篇論文中，我們使用兩種不同的磊晶結構的氮化鎵試片製作了準垂直型 SBD、JBS和PiN二極體。傳統的SBD二極體元件操作在反向偏壓時，存在漏電流過大而導致元件提早崩潰的問題，所以我們設計製作了不同寬度的JBS元件，嘗試降低元件操作在逆偏時所產生的漏電流。且我們在兩種不同磊晶結構的氮化鎵試片上，用了不同的製程去製作SBD元件，比較兩種製程的電性差異。
從I-V量測結果來看，JBS元件確實可以稍微降低元件的反向漏電流，而蕭基接面在製程上有經過電漿的轟擊，其漏電流明顯地上升。然而蕭基接面沒經過任何損傷破壞的SBD和PiN元件有比較好的電性表現，其崩潰電壓分別為590V和380V，而以PiN元件有較高的current on/off ratios。
從C-V量測結果來看，試片的N-層濃度不如預期的高，可能與N-層中的缺陷密度有相當大的關係，以至於我們的SBD特徵導通電阻偏大，順向導通特性不如預期。

目錄
中文摘要 II
Abstract III
目錄 IV
圖目錄 VII
表目錄 X
第一章 序論 1
1.1 前言 1
1.2 研究動機與文獻回顧 3
1.3 研究方向簡介與論文架構 8
1.3.1研究方向簡介 8
1.3.2論文架構 8
第二章 材料介紹與實驗設計 9
2.1 氮化鎵材料介紹及基板選擇 9
2.2 蕭基二極體原理 11
2.3 接面位障蕭基二極體原理 14
2.4 元件設計 15
2.4.1氮化鎵磊晶介紹 15
2.4.2元件Layout設計介紹 17
2.5 元件模擬 19

第三章 光罩設計與元件製程 21
3.1 準垂直型蕭基和接面蕭基二極體元件設計流程 21
3.1.1準垂直型蕭基二極體元件 21
3.1.2準垂直型接面蕭基二極體元件 22
3.2 p-GaN蝕刻及對準記號(Mask1) 22
3.3 深蝕刻阻擋層及深蝕刻 (Mask2) 24
3.3.1深蝕刻阻擋層 24
3.3.2深蝕刻 26
3.4 N型蕭基接觸(Mask3) 28
3.5 N型歐姆接觸(Mask4) 29
第四章 量測結果分析 32
4.1 正向電性分析 32
4.1.1元件N型歐姆接觸分析 32
4.1.2元件正向偏壓特性 34
4.2 元件反向偏壓特性 37
4.3 C-V電性分析 44
4.3.1常溫元件C-V量測 44
4.3.2.升溫元件C-V量測 47
4.4 C-t電性分析 52

第五章 結論與未來工作 58
參考文獻 59

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