對於太陽能電池來說，表面缺陷為整體缺陷的重要來源，本實驗在想藉著沉積鈍化層，來達到提高少數載子生命周期的目標。而氧化鋁在一些文獻中指出有著良好的鈍化效果，以ALD沉積之氧化鋁帶有負電荷，對P型矽基板可以在背面有著良好的鈍化效果。
氧化鋁的沉積方式也很多樣，可以由ALD、PECVD、濺鍍...等方式成長，我們想嘗試新的方法，用氧化法在矽表面生長出一層氧化鋁。並量測其少數載子生命周期是否有增加來作為鈍化效果的依據。
最後將此種方式生長之氧化鋁層作為鈍化層，製作PERL結構之太陽能電池，並量測各項參數觀察是否有鈍化之功效。

圖目錄 V
表目錄 VIII
第1章 序論 1
1.1 太陽能電池發展 1
1.2 文獻回顧 2
1.3 研究目的 4
1.4 論文大綱 4
第2章 基本原理 6
2.1 太陽能電池基本原理 6
2.2 太陽能電池等效電路 10
2.3 太陽能電池參數特性 13
2.4 太陽能電池的損失 15
2.5 氧化原理 17
2.6 金屬氧化層半導體電容(MIS Capacitor) 18
第3章 實驗方法與流程 22
3.1 實驗架構 22
3.2 太陽能電池製程步驟 22
3.3 C-V測試片之製程 33
第4章 實驗結果與討論 35
4.1 鈍化層之討論 35
4.2 太陽能電池參數量測 48
第5章 結論 52
參考文獻 54

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