本論文描述了一個新式電荷泵，具有零逆回流電流、恆定開關導通電阻、以及頻率控制系統的設計。過去文獻中的電荷泵存在著一些問題，像是時脈轉換時有逆流電流，以及開關電阻在導通時隨時間增大，改良的電荷泵不僅解決以上問題，更增加了驅動能力和能量效率。
此外，若輸出端的負載變動時，過去的電荷泵會有輸出電壓跟著變動的問題，故其精確度和穩定性不佳，因此，本論文針對此應用問題，設計出一頻率回授控制電路，以穩定不同負載下的電壓輸出。

摘要 i
Abstract ii
致謝 iii
目錄 iv
圖目錄 vi
表目錄 x
第一章 緒論 1
1.1 前言 1
1.2 研究動機 1
1.3 論文概述 3
第二章 充電式電荷泵原理 4
2.1 簡介 4
2.2 電荷泵基本原理 4
2.3 Cockcroft Walton電荷泵 6
第三章 電荷泵前人技術 8
3.1 Dickson電荷泵 8
3.2 Charge Transfer Switches(CTS)電荷泵 11
3.3.1 Static CTS 11
3.3.2 Dynamic CTS 12
3.3 Latch 電荷泵 13
3.4 減少逆流電流式電荷泵 16
3.5 結論 19
第四章 新式電荷泵電路設計 20
4.1 簡介 20
4.2 操作原理 20
4.3 電荷泵模型分析 26
第五章 頻率控制系統電路設計 37
5.1 簡介 37
5.2 系統架構 38
5.3 系統操作原理與規格 38
5.4 子電路設計與模擬 40
5.4.1 新式電荷泵 40
5.4.2 數位時脈控制 41
5.4.3 壓控振盪器 45
5.4.4 差值放大器 50
5.4.5 回授電阻 53
5.4.6 帶差參考電路 54
第六章 系統模擬結果 56
6.1 輕載模擬結果(IL=1μA) 57
6.1.1 TT Corner 25℃ Pre-Simulation模擬結果 57
6.1.2 TT Corner 25℃ Post-Simulation模擬結果 58
6.1.3 SS Corner 0℃ Post-Simulation模擬結果 59
6.1.4 SS Corner 80℃ Post-Simulation模擬結果 60
6.1.5 FF Corner 0℃ Post-Simulation模擬結果 61
6.1.6 FF Corner 80℃ Post-Simulation模擬結果 62
6.1.7 供應電壓VDD=1.98V模擬結果 63
6.1.8 供應電壓VDD=1.62V模擬結果 64
6.2 重載模擬結果(IL=100μA) 65
6.2.1 TT Corner 25℃ Pre-Simulation模擬結果 65
6.2.2 TT Corner 25℃ Post-Simulation模擬結果 66
6.2.3 SS Corner 0℃ Post-Simulation模擬結果 67
6.2.4 SS Corner 80℃ Post-Simulation模擬結果 68
6.2.5 FF Corner 0℃ Post-Simulation模擬結果 69
6.2.6 FF Corner 80℃ Post-Simulation模擬結果 70
6.2.7 供應電壓VDD=1.98V模擬結果 71
6.2.8 供應電壓VDD=1.62V模擬結果 72
6.3 模擬結果總整理與分析 73
第七章 晶片佈局與量測結果 77
7.1 晶片佈局 77
7.2 量測設備與環境 79
7.3 量測結果 81
7.4 量測問題討論 85
第八章 結論與後續建議 89
8.1 結論 89
8.2 後續研究改進建議 89
參考文獻 91

[1]Cockcroft, J.D. and E.T. Walton, “Production of high velocity positive ions,” Proceedings of the Royal Society,A, vol. 136, pp. 619-630, 1932.
[2]Dickson J, “On-chip high-voltage generation in NMOS integrated circuits using an improved voltage multiplier technique,” IEEE Journal of Solid-State Circuits, vol. 11, no. 6, pp. 374-378, May 1976.
[3]J. T. Wu and K.-L. Chang, “MOS charge pump for low-voltage operation,” IEEE J. Solid-State Circuits, vol. 33, pp. 592–597, Apr. 1998.
[4]Feng Pan and Tapan Samaddar, Charge Pump Circuit Design, McGraw-Hill, 2006.
[5]M.D. Ker, S.L. Chen and S.C. Tsai, “Design of Charge Pump Circuit with Consideration of Gate-Oxide Reliability in Low-Voltage CMOS Process,” IEEE Journal of Solid-State Circuits, vol. 41, no. 5, pp. 1100-1107, May 2006.
[6]Yi-Hsin Weng, Hui-Wen Tsai, and Ming-Dou Ker, "Design to suppress return-back leakage current of charge pump circuit in low-voltage CMOS process," Microelectronics Reliability, vol. 51, no. 5, pp. 871-878, 2011.
[7]C.-H. Wu and C.-L. Chen, “A low-ripple charge pump with continuous pumping current control,” in Proc. 51st Midwest Symposium on Circuits and Systems, pp. 722–725, 2008.
[8]Chen Mingyang, Xiaobo Wu, and Menglian Zhao, "Novel high efficiency low ripple charge pump using variable frequency modulation," in Proc. IEEE 2010 International Conference on Microelectronics (ICM), 2010.
[9]B. Razavi, Design of Analog CMOS Integrated Circuits, McGraw-Hill, 2003.
[10]Cheng Zhang, Ming-Cheng Lin, and Marek Syrzycki, "Process variation compensated voltage controlled ring oscillator with Subtraction-based Voltage Controlled Current Source," in Proc. IEEE 2011 Canadian Conference on Electrical and Computer Engineering (CCECE), 2011.
[11]李育禎, "具自動控制工作週期的迪克森電荷泵", 清華大學電子工程研究所碩士學位論文,2012.
[12]Lee, Jae-Youl et al., "A regulated charge pump with small ripple voltage and fast start-up," IEEE Journal of Solid-State Circuits, vol. 41, no. 2, pp. 425-432, 2006.
[13]T. Tanzawa, “A switch-resistance-aware Dickson charge pump model for optimizing clock frequency,” IEEE Trans. Circuits Syst. II, Exp. Briefs, vol. 58, no. 6, pp. 336–340, Jun. 2011.
[14]J. S. Witters, G. Groeseneken, and H. E. Maes, “Analysis and modeling of on-chip high-voltage generator circuits for use in EEPROM circuits,” IEEE J. Solid-State Circuits, vol. 24, no. 5, pp. 1372–1380, Oct. 1989.
[15]T. Tanzawa and T. Tanaka, “A dynamic analysis of the Dickson charge pump circuit,” IEEE J. Solid-State Circuits, vol. 32, no. 8, pp. 1231–1240, Aug. 1997.