本論文針對不同的功率半導體測試電路，進行了整合與比較，以尋找能提供最佳元件切換特性量測結果之測試電路。寄生參數對量測結果所帶來的影響，足以導致顯著誤差，故需納入考量。在本論文中，利用不同的 PCB 佈線設計以及量測器材進行測試與比較。此外，為製造多種測試條件，亦利用了不同阻值的閘極電阻進行測試與比較。詳細的敘述和分析呈現於本論文中，以提供各種比較。

This thesis presents a comparison of different testers for power semiconductor devices to ascertain which tester provides a more accurate measurement in device switching characteristics. The effect of parasitic parameters of a tester can lead to in-accurate results, thus one should take the effect into account. In this thesis, different PCB layouts and measuring equipment are used for comparison. In addition, gate re-sistor resistance is varied to give various testing conditions. Detailed description and analysis are presented to give comparison in this thesis.

ABSTRACT
LIST OF TABLES
LIST OF FIGURES
Chapter 1 Introduction
1.1 Background
1.2 Motivation
1.3 Thesis Organization
Chapter 2 Literature Review
2.1 Testers Using Double Pulse
2.2 Power Semiconductor Devices
Chapter 3 Test Environment
3.1 Circuit Layout and Design
3.2 Instruments
3.3 Characteristics of Device Under Test
Chapter 4 Laboratory Test Results
4.1 Test Results Using CAPT Tester
4.2 Test Results Using CREE Tester
4.3 Comparative Study of CAPT Tester and CREE Tester
4.4 Test Results Using CAPT Tester with Current Monitor Appended
Chapter 5 Conclusion and Future Work
5.1 Conclusion
5.2 Future Work
REFERENCES

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