帳號:guest(216.73.216.146)          離開系統
字體大小: 字級放大   字級縮小   預設字形  

詳目顯示

以作者查詢圖書館館藏以作者查詢臺灣博碩士論文系統以作者查詢全國書目
作者(中文):李家暐
作者(外文):Lee, Chia-Wei
論文名稱(中文):探討應用於雷射干涉重力波偵測器之以電漿輔助化學氣相沈積法製備於矽懸臂之氮化矽薄膜之材料特性與機械損耗
論文名稱(外文):Study of the material properties and the mechanical loss of the silicon nitride films deposited by PECVD method on silicon cantilever for laser interference gravitational wave detector application
指導教授(中文):趙煦
口試委員(中文):李正中
任貽均
徐進成
學位類別:碩士
校院名稱:國立清華大學
系所名稱:光電工程研究所
學號:100066515
出版年(民國):102
畢業學年度:102
語文別:中文
論文頁數:67
中文關鍵詞:機械損耗矽懸臂氮化矽應力重複夾持誤差
外文關鍵詞:mechanical losssilicon cantileversilicon nitridestressre-clamping error
相關次數:
  • 推薦推薦:0
  • 點閱點閱:201
  • 評分評分:*****
  • 下載下載:16
  • 收藏收藏:0
雷射干涉重力波偵測器組織(Laser Interferometer Gravitational-Wave Observatory, LIGO)以建置光學重力波偵測器為主要研究項目,其偵測儀器需要具備以光學損耗、機械損耗皆低的光學薄膜材料來製作共振腔之高反射鏡;機械損耗來源很多,而總體雜訊最低也就是量測系統最靈敏處之頻率範圍大約在100Hz左右,在此範圍內以高反射鏡光學薄膜材料本身之熱擾動造成的雜訊最為嚴重;本實驗室參與LIGO計畫,並以室溫下量測機械損耗之系統利用單晶矽懸臂振動及其衰減時間來量測、計算薄膜之機械損耗,再利用機械損耗換算出薄膜材料熱擾動大小,期望以低熱擾動的薄膜材料來提昇重力波觀測儀的靈敏度。
本研究分為兩大部分,其一為單晶矽懸臂基板完整製程,包含懸臂尺寸設計、光罩設計、KOH溶液濕蝕刻製程及製作過程所發生之基板缺陷情形、改善方式;
接著詳述以電漿輔助化學氣相沉積鍍製氮化矽光學薄膜之過程,以不同製程氣體流量所沉積之氮化矽薄膜為研究對象進行材料特性量測,包含個別之化學成分組成分析、光學性質(折射率、消散係數)、機械性質(楊氏係數、薄膜應力),最重要的是探討薄膜應力與機械損耗間的關係。由本實驗室所建置之常溫下量測機械損耗之系統測量氮化矽薄膜之機械損耗大約為10-4數量級,但應力值與機械損耗之關係並不顯著,原因可能為重複夾持誤差的影響,筆者將於第四章敘述重複夾持誤差造成的原因及數據討論,目前以增加量測次數的方式希望解決重複夾持誤差所造成的影響,加強機械損耗量測系統之準確度。
摘要 I
誌謝 II
目錄 III
圖目錄 V
表目錄 VII
第一章 導論
1-1 引言 1
1-2 研究動機 3
第二章 氮化矽薄膜製程
2-1基板製作流程 6
2-1.1 單晶矽懸臂(silicon cantilever)元件結構介紹 6
2-1.2 單晶矽懸臂(silicon cantilever)製程介紹 9
2-1.3 矽懸臂以氫氧化鉀溶液濕蝕刻過程與疑難排解 13
2-2電漿輔助化學氣相沉積(PECVD)系統及氮化矽薄膜介紹 19
2-2.1 電漿輔助化學氣相沉積(PECVD)系統介紹 19
2-2.2 以電漿輔助化學氣相沉積(PECVD)沉積之氮化矽薄膜介紹 20
2-3氮化矽薄膜鍍製流程與參數設定 23
第三章 不同參數生成下之氮化矽薄膜特性研究
3-1 量測儀器與原理介紹 25
3-1.1 電子能譜化學分析儀(ESCA) 25
3-1.2 橢圓偏光儀(Ellipsometer) 26
3-1.3 奈米壓痕儀(Nano-indenter) 27
3-1.4 場發射穿透式電子顯微鏡(TEM) 33
3-1.5 應力量測系統(Stress Measurement System) 36
3-2 量測結果 38
3-2.1 氮化矽薄膜化學成分分析結果 38
3-2.3 氮化矽薄膜楊氏係數量測結果 40
3-2.4 氮化矽薄膜晶相觀測結果與計算鍍率結果 41
3-2.5 氮化矽薄膜應力量測結果 43
第四章 機械損耗與氮化矽薄膜性質相關性分析
4-1 機械損耗量測原理與系統介紹 45
4-2氮化矽薄膜機械損耗量測結果 48
4-2.1 基板量測 48
4-2.2 基板鍍膜後量測 50
4-2.3 薄膜機械損耗計算與分析 51
4-3氮化矽薄膜應力與機械損耗相關性分析 54
第五章 總表結論與未來展望
5-1 結論 56
5-2 未來展望 58
附錄 59
參考文獻 64
[1] I. W. Martin, “Studies of materials for use in future interferometric gravitational wave detectors ”, Ph.D thesis, University of Glasgow, pp.13-26 , 2009
[2] LIGO Scientific Collaboration, “Instrument science White Paper”, LIGO Doucument, LIGO-T1100309-v5, pp.7, 2011.
[3] H. B. Callen et al., “Irreversibility and generalized noise ”, Physical Review , Vol. 83, pp.34-40, 1951
[4] R. F. Greene et al., “On the formalism of thermodynamic fluctuation theory”, Physical Review , Vol. 83, pp.1231-1235, 1951
[5] H. B. Callen et al., “On a theorem of irreversible thermodynamics”, Physical Review , Vol.86 , pp.702-710, 1952
[6] Krzysztof Hejduk et al., “Dielectric coatings for infrared detectors”, Optica Applicata, Vol. XXXV, No. 3, 2005
[7] D. R. Southworth et al., “Stress and Silicon Nitride: A Crack in the Universal Dissipation of Glasses”, Physical Review Letters, Vol. 102, 225503, 2009
[8] Jiansheng Wu et al., “How stress can reduce dissipation in glasses", Physical Review B, Vol. 84, 174109, 2011
[9] K. D. Mackenzie et al., “Silicon nitride and silicon dioxide thin insulating films & other emerging dielectrics”, Vol. VIII, PV2005-01, pp.148-159, ElectroChemical Society, Pennington, NJ , 2005
[10] G. Gspan et al., “ Determination of local stress in PECVD nitride films”, Microelectronics Reliability, Vol. 30, Issue 5, pp. 911-913, 1990
[11] Xiangdong Xu et al., “Hard and relaxed a-SiNxHy films prepared by PECVD: Structure analysis and formation mechanism”, Applied Surface Science, Vol. 264 , pp.823– 831 , 2013
[12] Peter J. Hesketh et al., “Surface Free Energy Model of Silicon Anisotropic Etching”, Journal of Electrochemical Society, Vol. 140, No. 4, 1993
[13] P. A. Alvi et al., “A study on anisotropic etching of (100) silicon in aqueous KOH solution”, International Journal of Chemical Sciences, Vol. 6(3), pp.1168-1176, 2008
