此篇論文提出一個新的方法設計並實現多層抗反射鍍膜。多層抗反射膜各層的折射率是利用二項式響應的多級阻抗匹配決定，且利用參雜不同體積比例的高阻值矽之奈米粉末(用來合成相對高折射率的抗反射層)或空氣氣泡(用來合成相對低折射率的抗反射層)至高密度聚乙烯中來得到所需要的折射率。根據上述的方法，能針對兆赫波頻段設計出應用於矽基板的多層抗反射鍍膜。可操作的頻段範圍是介於0.250 THz到0.919 THz之間(頻寬為114.46%)，在此範圍內穿透值可高於95%以上。此結果適用於TE及TM偏振方向且入射角度範圍可適用於0°到50°。

A new approach to design and realize a broadband multilayer anti-reflection (AR) coating is proposed in this study. The binominal multi-section transformer is employed to efficiently determine the thickness and the refractive index of each matching layer, while those layers can be further realized by doping different fraction of silicon nano powders (for relatively-high-index layers) or air pores (for relatively-low-index layers) into the low-loss HDPE polymer. Based on this scheme, we design a ten-layer AR coating for widely used silicon wafer. The designed AR coatings are double-side integrated with a 375-μm-thick silicon wafer, which is able to enhance the overall THz transmission to higher than 95.00% from 0.250 THz to 0.919 THz (114.46% bandwidth) for either TE-polarized or TM-polarized THz beam incident from arbitrary angle below 50º.

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VI
表目錄 VIII
第1章 緒論 1
1.1 抗反射鍍膜-簡介 1
1.2 抗反射鍍膜在可見光及紅外光之應用 2
1.3 抗反射鍍膜在兆赫波之簡介 3
1.31 兆赫波的簡介 4
1.32 兆赫波的應用研究 4
1.33 抗反射鍍膜在兆赫波之文獻回顧 6
1.4 研究動機 9
第2章 理論基礎 10
2.1 兩介質界面之穿透反射 10
2.2 多層介質界面之穿透與反射 12
2.21 傳遞矩陣法介紹(transfer matrix method) 12
2.22 傳遞矩陣法在多層介質上之運用 12
2.3 斜向入射至多層介質 15
2.31 橫向電場(Transverse Electromagnetic Wave) 15
2.32 橫向磁波(Transverse Magnetic Wave) 17
2.4 單層抗反射鍍膜理論推導 19
2.41 厚度之選擇 19
2.42 折射率之選擇 20
2.5 多層抗反射鍍膜理論推導 22
2.51 二項式響應(Binomial Multi-Section Transformer) 23
2.52 柴比雪夫響應(Chebyshev Multi-Section Transformer) 24
2.53 比較兩個不同阻抗匹配的結果 26
2.6 等效介質理論 27
2.61 不同物裡模型之介紹 27
2.62 理論與實驗之比較 29
第3章 多層雙邊抗反射鍍膜設計與模擬 32
3.1 設計各層折射率及厚度 33
3.2 設計之實現 35
3.21 材料之選擇 37
3.22 各層抗反射膜參雜之比例 39
3.3 設計結果與討論 40
3.31 正向入射之穿透與反射 40
3.32 時域之相關討論 43
3.33 斜向入射的穿透與反射 45
第4章 結論 58
參考資料 59

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