近年來，消費性電子產品如智慧型手機、穿戴式裝置、平板電腦等的普及以及消費者對於裝置多功能的需求，記憶體容量的提升以及更快的存取速度勢必會隨著科技的發展而被要求。記憶體可簡單的被歸類為揮發性(Volatile)以及非揮發性(Non-volatile)，揮發性記憶體有著極快的寫入以及讀取速度優勢，然而面積大以及物理限制使得此種記憶體很難隨著製程發展微縮，非揮發性記憶體中快閃記憶體(Flash memory)主宰非揮發性記憶體市場，但是即將面臨的極限、高操作電壓以及微縮困難，使得新型記憶體得以加速發展，其中電阻式記憶體有著極高的潛力成為下一世代記憶體主流。
嵌入式電阻記憶體(Embedded RRAM)中代表性結構如點接觸式記憶體(Contact Resistive Random Access Memory, CRRAM)有著極佳的相容性，能夠相容於28奈米之前所有製程，然而隨著製程發展從2D結構進入3D鰭式電晶體，CRRAM勢必需要改良才有辦法在先進製程中實現。
本論文首次提出一種新型的鰭式場效電晶體長形接觸點電阻式隨機存取記憶體(Slot Contact Resistive Random Access Memory, SCRRAM)，相容於先進鰭式場效電晶體邏輯製程，此種新電阻式記憶體不需要增加額外光罩或特殊製程步驟，並且單位元件面積只有0.051μm2，此種電阻式記憶體有著低操作電壓、低功耗、阻態轉換速度快之優點，而電性分析也顯示在直流/交流分析、可靠度、連續讀取測試以及150oC高溫烘烤測試表現出優秀的特性，NOR型陣列結構之可行性使得此種記憶體有很高的機會成為下一世代記憶體發展之主流。

CMOS logic compatible RRAMs have been proposed to meet the requirements of small cell size, fast programming speed, low power consumption, reliable data retention, and good endurance characteristics. However, all of these previous works are all based on a planar CMOS logic process and there is no good solution for FinFET CMOS process until now. By the need of high performance transistors in SOC, HKMG FinFET structure, process and transistor have been widely implemented in advanced CMOS fabrication in the years to come. Based on the new FinFET technology, in this study, a novel slot contact RRAM is proposed and fabricated by the pure 16nm FinFET CMOS logic process without additional process step or mask. The existing Ti-based Transition Metal Oxide (TMO) in FinFET slot contact module is exploited to be a reliable resistive storage node of the new RRAM cell, the n-type epi. SiP and the tungsten metal contact slot are served as bottom and top electrodes, respectively. By using the self-forming Ti-based TMO in FinFET slot contact process, the new SCRRAM is not only fully compatible with FinFET CMOS logic process but it also can operate at a low set voltage of 2.5V and a reset current of 60μA per cell. Moreover, the new FinFET SCRRAM also has excellent RRAM characteristics and superior reliability with an ultra small cell size of 0.051μm2, the results lead the new RRAM technology to become a very promising high density embedded NVM solution in the coming FinFET CMOS era.

摘要………………………………………………………..………..….i
Abstract………………………………………………………………. ii
致謝……………………………………………………………………iii
附圖目錄……………………………………………………………... vi
附表目錄…………………………………………………………….viii
第一章 序論…………………………………………………………...1
1.1 前言…………………………………………………………1
1.2 論文大綱……………………………………………………2
第二章 電阻式記憶體文獻回顧……………………………………...3
2.1 電阻式記憶體介紹…………………………………………3
2.1.1電阻式記憶體技術回顧…………...............................3
2.1.2初始化………………………………………...............5
2.1.3操作特性……………………………….……………4
2.1.4電阻式記憶體模型…………………………………...4
2.2 電阻式記憶體陣列………………………………………… 7
2.2.連通管原理及金氧半電晶體驅動陣列..........................7
2.2.2互補式電阻式記憶體陣列…………………………...7
2.2.3二極體驅動電阻式記憶體陣列……………………...8
2.3 小結………………………………………………………….9
第三章 長形接觸點電阻式記憶體(SCRRAM)………………….…22
3.1 鰭式電晶體結構簡介…………………………………..…22
3.2 SCRRAM之形成………………………………………....23
3.2.1矽鰭邊緣內縮……………………………………….23
3.2.2長形接觸點蝕刻窗錯位…………………………….24
3.3 陣列結構實現以及操作機制.............................................24
3.4 小結……………………………………………………….25
第四章 SCRRAM電性量測與分析………………………………...33
4.1 量測環境介紹…………………………………………….33
4.2 元件特性與操作最佳化………………………………….33
4.2.1直流分析與讀取最佳化………………………….....33
4.2.2交流脈衝分析……………………………………….34
4.3 可靠度量測與分析……………………………………….35
4.3.1資料儲存性分析………………………………...…..35
4.3.2讀取干擾測試……………………………………….36
4.3.3設置/重置干擾分析………………………………...36
4.4 小結……………………………………………………….37
第五章 總結………………………………………………………….53
參考文獻……………………………………………………………...54

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