[14] 陳柏穎, “矽晶圓非等向性溼式蝕刻之特性研究”, 國立中山大學碩士論文, 2002
[15] Donald L. Smith et al., “Mechanism of SiNxHy Deposition from NH3-SiH4 plasma”, Journal of Electrochemical Society, Vol. 137, pp.614-623, 1990
[16] J. N. Chiang et al., “Mechanistic Considerations in the Plasma Deposition of silicon nitride film”, Journal of Electrochemical Society ,Vol. 137, pp.2222-2226, 1990
[17] L. Smith et al, Materials Research Society Symposium Proceedings, Vol. 165, 1990
[18] L. Vanzetti et al, “Correlation between silicon-nitride film stress and composition: XPS and SIMS analyses”, Surface and Interface Analysis, Vol. 38, Issue 4, pp.723-726, 2006
[19] Gregory T. A. Kovacs, “Micromachined Transducers Sourcebook”, McGraw-Hill Companies, pp.81-83, 2000
[20] Klaus K. Schuegraf, “Handbook of Thin-Film Deposition Processes and Techniques”, Principles, Methods, Equipment and Applications, Noyes Publication, pp.124-126, 1988
[21] M. Madou, “Fundamentals of microfabrication : The science of miniaturization”, Boca Raton, FL:CRC Press, 2002
[22] H. Xiao, 羅正忠, 張鼎張, “半導體製程技術導論”, 歐亞書局, 2005
[23] M. Ohring et al., Materials science of thin films: deposition and structure :Academic press, 2002
[24] Wright, D.N. et al., “Plasma-enhanced chemical vapour-deposited silicon nitride films; The effect of annealing on optical properties and etch rates”, Solar Energy Materials & Solar Cells, Vol. 92, pp. 1091-1098 , 2008
[25] D. Nečas et al., “Optical characterization of non-stoichiometric silicon nitride films”, Phys. Status Solidi (C), Vol. 5, Issue 5, pp.1320-1323, 2008
[26] Daniel Benoit et al., “Determination of silicon nitride film chemical composition to study hydrogen desorption mechanisms”, Thin Solid Films, Vol. 519, Issue 19, pp. 6550–6553, 2011
[27] Huang, H. et al., “Characteristics of low temperature PECVD silicon nitride for MEMS structural materials ”, International Journal of Modern Physics B, Vol. 20(25-27), pp. 3799-3804 , 2006
[28] Pierre Morin et al., “A comparison of the mechanical stability of silicon nitride films deposited with various techniques”, Applied Surface Science ,Vol. 260, pp.69- 72 , 2012
[29] J. H. Scofield , “Hartree-slater subshell photoionization cross-sections at 1254 and 1487 eV”, Journal of Electron Spectroscopy and Related Phenomena, Vol. 8, Issue 2, pp.129-l 37, 1976
[30] G. E. Jellison et al., “Parameterization of the optical functions of amorphous materials in the interband region”, Applied Physics Letters, Vol. 69, Issue 3 ,pp.371, 1996
[31] G.E. Jellison et al., “Spectroscopic ellipsometry characterization of thin-film silicon nitride”, Thin Solid Films , Vol. 313-314, pp.193-197, 1998
[32] Oliver W. C. et al., “Improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments”, Journal of Materials Research, Vol. 7, pp.1564-1580, 1992
[33] “Operational manual of Nano Indenter XP System” ,MTS company, USA
[34] A Stoffel et al., “LPCVD against PECVD for micromechanical applications” J. Micromech. Microeng., Vol. 6 ,Issue. 1 , pp.20-33, 1996
[35] 汪建民, “材料分析”, 國家圖書館, 2009
[36] G. Gerald Stoney, “The Tension of Metallic Films Deposited by Electrolysis”, Proceedings The Royal of Society A, Vol.82, pp.172-175, 1909
[37] 許育禛, “高密度電漿化學氣相沉積法製作低應力氮化矽薄膜於微機電應用之研究”, 國立成功大學, 碩士論文, 2002
[38] S. T. Thornton et al., “Classical dynamics of particles and systems”, Brooks Cole, fifth edition, pp. 109-121, 2003
[39] B. S. Berry et al., “Vibrating reed internal friction apparatus for films and foils”, IBM journal of research and development, Vol.19, pp.334, 1975
[40] R. M. Jones, “Mechanics of composite materials”, ch3.2, Philadelphia : Taylor & Francis, 1999,
[41] 歐政勳, “室溫下量測機械損耗之系統設置與量測熔融石英玻璃懸臂及單晶矽懸臂之初步量測分析”, 國立清華大學, 碩士論文, 2012
[42] S. Chao et al., “Mechanical loss of silicon nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) method”, LIGO Doucument, LVC meeting, LIGO-G1300171, 2013.
[43] R Flaminio et al., “A study of coating mechanical and optical losses in view of reducing mirror thermal noise in graviational wave detectors”, Classical and Quantum Gravity, Vol. 27 , 2010
 
