電阻式記憶體(RRAM)具有結構簡單，高密度，操作速度快，低消耗功率，穩定性高，資料保存能力好等優點，且其製程可與現金互補式金屬氧化物半導體(CMOS)製程技術相容，本論文探討以氮化鈦(TiN)/鈦(Ti)/氧化鉿(HfO2)/氮化鈦(TiN)結構為主的電阻式記憶體，在上電極與介電層中增加了一層鈦，做為氧離子收集層，以提升元件電阻阻態轉換特性。本文探討其操作面積，介電層厚度，熱退火溫度，熱退火時間，對於元件的特性影響。元件製備完後，此外在量測時經由限制電流與電壓的改變，使元件具備多種電阻阻態的轉換。經由熱退火改變氧空缺的分布，在電阻轉換部分更穩定，高低電阻阻態比更優良使元件電阻轉換特性更良好。
經由本文研究，氧化鉿基底電阻式記憶體經由四百度熱退火五分鐘，擁有良好的特性，其耐久度可達到1012次以上，操作電壓小於1V，高低阻態(ON/OFF ratio)比大於102，具備穩定性高，且資料保存能力好等優點，因此具有發展潛力。

The resistive RAM has advantages of simple structure, high density, fast switching speed, low power operation, and reliable retention. Furthermore, some RRAMs are friendly for CMOS integration. Thus, RRAM has a great potential as mainstream memories in the future.
In this thesis, TiN/Ti/HfO2/TiN RRAM structure was fabricated and studied. Thin Ti layer was inserted between top electrode and hafnium oxide, which can absorb oxygen atoms from dielectric layer. This Ti layer can greately enhance the performance of the RRAM by serving as an oxygen reservoir to fullfill the supply and demand of oxygen in HfO2 layer. The effects of four experiment structure and process parameters on the performance of RRAM were studied in this thesis: active region size、thickness of dielectric layer、annealing temperature、annealing time. The annealing temperature and time plays an ctitica role in this device fabrication.
The layer structure of Resistive RAM device studied in this thesis was TiN/Ti/HfO2/TiN, with Ti thickness of 10 nm and HfO2 thickness of 10 nm. By applying post metal annealing at 500⁰C for 4 minutes, RRAM with low operation voltage (<1V), reliable switching endurance (>10^6cycles), high ON/OFF ratio (>10^2) ,and good retention(>5×10^4s) can be achieved.

第一章 緒論
第二章 電阻轉換現象
第三章 實驗流程
第四章 氧化鉿元件之結果與討論
第五章 結論
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