本論文的研究分文三部分，「改善氧化鋁起泡現象」、「局部背接觸電極之多晶矽太陽能電池製作」、「氧化矽/氧化鋁薄膜分析」。
ALD沉積氧化鋁薄膜經過溫度處理後，例如PECVD沉積氧化矽，會有起泡（Blistering）現象產生。本研究首要目的是改善起泡現象，在室溫下將矽晶片浸泡在濃硝酸溶液(69-wt%)生長氧化矽層，使晶片表面產生親水性，再用ALD沉積氧化鋁在具有親水性表面的矽基板上並進行退火處理，隨後用PECVD沉積氮化矽，再經由光學顯微鏡觀察，結果發現起泡面積由12.5%改善至0.7%及0%。
局部背接觸電極之多晶矽太陽能電池是以氧化矽/氧化鋁薄膜作為背面鈍化層，使用雷射在背面作局部線狀開孔，以網印方式印刷金屬電極，再經由產線上的燒結爐燒結形成局部背表面場，元件平均轉換效率17.39%，比較參考片下降0.05%，但是平均短路電流提升0.04安培，波長750nm～1100nm的外部量子效率有明顯提升。
XPS量測的鋁原子2p軌域訊號顯示退火後鈍化層內的鋁原子空缺數量上升，表示鋁原子空缺造成負電荷密度上升，提升場效鈍化效果。

第1章 序論 1
1.1 研究動機 1
1.2文獻回顧 2
1.3 論文架構 5
第2章 基本原理 6
2.1基本的半導體物理 [31] 6
2.1.1材料分類與晶體結構種類 6
2.1.2半導體的能帶結構 6
2.1.3本質半導體與外質半導體 8
2.1.4費米能階的位置 10
2.1.5 p-n接面 12
2.2矽晶太陽能電池基本原理 14
2.2.1太陽能電池發電原理 14
2.2.2載子復合機制 15
2.2.3太陽能電池的電流‐電壓特性 16
2.2.4太陽能電池的參數介紹 17
2.3量子效率 20
2.3.1外部量子效率 20
2.3.2內部量子效率 21
2.4 原子層化學氣相沉積與氧化鋁的場效鈍化原理 21
2.5濕式化學生長氧化矽機制 [33] 23
2.6微波光電導衰減法原理 25
2.7光束誘導電流量測原理 26
2.8電致發光量測原理 26
2.9 X光繞射原理 26
2.10 X光光電子能譜儀 27
第3章 實驗設計 28
3.1實驗概述 28
3.2 實驗目的 28
3.3元件製作流程 29
3.3.1前置處理 29
3.3.2局部背面接觸電極之多晶矽太陽能電池製作 30
3.3.3全背部鋁電極矽晶太陽能電池製作 32
3.4燒結爐熱穩定度測試實驗 34
第4章 實驗結果與討論 36
4.1少數載子生命週期量測 36
4.1.1起泡現象產生 36
4.1.2單晶矽晶片輔助量測實驗 39
4.1.3多晶矽晶片熱穩定度測試 44
4.2元件轉換效率量測 50
4.3外部量子效率量測 54
4.4光束誘導電流量測 56
4.5掃描式電子顯微鏡下觀察 59
4.6電致發光量測 62
4.7 XRD量測 64
4.8 XPS量測 67
第5章 結論 70
參考文獻 73

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