 
 
 
第一頁 上一頁 下一頁 最後一頁 top

相關論文

1. 以電漿輔助化學氣相沈積法於矽懸臂沈積之氮化矽薄膜應力對機械損耗之影響暨機械損耗量測系統改善
2. 低溫機械損耗量測系統之設置與熱退火對奈米多層膜機械損耗之研究
3. 使用 LPCVD 方法沉積 SiN 在矽懸臂基板量測其機械損耗,並開發用於量測機械損耗的 GNS
4. 利用電漿輔助化學氣相沉積法鍍製四分之一波長厚度SiN0.40/SiO2堆疊之室溫機械損耗
5. 以電漿輔助化學氣相沉積法鍍製於矽懸臂之氮化矽其熱退火後對於室溫機械損耗之影響
6. 以電漿輔助化學氣相沉積法沉積氮化矽薄膜及其與二氧化矽之堆疊膜之低溫機械損耗
7. 利用電漿輔助化學氣相沉積法鍍製四分之一光學厚度氮氧化矽與氮化矽堆疊膜應用於雷射干涉重力波偵測器反射鏡之研究
8. 利用電漿輔助化學氣相沉積法沉積之非晶矽與二氧化矽薄膜其光學與機械性質之研究
9. 應用於雷射干涉重力波偵測器開發工作之單晶矽懸臂樑之機械震動性質研究
10. 以電漿輔助化學氣相沉積法鍍製高氮氮化矽薄膜其熱退火對光學特性與機械特性之影響
11. 以離子束濺鍍法鍍製氮化矽薄膜其光學特性之探討
12. 雙面鍍製於矽懸臂之高應力氮化矽薄膜之應力與機械損耗研究
13. 以低壓化學氣相沉積法鍍製之氮化矽薄膜在雷射重力波偵測器反射鏡應用之研究
14. 鍺離子佈植SiO2薄膜之非線性通道波導之研究
15. 在五氧化二鉭與二氧化矽混合膜平面波導上施以熱極化之研究
 
* *