經由固相磊晶的技術，我們沉積一層非晶的錫化鍺薄膜且經過550度的快速熱退火後，可以成功在鍺基板上形成磊晶的錫化鍺。在退火之前，我們必須覆蓋一層二氧化矽在非晶的錫化鍺上，這是因為防止退火時錫在錫化鍺表面發生沉澱，所以我們藉由降低錫原子的表面遷移率，而得到平滑的表面結構。在物性分析方面，我們從TEM、EDS、XRD以及AFM上得知磊晶的錫化鍺薄膜擁有單晶的結構、均勻的厚度及成分以及很小的表面粗糙度（RMS = 0.56 nm），證明此為一高品質的薄膜。而從XPS的分析上，可看出利用HF/HCl的混合溶液即可去除錫化鍺表面的錫氧化物，進而可製作出氧化層為Yb2O3的MOS電容，且等效氧化層厚度只有0.55 nm。在電性分析方面，因為電容的磁滯小到幾乎可忽略，可得知Yb2O3裡的缺陷很少。我們也量測到在很小的EOT時，閘極的漏電流只有0.4 A/cm2，證明了使用Yb2O3當作閘極氧化層是可行的。總之，根據先前介紹的特點，相信利用此方法製作出的磊晶錫化鍺將有益於高效能錫化鍺MOS元件的實現。

總目錄
摘要…………………………………………………………………………………………......i
Abstract……………..……………………………………….…………...……...ii
致謝………………………………………………………….………………...……………..iii
總目錄…………………………………………………………………………..………..…. iv
表目錄…………………………………………………………………..…...………....vi
圖目錄…………………………………………………………………………..…....….vii

第一章 序論…………………………………………………………………………………...1
1-1 研究背景………………………….…………………………………………....1
1-2 GeSn能帶機制.……………………………………………………………...2
1-3 介面層……………………………………………………….....………..….3
1-4 研究動機……………………………………………..…………………………….4
1-5 論文結構………………………………………………………………..…..….4

第二章 文獻回顧
第一部份：錫化鍺不同的製程方式及其優缺點………………………………………….10
2-1 以分子束磊晶法製作GeSn..............................................10
2-2 以化學氣相沉積法製作GeSn…………………………...………………………..11
2-3 以固相磊晶法製作GeSn……………………………………………..…..………..12
第二部份：錫化鍺介面鈍化之方式
2-4 以氧化鍺為基礎的介面層-GeSnOｘ……………………………..................................…..20

第三章 結果與討論
錫化鍺電容元件及以Yb2O3作為介電層之研究…………………………………………..24
3-1 TaN/Yb2O3/GeSn/Ge MOS元件之製作………………………….......…24
3-2 TaN/Yb2O3/GeSn/Ge元件之特性討論……………………………………..…..25
3-2-1 穿透式電子顯微鏡分析…………………………………………….......…....25
3-2-2 X射線繞射分析……………………………………………………………...........26
3-2-3 原子力顯微鏡分析…………………………………………………………..........26
3-2-4 X射線光電子能譜分析…………………………….……………...............................................27
3-2-5 電容特性分析…………………………………………………………...….........28
3-2-6 電流特性分析………………………………………………………………...........29
3-2-7 磁滯現象分析…………………………………………………………………..........29

第四章 結論與未來展望……………………………………...………………………........42
參考文獻.........................................................................................................................................................................44

第一章
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第二章
[2.1] G. Han, S. Su, C. Zhan, Q. Zhou, Y. Yang, L. Wang, P. Guo, W. Wei, C. P. Wong, Z. X. Shen, B. Cheng, and Y. C. Yeo, “High-mobility germanium-tin (GeSn) p-channel MOSFETs featuring metallic source/drainand sub-370 °C process modules,” in Proc. IEEE IEDM, pp. 402-404, 2011.
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第三章
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