GaN材料在藍光LED上有著很大的發展空間，但由於GaN晶體與基板材料存在著晶格常數不匹配，故在應用上受限。近年來，以圖形化藍寶石基板作為基底成長之GaN發光二極體，不僅能夠有效降低GaN成長的差排密度，並且能夠提高LED的光萃取效率，有廣大的研究空間。本文成功地利用不同尺寸的奈米球微影技術製作出圖形化藍寶石基板，再將GaN晶體成長於其上，並比較不同尺寸的圖形化藍寶石基板所成長之GaN晶體特性。
我們利用光致螢光光譜 (PL) 和X光繞射 (XRD)分析在不同條件之圖形化藍寶石基板所成長的氮化鎵。結果皆顯示在週期為100 nm及占空比為100%的圖形化藍寶石基板上所成長之氮化鎵擁有最佳之磊晶品質。在我們所製備的基板當中，我們發現當基板的圖形週期愈小，占空比愈接近100%的情況下，所得到的磊晶品質愈理想。

GaN material has a great development space for blue LED. However, lattice mismatch exists between GaN and substrate material, so it is restricted to be used. Recently, GaN-based LED grown on a patterned sapphire substrate (PSS) is widely studied. It can not only efficiently reduce threading dislocation (TD) density of GaN grown on, but also enhance light extraction efficiency as well. We successfully fabricate PSS of different scales by nanosphere lithography and compare the characteristics of GaN on each substrate.
We compared the quality of GaN films grown on them by PL and XRD. The results indicate that the quality is the best when grown on pattered sapphire substrates with period 100 nm and duty ratio 100%. The results match. We can conclude that the quality of GaN films is better when grown on PSS with smaller period and larger duty ratio.

Chapter 1 Introduction
Chapter 2 Principles and Background
2.1 Self-Assembly of Photonic Crystals
2.2 Nanosphere Lithography (NSL)
2.3 GaN Growth On Patterned Sapphire Substrates
Chapter 3 Experimental Process
3.1 Self-Assembly of Polystyrene Nanospheres
3.1.1 Spin-Coating On Silicon
3.1.2 O-ring Confinement On Silicon
3.1.3 O-ring Confinement On Sapphire
3.2 Reactive Ion Etching (RIE)
3.2.1 O2 Plasma
3.2.2 RIE etching of Sapphire Substrates
3.3 Analysis Methods
3.3.1 Photoluminescence (PL) Analysis
3.3.2 X-ray Diffraction (XRD) Analysis
Chapter 4 Results and Discussion
4.1 Photoluminescence (PL) Characteristics
4.2 X-ray Diffraction (XRD) Analysis
Chapter 5 Conclusion

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