本論文是利用N-type低阻值SOI晶圓來實現熱致動壓阻感測之自我維持微機械振盪器，其最大特色在於不需使用主動電路，僅利用純物理式正迴授機制實現微機電元件之自我振盪，未來將提供時脈與感測之功能。我們分別在真中與空氣中都量測到共振器元件的頻率響應與振盪器元件的相位雜訊，其在真空中Q值最大可達到14,000，在空氣中也有3,000的優異表現，而振盪時最低的等效運動阻抗(R_(m_n ))為600Ω。若作為質量感測器使用，我們利用量測之相位雜訊轉換為Allan Deviation計算其質量感測性能，最低可得到小於1 femtogram的質量解析能力。
熱致動壓阻感測的運作原理，其主要為使用電源供應器給予一直流電源使致動器端產生電熱效應用以推動質量塊，並讓結構運動在共振頻上，使運動可以放大Q倍而得到位移最大值。在輸入適當的直流電流伴隨雜訊下可使元件開始發生熱、機、電耦合的交互循環運動，並使結構開始發生振盪，再藉由壓阻效應產生輸出電訊號。
在元件設計上，我們必須使用負的壓阻係數搭配良好的結構導電性，單晶矽材料是選用(100)方向來獲得最大壓阻系數；我們利用不同結構的設計來弭補製程上的限制，使直流電流給予的量值能夠更為彈性；在製程上僅運用兩片光罩與乾、濕蝕刻即可達成次微米的結構，並且可以再藉由二氧化矽當作Hard mask縮小致動器寬度來增進元件的性能，使直流的驅動功率可以降低至數十W的等級。
本研究在量測特性的表現，在真空中最低的操作直流功耗為70W，此為目前熱致動壓阻感測MEMS振盪器功率消耗的最低紀錄；相位雜訊在1kHz與100kHz分別有-110.06 dBc/Hz和-116.84 dBc/Hz表現，其振盪位移和頻率溫度係數(〖TC〗_f)的量測結果皆會進行詳細的介紹。

目錄
圖目錄
表目錄
摘要
第一章 前言
1-1 研究動機與背景
1-2 文獻回顧
第二章 原理分析與模擬
2-1 熱致動壓阻感測振盪器運作原理
2-2 熱致動壓阻感測振盪器運作設計與理論模型建立
2-2-1 機械運動系統
2-2-2 熱、機、電效應轉換系統
2-2-3 等效RLC電路模型
2-2-4 小訊號振盪迴圈模型
2-3 熱致動壓阻感測振盪器模擬
2-3-1 COMSOL結構頻率與元件電性模擬
2-3-2 Matlab振盪器電路迴圈模擬
2-3-3 ADS之RLC等效電路模擬
第三章 微製程與結果
3-1 SOI元件製程
3-2 元件製程結果
3-2-1 白光干涉儀檢視
3-2-2 SEM檢視
第四章元件量測與分析
4-1 開迴路量測
4-1-1 Wing-type II (24-AN2)
4-1-2 Wing-type I (10-AE1)
4-1-3 Free I-Bar (25-AW3)
4-2 閉迴路量測
4-3 LDV量測
4-4 頻率溫度係數量測
第五章 結論與未來研究
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