傳統的黃光微影製程一直以來都是半導體產業重要的一環，利用曝光將光罩上複雜的奈米級電路圖形轉印至晶圓上的光敏感層，再經過顯影、蝕刻及切割等後續製程後，可將晶圓加工成一片片所有3C產品皆需要的晶片；然而，若是希望得到單純的奈米級週期性圖案，雷射干涉微影(Laser Interference Lithography，LIL)會是更好的選擇。
LIL係將兩道或多道同調雷射光互相干涉，再利用光敏感層記錄干涉條紋，並顯影後形成週期性的奈米條紋結構，其優點為不需要複雜昂貴的光罩及光學設備、可一次性大面積曝光……等等，在需要週期性奈米結構的領域如發光二極體(LED)、一維光柵、光子晶體等，因為其低成本、高產能的優點，具有相當宏觀的發展潛能。
本實驗室已開發了利用Lloyd’s Mirror分光的兩吋LIL自動曝光系統，主要應用於定義LED所需之圖案化藍寶石基板表面的週期圖形，然而，系統因採用光學干涉原理的關係，對雷射波長改變非常敏感，尤其於大面積曝光時，雷射波長的些微變化即可能造成曝光結果產生缺陷，進而影響到後續的製程和應用，且此系統只能使用單波長的雷射源，而單波長雷射其功率較低，因此造成曝光效率受到限制。
因此，本研究將利用消色差(Achromatic)原理，以雷射擴束光透過光柵所產生之繞射光進行干涉微影，使其產生與雷射波長無關的大面積干涉條紋，並對實驗室現有的Lloyd’s Mirror分光系統進行曝光穩定性之比較，預期解決穩定性及雷射選擇受限等問題，提高產品良率及曝光效率。

Conventional photolithography process has always been an important part of the semiconductor industry. The fabrication of an integrated circuit (IC) requires varietal processes performed on a semiconductor substrate. Fundamental to all of these processes is lithography, i.e., the formation of three-dimensional relief images on the substrate for subsequent transfer of the pattern to the substrate. However, if want to get a periodic pattern, laser interference lithography (LIL) would be a better choice.
LIL is a method to produce periodic structures using two interfering highly-coherent laser beams. Typically, light from a source is divided and recombined, forming a periodic intensity pattern that can be recorded by the exposure of a photosensitive substrate. The benefit of using LIL is the quick generation of dense features over a large area without loss of focus and do not require expensive mask. Because of low cost consuming and high production capacity, laser interference lithography has bright future in the field of period structure application such as light-emitting diode (LED), grating, photonic crystals, and etc.
However, because of the principle of LIL, exposure result is very sensitivity to the wavelength of the illumination when laser is not perfectly coherent. Especially for large area exposure, small change of wavelength may cause defect on exposure result, and has adverse effect on following process or application. Therefore, this research will design and build up an advanced achromatic interference lithography system capable of utilizing partially coherent illumination to solve the stability problem.

目錄
第一章 緒論
1.1 前言
1.2 文獻回顧
1.2.1 微影(Lithography)
1.2.2 雷射干涉微影
1.3 研究動機
1.4 論文架構
第二章 研究原理介紹
2.1 基本光學
2.1.1 干涉原理
2.1.2 繞射原理
2.2雷射縱向模態(Longitudinal mode)
2.3 光學系統設計
2.4 模擬與分析
2.4.1 Lloyd’s mirror干涉微影模擬
2.4.2 消色差干涉微影模擬
第三章實驗設備與程序
3.1 實驗流程
3.2 實驗材料與設備介紹
3.3 基板前處理
3.4 實驗內容
3.4.1 雷射模態量測
3.4.2 消色差大面積曝光之可行性驗證
3.4.3消色差效果驗證
第四章實驗結果與討論
4.1雷射模態量測結果
4.2消色差大面積曝光之可行性驗證結果
4.3消色差效果驗證結果
第五章 結論與未來展望
文獻參考

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