現今半導體工業蓬勃發展，電晶體隨著世代的微縮演進，使功率消耗的問題日益嚴重，金氧半場效電晶體因次臨界擺幅物理限制，不適於未來的低功率操作。穿隧電晶體因藉能帶間穿隧機制進行開關操作，成為綠能元件重要發展方向。本論文探討金屬源極穿隧場效電晶體其穿隧行為物理機制與相關元件設計。採用金屬取代原本半導體作為電晶體的源極，此一元件架構能同時結合能帶間穿隧和蕭特基能障穿隧兩種傳導機制，使穿隧電晶體突破元件導通電流不足的困境。其次，此研究引入源極與通道間的穿隧介電層，此一作法有助於能帶間穿隧效應在小閘極電壓時彰顯，強化穿隧電晶體的低次臨界擺幅特性。此一研究採用二維模擬軟體進行，在模擬分析中，以非局域性模型探討元件穿隧行為。研究結果顯示，具穿隧介電層之金屬源極穿隧電晶體其導通電流可有顯著提升，並維持極低的次臨界擺幅。

Tunnel field-effect transistor (TFET) is considered as an attractive candidate for future low-power applications because of its steep subthreshold slope. However, conventional TFET transistor suffers from a low on-state current. This thesis proposes a new metal source TFET to increase the on-state current by combining the band-to-band tunneling and Schottky barrier tunneling. Two-dimensional simulations with nonlocal models were performed to examine the physical mechanism and associated design. The results show that an additional tunneling dielectric between the source and the channel can be utilized along with the metal source to ensure a high on-state current while retaining an abrupt on-off switching of TFET devices.

中文摘要 i
Abstract ii
誌謝 iii
目錄 iv
圖目錄 vii
表目錄 x
第一章 緒論 1
1.1研究背景 1
1.2電晶體微縮與瓶頸 1
1.3小次臨界擺幅元件 3
1.4動機與目標 5
1.5論文架構 6
第二章 穿隧電晶體原理與模型 15
2.1元件結構與原理 15
2.2能帶間穿隧模型 17
2.3模擬參數 21
第三章 金屬源極穿隧電晶體 33
3.1金屬半導體接面 33
3.2金屬源極穿隧電晶體 34
3.3元件設計與模擬 37
第四章 具穿隧介電層之金屬源極穿隧電晶體 54
4.1元件結構與原理 54
4.2元件設計與參數 55
4.3不同結構之穿隧電晶體的比較 58
4.4 小尺度之穿隧電晶體 59
第五章 結論 81
參考文獻 82

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