隨著各種新型氧化物半導體的研究發明，應用在薄膜電晶體的主動通道層，平板顯示器等相關產品在社會上逐漸普及，形成巨大的商業市場，為了減少製程上的成本又同時保持優異的電性表現，開發合適的二元氧化物半導體是不曾停歇的。SnO2是一種極具吸引力的氧化物半導體，在金屬鋅、銦及錫之中，其擁有研究中最高的本質遷移率及能帶間隙，然而，傳統的未摻雜SnO2薄膜電晶體具有高操作電壓、高次臨界擺幅以及低載子遷移率特性，會限制高速以及高解析度的顯示器發展，因此，本論文提出一種方式來提升元件特性，我們使用SnO混合少量SnO2氧化物半導體薄膜當作元件的通道層，成功實現N型上閘極結構的薄膜電晶體，並使用高介電係數材料ZrO2作為元件的閘極介電層，此薄膜電晶體在400度的退火條件下，因為高閘極電容密度及低的介面缺陷密度，元件具有相當陡峭的次臨界擺幅，此外，元件同時擁有較高的載子遷移率及不錯的開關電流比。
綜合以上的結果，我們認為此未摻雜的二元氧化物半導體具有相當大的潛力成為低成本及值得量產的薄膜電晶體技術之一。

第一章序論 1
1-1 薄膜電晶體發展歷史 1
1-2 金屬氧化物半導體的優勢 2
1-3 高介電常數材料 3
1-4 研究動機 6
第二章文獻回顧 11
2-1 氧化錫(SnO)薄膜基本特性 11
2-2 二氧化錫(SnO2)薄膜基本特性 11
2-3 SnO在薄膜電晶體之應用 13
2-4 Top-gated結構與Bottom-gated結構比較 13
2-5 ZrO2介電層在薄膜電晶體之應用 14

第三章 實驗規劃及製作 24
主題 以SnO為通道層並使用ZrO2作為介電層之薄膜電晶體 24
3-1 TaN/ZrO2/SnO2/Insulator/Si TFT元件之製作 24

第四章 實驗結果與討論 29
4-1 XRD 結晶繞射分析 29
4-2 XPS 化學成分分析 30
4-3 電容及介面缺陷密度分析 30
4-4 IDS-Vg 曲線的特性探討 31
4-5 IDS-VDS 及Ig-Vg曲線的特性探討 33
4-6 遷移率（Mobility）的萃取 34
4-7 可靠度分析-PBTI 35

第五章 結論與未來展望 43
參考文獻 44

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