本研究藉由表面修飾來改變二硫化鉬的光學和電學特性，利用羅丹明B(Rhodamin B, RhB)和二甲基甲醯胺(DMF)修飾二硫化鉬有效地達到與二硫化鉬的電荷轉移，並探討RhB和DMF的電荷轉移機制。利用拉曼光譜(Raman)和光致螢光光譜(Photoluminescence)檢視RhB和DMF修飾對二硫化鉬造成P型摻雜或和型摻雜的效果；利用原子力顯微鏡(Atomic Force Microscopy, AFM)量測觀察分子分布的均勻性和厚度，最後將二硫化鉬製成之元件做電性量測分析。根據RhB和DMF的分子結構和官能基提出電荷轉移的機制，此研究結果顯示RhB造成二硫化鉬P型摻雜，DMF則是造成二硫化鉬N型摻雜，並且提供電性量測直接證明化學修飾後有P型和N型摻雜的趨勢，本研究利用RhB和DMF修飾的方法對於改變二硫化鉬之電子元件特性的改變相當有潛力。

Our research dedicate to chemical functionalization and effect of Raman and PL that molecular induce, we conclude mechanism of rhodamine B and dimethylformamide, by chemical functionalization, electrons can transfer to molybdenum disulfide and change its optical and electric properties. We confirm that molecular cause molybdenum disulfide what effect is induced by Raman and Photoluminescence, observe distribution and uniformity of molecular by AFM. Finally, we measure device that are made of molybdenum disulfide and show that molecular functionalization change electrical properties of molybdenum disulfide indeed. According to results of Raman and PL, we can discern what effect molecular cause and conclude mechanism of molecular. Our research shows rhodamine B that has benzene and electron-withdrawing can cause molybdenum disulfide p-doping, however, dimethylformamide contains electron-donating and causes molybdenum disulfide n-doping. Our research offers results of chemical functionalization that we can refer to change electrical properties of molybdenum disulfide in future.

摘要………………………………………………………………………2
致謝………………………………………………………………………4
圖目錄…………………………………………………………..………..8
表目錄…………………………………………………………………..10
第一章 緒論……………………………………………………………11
第二章 文獻回顧………………………………………………………13
2.1 二維材料的研究及發展…………………………………………...13
2.1.1 二維材料的結構和特性………………………………….…13
2.1.2 過渡金屬硫族化合物的結構和物理性質…………….……14
2.2 過渡金屬硫族化合物的合成……………………………...………15
2.2.1 由上而下法………………………………………………….15
2.2.2 由下而上法……………………………………………...…..16
2.3 過渡金屬硫族化合物的應用……………………………...………17
2.3.1 電子結構……………………………………………...……..17
2.3.2 電子傳輸和元件………………………………….…………18
2.3.3 光學及振動性質…………………………………….………20
2.4 二維材料的表面化學修飾………………………………….……..20
2.4.1 化學修飾方法……………………………………………….21
2.4.2 分子的修飾機制…………………………………………….26
2.4.3 分子修飾的結果(電性、光學) …………………………….28
第三章 實驗流程與儀器………………………………………………37
3.1 表面化學修飾……………………………………………..……….37
3.1.1 修飾方法…………………………………………………….37
3.1.2 使用的化學分子………………………………….…………37
3.1.3 場效電晶體元件製作………………………………….....…38
3.2 測量儀器…………………………………………………………...38
3.2.1 拉曼光譜……………………………………………….……38
3.2.2 光致螢光光譜……………………………………….………38
3.2.3 原子力顯微鏡……………………………………...………..39
3.2.4 元件電性量測……………………………………...………..39
第四章 結果與討論…………………………………………………....42
4.1 P型摻雜物………………………………………………………….43
4.1.1羅丹明B…………………………………………………..….43
4.2 N型摻雜物……………………………………………………….…44
4.2.1 二甲基甲醯胺…………………………………………...…...44
4.3 分子的修飾機制…………………………....………………..……..46
第五章 結論與未來展望…………………………………………….....55
參考文獻………………………………………………………………..56

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