近年隨著CMOS影像感測器技術發展，光偵測器的效能與製作日益受到重視，而為降低製作成本且便於與電路整合，在標準製程限制條件下設計高響應度及高速的光偵測器成為本論文所追求的目標。
本論文所討論的光偵測器以利用TSMC 0.18μm SiGe BiCMOS製程所實現的異質接面雙載子光電晶體(Heterojunction phototransistor，HPT)為主，由操作方式不同可分為兩部分，第一部分為HPT with body-strapping，利用所提出新的理論Body-strapping，將光電晶體的Base端與Body端相接，使光子於Substrate裡產生的載子導入Base中，進一步大幅提升SiGe HPT的響應度，且藉由模擬軟體發現載子確實由Body導入Base中，證實Body-strapping的理論。最後由量測發現HPT with body-strapping雖有良好的響應度但響應速度較慢，60μmx60μm大小的元件其Rise time為6μs，Fall time為8μs，本論文為此進一步提出改良的方法。
第二部分為單光子崩潰電晶體(Single Photon Avalanche Transistor, SPAT)，將HPT操作在Geiger模式，利用光電晶體擁有較低的崩潰電壓特性，達到極低操作電壓的單光子崩潰光偵測器，但實際量測發現HPT擁有遲滯現象使其崩潰電流被鎖住而無法利用，但藉由HPT的Base與一MOSFET相連而打破遲滯現象，可達到單光子崩潰光偵測器的特性。

Along with the improvement of CMOS image sensor technology, response and process of photodetector has drawn more attention gradually. This thesis attempts to design high-responsivity and high-speed photodetectors under the standard process restrictions.
This thesis is based on the photodetector, namely heterojunction phototransistor (HPT), fabricated in TSMC 0.18μm SiGe BiCMOS technology. This thesis can be divided into two parts with different operation modes. One is the design of the HPT with the theory of body-strapping. By connecting the base terminal to body terminal in HPT, the photo-generated carriers in the substrate are used to diffuse to the base and to enhance the response of the phototransistor. The theory is verified by confirming the flow direction of the photo-generated carriers with device simulation. Measurement also shows that the HPT with body-strapping has high responsivity but poor speed. Rise time and fall time of the HPT with body-strapping is 6μs and 8μs, repectively, for a 60 m x 60 m device. Therefore, we propose some improvement for the speed performance.
The other part of the thesis is the design of Single Photon Avalanche Transistor (SPAT). Whenever a transistor operates under the Geiger mode, we consider it as SPAT. Since a phototransistor has low open-base breakdown voltage (BVceo), SPAT may work at extremely low operating voltage. Measurement shows that directly making our HPT as a SPAT is not feasible because the breakdown current has been latched due the effect of breakdown hysteresis occurred in the HPT. However, connecting the base terminal of the SPAT with a MOSFET can break the limit made by hysteresis effect and can make the SPAT functional.

摘要 I
Abstract II
目錄 III
圖目錄 IV
表目錄 IX
第一章 前言 1
1.1 研究背景與發展 1
1.2 研究動機 3
1.3 論文章節架構 4
第二章 光偵測器原理及特性介紹 5
2.2 光電晶體基本原理 6
2.3 簡介SiGe材料的優點 7
2.4 光偵測器特性 8
2.5 Body-strapping原理 11
2.6 單光子崩潰二極體偵測器基本原理 12
2.6.1 Geiger mode 操作 12
2.6.2 Passive quenching-circuit 13
2.6.3 暗計數(Dark count rate) 14
第三章 光偵測器模擬及介紹 16
3.1 模擬結構及原理 16
3.1.1 HPT with Body-strapping 16
3.1.2 Half-base of HPT with body-strapping 19
3.1.3 橫向電晶體( Lateral Photo Transistor , LPT ) 20
3.1.4 單光子崩潰電晶體 21
3.2 模擬結果 23
3.2.1 HPT with Body-strapping 23
3.2.1 Half-base of HPT with body-strapping 38
3.3 元件佈局 41
3.3.1 HPT with Body-strapping 41
3.3.2 LPT 42
3.3.3 SPAT 43
第四章 量測與分析 44
4.1 量測儀器介紹 44
4.2 量測環境 45
4.2.1 電流對電壓量測 45
4.2.2 光電流對照度量測 45
4.2.3 響應速度量測 46
4.2.4 計數量測 46
4.3 量測結果 48
4.3.1 HPT with body-strapping 48
4.3.2 LPT 54
4.3.2 SPAT 55
4.4 量測結果討論與改善 70
4.4.1 HPT with body-strapping 70
4.4.2 SPAT 76
4.4.3 LPT 82
第五章 結論 84
參考文獻 85

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