在半導體製程發展的過程中，線寬微縮為主要的趨勢，由1970年的 10 μm逐年下降至近幾年的14 nm、10 nm、7 nm，甚至是5 nm。線寬微縮會使銅內連線中的電子受到銅表面嚴重散射，銅內連線的電阻率隨著線寬微縮逐步上升，電阻-電容延遲也隨之明顯。線寬微縮後，銅內連線上的電流密度也會隨著變大，容易產生電致遷移使銅內連線損壞。本論文係利用電子迴旋共振化學氣相沉積法成長石墨烯於內連線上，石墨烯幫助導電可降低銅內連線電阻，石墨烯也作為覆蓋層，提升銅線可承受的最大電流密度。利用電漿輔助可以降低成長溫度至400°C，有效減少熱預算。本論文一開始先以厚度25 μm銅箔與50 nm銅膜進行測試，並以本實驗室製作的平面式線寬200 nm 銅內連線進行初步測試。再透過一系列實驗設計，找出適合細線寬內連線的實驗參數，將石墨烯沉積於100 nm以下的溝渠式內連線。發現石墨烯可以成功降低電阻率，並提升最大電流密度。此法有機會與目前的後段製程整合，提升內連線穩定度，解決線寬微縮需克服的困難。

During the development of semiconductor process, scaling down node size is the main way to reduce cost and enhance performance. Starting from 10 μm, the node size shrinks to 14 nm, 10 nm, 7 nm, even 5 nm now. Scaling down results in severe electron surface scattering within copper interconnects, thus the resistivity and the RC-delay grow higher. Besides, the current density within copper interconnects is also enhanced so that it is easier for electromigration of copper inside the interconnects which causes failure. In this thesis, the author would like to grow graphene on by ECR-CVD on short line width interconnects. Graphene can reduce the interconnect resistance by shunting with interconnects, and being the capping layer to enhance the breakdown current density interconnects can endure. By using plasma-assisted CVD, the growth temperature can be reduced to 400 °C and lower the thermal budget. The author also grew graphene by ECR-CVD on different thickness of copper, such as copper foil (25 μm in thickness), copper thin film (50 nm in thickness), planar interconnects (200 nm in width) made from our lab. In order to find better parameters for ECR-CVD for trench interconnect (less than 100 nm in width), the author applied design of experiments which can find optimized parameters for ECR-CVD. Finally, the author figure out that graphene can lower the resistivity and enhance the current density of copper interconnects. ECR-CVD has great potentialities integrating with modern backend technology, thus improves the stability of interconnect.

Abstract...I
論文摘要...III
致謝...V
目錄...VII

第一章 緒論...1
1.1石墨烯的發現與發展...1
1.2積體電路內連線的發展趨勢...3
1.3傳統銅內連線的製程與銅線特性...5
1.4電致遷移的學理分析...9
1.5論文架構...15

第二章 石墨烯的基礎學理與成長技術...17
2.1 石墨烯的結構與性質...17
2.2 石墨烯的拉曼光譜...20
2.3 成長石墨烯的相關技術...25

第三章 電子迴旋共振化學氣相沉積法...27
3.1 電漿簡介...27
3.2 電子迴旋共振化學氣相沉積法系統...29
3.3 成長石墨烯於銅基板...32
3.3.1 載台距離對石墨烯之影響...33
3.3.2 載台溫度對石墨烯之影響...35
3.3.3 微波功率對石墨烯之影響...37
3.3.4 氫氣流量對石墨烯之影響...37

第四章 平面式石墨烯改質內連線...39
4.1 內連線製作流程...39
4.2 內連線特性量測與分析...40

第五章 渠溝式標準製程石墨烯改質內連線...47
5.1 製程參數對銅內連線造成之影響...48
5.2 實驗計畫法...50

第六章 結論與展望...65

參考文獻...67

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