本實驗利用浸泡硝酸氧化法在多晶矽晶片上成長氧化矽後，並搭配有氧氣環境下的高溫退火(熱氧化)再成長出超薄熱氧化矽用以表面鈍化，並討論不同溫度下退火的少數載子壽命，來尋找最佳的退火參數，而我們也比較了有無浸泡硝酸的矽晶片在高溫退火後，在大氣環境下隨時間的衰減程度，並使用電致發光(EL)量測，來得知預先硝酸氧化處理的優點，而藉由此方法我們有效提高了業界產線片的轉換效率。

第一章 序論 1
1.1研究背景 1
1.2 太陽能歷史 1
1.3太陽能電池的發展近況 2
1.4 研究構想與目的 5
1.5 論文架構 5
第二章 基本原理 6
2.1 半導體的基礎 6
2.1.1半導體材料 6
2.1.2 晶體結構 6
2.1.3半導體的光吸收與載子復合 8
2.1.4半導體摻雜 11
2.1.5 P-N接面 12
2.2 太陽能電池 13
2.2.1 太陽光譜 13
2.2.2太陽能電池的基本結構 15
2.2.3 太陽能電池的等效電路 16
2.2.4 太陽能電池的參數 18
2.2.5 效率的損失來源 21
2.2.6 效率損失的改善方法 22
2.3二氧化矽(Silicon Dioxide) 的成長 25
2.3.1 熱氧化（Thermal oxidation） 25
2.3.2硝酸氧化（Nitric Acid Oxidation，NAOS） 26
第三章 研究方法與製程步驟 29
第四章 實驗結果與討論 33
4.1少數載子壽命(Lifetime)量測 33
4.1.1 μ-PCD量測原理 33
4.1.2量測數據分析 34
4.2二氧化矽厚度量測 48
4.3電池元件完成後的量測 51
4.3.1電致發光(Electroluminescence，EL)量測 51
4.3.2 SEM量測BSF的厚度 54
4.3.3反射率量測 56
4.3.4 I-V量測 58
第五章 結論 65
參考文獻 67

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