石墨烯為一單層碳原子材料，具有特殊的光學與電學性質、優良的化學穩定性及高載子遷移率，這些獨特的性質，使石墨烯具備取代矽材料作為電子元件的潛力。本研究以化學氣相沉積系統於電解拋光銅箔上成長大面積的單層石墨烯，利用轉印技術，與原子層沉積所製備之氧化鋅薄膜形成石墨烯/氧化鋅接面場效電晶體。研究中使用拉曼光譜儀、光學顯微鏡探討化學氣相沉積法所成長的石墨烯及轉印至基板後的石墨烯之品質，並以紫外光-可見光光譜儀分析石墨烯的吸光率，及原子力顯微鏡量測單層石墨烯的厚度。另一方面，利用X光繞射儀、光激螢光光譜儀分析氧化鋅薄膜之基本物性，並探討不同原子層沉積溫度對氧化鋅薄膜的影響。在場效電晶體量測上，以多探針量測系統量測元件之電學性質，並探討不同成長溫度之氧化鋅對PN接面的影響。研究結果顯示，於電解拋光銅箔上成長之單層石墨烯，其厚度、吸光率與電洞(電子)遷移率分別為0.4-0.7 nm、3.35%、4638(5470) cm2/V∙s，而電洞及電子開關比分別為2.91與2.12。經由與氧化鋅薄膜複合型成PN接面後，最後所獲得之石墨烯/氧化鋅接面場效電晶體，其載子遷移率最高可達670 cm2/V∙s，開關比為2.87 × 105。

Graphene possesses excellent chemical stability, high carrier mobility, and unique optoelectrical properties at atomic level, which was considered as a promising material to replace Si in semiconductor industry. In this study, the chemical vapor deposition method was adopted to grow monolayer graphene on the electropolished Cu foil, followed by transferring the as-synthesized graphene to zinc oxide film, which was prepared by atomic layer deposition, forming graphene/zinc oxide junction field effect transistor. Graphene growth and transferring were characterized using Raman spectrum, optical microscopy; thickness and absorbance were measured using atomic force microscopy and UV-visable spectrometer, respectively. In other side, zinc oxide deposited at different temperature were also characterized using X-ray diffractometer and photoluminescence spectroscopy, investigating the effect of different growth temperature on zinc oxide. Electrical properties of the fabricated FETs were examined by a multi-probe system and the influences of irradiation of UV on electrical properties were also analyzed. The results indicate that the thickness, absorbance, and hole(electron) mobility of the graphene were 0.4-0.7 nm, 3.35%, and 4638(5470) cm2/V∙s, respectively. The current on-off ratio of hole and electron was 2.91 and 2.12, respectively. Graphene/zinc oxide junction field effect transistor was formed combining with graphene and zinc oxide film, showed high electron mobility of 670 cm2/V∙s and high current on-off ratio of 2.87 × 105.

目錄
摘要 I
Abstract II
致謝 III
目錄 IV
表目錄 VII
圖目錄 VIII
第一章 緒論 1
1-1前言 1
1-2研究動機 1
第二章 文獻回顧 3
2-1石墨烯簡介 3
2-1-1石墨烯的晶體結構 3
2-1-2石墨烯的能帶結構 4
2-2石墨烯的製備方法 5
2-2-1機械剝離法 5
2-2-2碳化矽裂解法 6
2-2-3化學還原法 6
2-2-4化學氣相沉積法 7
2-3鑑定石墨烯層數之方法 10
2-3-1穿透式電子顯微鏡 10
2-3-2原子力顯微鏡 10
2-3-3光學顯微鏡 11
2-3-4拉曼光譜儀 11
2-4氧化鋅簡介 13
2-4-1氧化鋅的製備 14
2-4-2原子層沉積成長氧化鋅原理 14
2-5 PN接面 15
2-5-1整流特性 16
2-5-2光伏特性 17
2-5-3接面電晶體 17
第三章 實驗步驟與研究方法 35
3-1實驗步驟 35
3-1-1銅箔前處理 35
3-1-2石墨烯的製備 35
3-1-3轉印製程 36
3-1-4石墨烯電晶體元件的製備 37
3-1-5氧化鋅薄膜的製備 37
3-1-6氧化鋅/石墨烯接面之製備 38
3-1-7石墨烯/氧化鋅接面場效電晶體元件製備 38
3-1-8紫外光照射實驗 38
3-2 試片分析 39
3-2-1拉曼光譜儀 (Horiba Jobin Yvon HR 800 UV) 39
3-2-2光激螢光光譜儀 (Horiba Jobin Yvon HR 800 UV) 39
3-2-3原子力顯微鏡 (Bruker Dimension ICON) 39
3-2-4紫外光-可見光光譜儀 (Hitachi U3010) 39
3-2-5 X射線繞射儀 (SHIMADZU 6000) 40
3-2-6場發射掃描式電子顯微鏡 (Hitachi SU-8010) 40
3-2-7電流-電壓量測分析(Keithley 4200-SCS) 40
第四章 結果與討論 49
4-1於銅箔上成長單層石墨烯及其性質分析 49
4-1-1銅箔前處理 49
4-1-2單層石墨烯之性質分析 50
4-2氧化鋅薄膜之性質分析 52
4-3石墨烯/氧化鋅接面之電性分析 54
4-4場效電晶體之電性量測及分析 56
4-4-1石墨烯場效電晶體之電性 56
4-4-2石墨烯/氧化鋅接面場效電晶體元件之電性 57
第五章 結論 77
參考文獻 79

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