本研究以實驗室研發之高效能新型異質接面光電晶體作為影像感測器的感光元件，設計與其相配合的像素架構，利用二次相關取樣電路消除暗訊號，整合周邊電路於同一晶片中。
整個影像感測器利用TSMC 0.18 um SiGe BiCMOS標準製程整合，相較於Si的同質接面，SiGe製程能夠降低pn接面的能隙且有較高的載子遷移率和吸收係數，故異質接面光電晶體有做為感光元件的優勢。
實際下線晶片為32x32陣列，影像規格要求能在Full HD (1920x1080)陣列下達30 frame/s的畫面更新率，量測結果顯示新型異質接面光電晶體最低能偵測至0.01 lux的光源，像素陣列輸出與低照度的對數值呈線性變化。

第一章 前言
第二章 CMOS影像感測器之特性
第三章 電路設計
第四章 模擬結果
第五章 量測與討論
第六章 結論

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