本論文提出雪崩二極體(Avalanche photodiodes)與的設計流程與製程方式，藉以實現高增益的雪崩二極體。PIN二極體在不同的間距下，有不同的崩潰電壓，藉由調整i層的間距，我們期望PIN二極體可達到低崩潰電壓高增益。
本論文以低成本的RMG製成製作單晶鍺，再以控制特定的佈值及退火條件下製作PIN二極體。我們在Silicon晶圓上的測試元件量測到最小的崩壞電壓為4.5V，以1310nm的光垂直入射崩壞電壓為9V的光偵測器，在網路分析儀的量測下，其頻寬為7.3GHz。我們將實驗量測的光電流、暗電流和頻寬代入敏感度的公式。計算結果得出最小敏感度為-24dBm。

A Germanium photodetector with a low breakdown voltage of −4.5 V is demonstrated by narrowing down the intrinsic layer width of interdigitated p-i-n junctions to ∼150 nm. It reaches the physical limit of avalanche breakdown in which the performance degradation caused by the Zener tunneling process is negligible. Dark current <100 nA at −1 V is measured, and a gain exceeding 20 at −10 V is obtained with an 1310-nm laser illumination. The intrinsic bandwidth is determined to be 7.3 GHz, suggesting our device is applicable for a 7.3-Gb/s high-speed optical receiver application and beyond. Sensitivity of this device arrived -24dBm.

中文摘要 i
Abstract ii
Acknowledgment iii
Table of Contents v
List of Figures vii
List of Tables x
Chapter 1 簡介[Introduction] 1
1.1 雪崩光偵測器 1
1.2 快速熱熔退火(RMG) 6
1.3 論文架構 8
Chapter 2 雪崩光偵測器原理 10
2.1 光偵測器 10
2.1.1 PiN光偵測器 10
2.1.2 雪崩光偵測器(Avalanche Photodetector) 15
2.2 敏感度(Sensitivity) 20
2.3 Effect of dead space 23
Chapter 3 製程設計[Design and Fabrication] 30
3.1 特殊製程介紹(Special process introduction) 30
Chapter 4 實驗架設與結果 37
4.1 元件特性 37
4.2 高頻量測[High speed measurement] 44
Chapter 5 結論與未來展望 51
Appendix 54
Appendix2 71
References 93

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