conversion efficiency of 10.04% with a short-circuit current density of 19.98 mA/cm2 were achieved. With its low processing temperature and high stability, our modified process may be a promising approach for the large-area production of perovskite solar cells.
Keywords: perovskite solar cell, solution process, two-step, CH3NH3PbCl

目 錄
摘要 I
Abstract II
目 錄 III
圖索引 V
表索引 VII
第一章 緒論 1
1.1 研究背景 1
1.1.1 前言 1
1.1.2 太陽電池之發展 2
1.1.3 有機太陽電池之發展 3
1.1.4 有機-無機混成鈣鈦礦太陽電池之發展 7
1.2 研究動機與文獻回顧 9
1.2.1 有機-無機混成鈣鈦礦太陽電池之優點 9
1.2.2 平面異質結構鈣鈦礦太陽電池之起源發展 10
1.2.3 p-i-n結構與二步法的發展及添加氯改變元件特性之探討 11
1.3 論文架構 12
第二章 實驗原理 13
2.1 太陽電池基本簡介 13
2.1.1 太陽電池基本操作原理 13
2.1.2 理想太陽電池等效模型 14
2.1.3 實際太陽電池等效模型 15
2.1.4 太陽電池基本參數 16
2.1.5 太陽電池操作分析 21
2.2 論文研究理論 24
2.2.1 主動層材料 24
2.2.2 電洞/電子傳輸層材料 25
2.2.3 陽/陰極材料 27
2.3 元件結構與能帶圖 28
第三章 實驗方法與流程 29
3.1 有機-無機混成鈣鈦礦太陽電池元件製作流程圖 29
3.2 ITO玻璃基板設計及圖樣化 29
3.3 ITO玻璃基板準備及清洗 31
3.4 電洞傳輸層成膜 32
3.5 主動層成膜 33
3.6 電子傳輸層成膜 34
3.7 熱蒸鍍電極 35
3.8 元件封裝 36
3.9 元件量測 36
第四章 實驗結果與討論 38
4.1 純碘鈣鈦礦之p-i-n結構元件 38
4.1.1 二步法介紹 38
4.1.2 碘化亞鉛(PbI2)成膜後處理之比較 39
4.1.3 甲基碘化胺(CH3NH3I, MAI)之濃度與轉速比較 41
4.2 添加氯鈣鈦礦之p-i-n結構元件 43
4.2.1 成膜氯鈣鈦礦 43
4.2.2 SEM分析 45
4.2.3 XRD與XPS分析 48
4.2.4 氯鈣鈦礦濃度比較 51
4.3 添加氯鈣鈦礦之比較分析與元件特性改善 52
4.3.1 甲基碘化胺(CH3NH3I, MAI)濃度比較 52
4.3.2 主動層退火時間比較 54
4.3.3 IPCE及吸收之量測與分析 55
第五章 結論 57
參考文獻 58

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