開發出快速並且準確地可攜帶式診斷疾病工具是非常重要的，因為感染性疾病易造成全球性的威脅。目前全球愛滋病（人類免疫缺陷病毒第一型）的病情一直是世界性的問題。典型的檢測、診斷HIV的方法是利用酶聯免疫吸附試驗（ELISA）和PCR。然而，酶聯免疫吸附試驗(ELISA)和PCR的檢驗需要高成本的設備和特定的試劑，如特殊的緩衝液和酶。並且，整個檢測過程是非常費時的。這些方法不適合於在資源有限的國家，如非洲。然而，目前高電子遷移率電晶體（HEMT元件）已經被許多研究提出可被廣泛地應用於生醫檢測方面。特別是，高靈敏度的高電子遷移率電晶體可以快速地測量目標物，此特性適合開發新的方法來準確快速地檢測愛滋病患者。在這項研究中，能夠與HIV-1逆轉錄酶蛋白質產生專一性接合的適體將修飾在AlGaN / GaN的HEMT元件上。我們成功地於生理鹽環境下操作AlGaN / GaN的HEMT元件並克服離子屏蔽效應，並測量出極低濃度的HIV-1 RT蛋白質（1 fM）。

The development of rapid, accurate, and portable diagnostic tools is very important because infectious diseases are the big threat to the global health. The acquired immunodeficiency syndrome (AIDS) triggered by human immunodeficiency virus type 1 (HIV-1) has been a public-health problem in the world. Typical detection for diagnosing HIV is the enzyme-linked immunosorbent assay (ELISA)[1, 2] and nucleic acid amplification by PCR[3, 4]. However, ELISAs and PCRs require high cost equipment and specific reagents, such as special buffers and enzymes. Also, the whole detection procedure is time-consuming. These methods are not suitable for diagnosing in resource-limited countries, such as Africa. In contrast, the high electron mobility transistors (HEMTs) have been applied widely to detecabstrectt biological samples in the real-time detection [5-9]. In particular, the high sensitivity and rapid measurements of the high electron mobility transistors are suitable for developing the new way to detect the patients with AIDS. In this study, the HIV-1 RT-specific aptamer was immobilized on AlGaN/GaN HEMTs. We successfully operate AlGaN/GaN HEMTs in physiological salt concentration to overcome the ionic screening effect and detect low concentration of HIV-1 RT protein (1 fM).

Table of Contents
Page
Chapter 1 Introduction…………………………………………………………………7
1.1 Motivation………………………………………………………………7
Chapter 2 Literature Review……………………………………………9
2.1 Acquired Immunodeficiency Syndrome (AIDS) …………………9
2.2 HIV-1 and Reverse Transcriptase (RT)………………11
2.3 Biosensors…………………………………………………………14
2.4 Biosensors Based on AlGaN/GaN High Electron Mobility Transistors……17
2.5 HIV-1 RT-specific Aptamer and Systematic Evolution of Ligands by Exponential Enrichment (SELEX)……………………20
2.6 Detecting Environments………………………………24
Chapter 3 Experimental Method……………………………………27
3.1 Starting material……………………………………………………28
3.2 Sensor fabrication……………………………………28
3.3 HIV-1 RT-specific aptamer immobilization……………………29
3.4 Detection of HIV-1 RT protein………………………………30
3.5 Signal measurement setup………………………………………32
Chapter 4 Result and Discussion……………………………………33
4.1 Current from 0 to 50 us with Different Conditions…………33
4.2 Signal amplification by counting total charges……………36
4.3 Optimization of the Elution Time for BSA and HIV-1 RT Proteins…………40
Chapter 5 Summary…………………………………………………………42
Reference…………………………………………………………………44

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