二硒化鉬為TMD二維材料家族成員之一，其單層結構達奈米尺度，具有獨特的光、電性質。本研究成功利用常壓化學氣相沉積法合成二硒化鉬在二氧化矽/矽與三氧化二鋁基板上，並利用拉曼光譜及光致發光光譜鑑定生長之二硒化鉬品質；在光致發光光譜檢測中顯示，單層的二硒化鉬與數層的比較之下，，具有較高的發光強度且顯示能隙約1.56 eV 。根據調控不同生長參數的實驗結果，討論可能影響製程的因素，提供合成二硒化鉬的原則。此外，本研究將單層二硒化鉬製作成下閘極式場效電晶體，其中二硒化鉬在常溫下的載子遷移率可達0.9 cm2 V−1 s−1；將此元件作光偵測測試，二硒化鉬擁有良好的光響應，約為43.21 mA/W(使用功率為2.47×〖10〗^(-4) W的633 nm紅光雷射，在閘極電壓為-5 V時進行量測)，從此研究結果顯示出二硒化鉬在光偵測器的應用上，是具有潛力的材料之一。

Single-layer molybdenum diselenide(MoSe2), a two-dimension material which possesses unique optical, electrical property of transition dichalcogenides in their layered form, and a dimension with nano-scale level. In this work, high crystalline MoSe2 monolayered atomic layers on SiO2/Si and sapphire substrates have been successfully synthesized by the chemical vapor deposition (CVD) method at atmospheric pressure. Raman spectroscopy reveals that the as-grown ultrathin MoSe2 layers change from single layer to few layers. Photoluminescence (PL) spectroscopy demonstrates that while the multi-layers MoSe2 show weak emission peak, the monolayer has a much stronger emission peak at ~1.56 eV. Our results provide some general guidelines for MoSe2 monolayer synthesis. In addition, we report on the fabrication and optoelectronic properties of phototransistors based on monolayered MoSe2 back-gated field-effect transistors, with a mobility of 0.9 cm2 V−1 s−1 at room temperature. The devices exhibit a good photoresponsivity of 43.21 mA/W (using a 633 nm laser at a laser power of 2.47×〖10〗^(-4) W and a gate bias of -5 V)suggesting that MoSe2 monolayer is a promising material for photodetection applications.

摘要 I
目錄 IV
圖目錄 VI
表目錄 X
第一章 研究動機 1
第二章 文獻回顧 3
2.1 TMD材料之發展及特性 3
2.1.1 TMD之組成與電子結構 3
2.1.2 TMD場效電晶體(FET)特性 4
2.2 原子層材料之合成 6
2.2.1 機械剝離法 6
2.2.2 化學氣相沉積法(CVD) 6
2.3 材料檢測方式 7
2.3.1 光學顯微鏡(Optical microscope, OM) 7
2.3.2 掃描式原子探測顯微鏡(Atomic force microscope, AFM) 7
2.3.3 拉曼光譜分析(Raman) 8
2.3.4 光致螢光光譜分析(Photoluminescence, PL) 8
2.4化學氣相沉積法合成二硒化鉬原子層 9
2.5 光偵測(Photodetection)之量測及應用 9
第三章 實驗步驟及研究方法 23
3.1 實驗步驟 23
3.1.1 試片處理 23
3.1.2 化學氣相沉積製程 24
3.1.3 元件製作 24
3.2 材料分析與量測 25
3.2.1 光學顯微鏡 25
3.2.2 拉曼光譜分析 25
3.2.3 光致螢光光譜分析 26
3.2.4 電性量測 26
3.2.5 光偵測性質量測 27
第四章 化學氣相沉積法合成二硒化鉬 31
4.1製程參數對於二硒化鉬成長之影響 31
4.1.1 製程最佳化 31
4.1.2 晶種濃度對二維材料生長的影響 32
4.1.3 反應氣體比例/流速與硒蒸氣進入系統時間的影響 33
4.1.4基板種類對於生長的影響 37
4.1.5 總結 38
第五章 單層二硒化鉬之光電特性及光偵測 49
5.1 二硒化鉬場效電晶體之電性量測 49
5.2二硒化鉬場效電晶體之光感測分析 49
第六章 結論與未來展望 60
參考文獻 62

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