摘要
本篇論文呈現出我們能藉由不同的成長方式(自然成長和退火處理)來調控有機薄膜內分子排列方式，進而改變有機薄膜內電子態結構和有機薄膜與金屬介面間的能階並列關係。我們藉由角解析光電子能譜了解極性酞菁(氯鋁化酞菁)薄膜成長於銀薄膜上時有機薄膜結構與與電子態結構關係，其中一層自然成長的有機薄膜主要是由氯在下的酞菁分子所構成；而一層退火處理的有機薄膜則是氯在上的酞菁分子所構成，同時我們也觀察到以自然成長方式生成的有機薄膜，其真空能階(最高佔據分子軌域)會隨著薄膜厚度增加而上升(靠近費米能階)；但以退火處理方式生成的有機薄膜，其真空能階(最高佔據分子軌域)會隨薄膜厚度增加而降低(遠離費米能階)，此種現象說明著我們能藉由成長薄膜方式的不同來改變有機薄膜與金屬介面間能階並列關係，而這對於有機電子元件的製作上極為重要。

目錄
摘要 I
Abstract II
1.導論 1
2.基礎理論 2
2.1光電子能譜 2
2.1.1簡介 2
2.1.2光電效應理論模型 3
2.1.3角解析光電子能譜 6
2.2二維電子結構 8
2.2.1表面態 8
2.2.2量子井態 11
2.3有機材料 13
2.3.1有機分子電子結構 13
2.3.2介面偶極矩 14
3.實驗儀器與原理 17
3.1電子能量分析儀 17
3.1.1接收模式 19
3.1.2解析度 19
3.2同步輻射光源 20
3.3超高真空3.1電子能量分析儀 21
3.4 離子濺射槍 23
4.ClAlPc成長在銀薄膜/鍺(111) 24
4.1樣本製備 24
4.1.1清潔鍺(111)表面 24
4.1.2成長銀薄膜與有機薄膜 25
4.1.3有機材料 27
4.2功函數的測量與分析 29
5.實驗結果與討論 32
5.1 ClAlPc AG/12層銀薄膜/Ge(111) 32
5.2 ClAlPc AN/12層銀薄膜/Ge(111) 34
5.3比較自然成長和退火處理方式對有機薄膜介面結構影響 36
5.3.1自然成長與退火處理樣本的真空能階變化 36
5.3.2自然成長與退火處理樣本的分子軌域變化 41
5.3.3 比較自然成長與退火處理對有機薄膜內能階並列關係影響 43
6.結論 47
參考文獻 48

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