非揮發性記憶體已經是當代的主流，隨著可攜式電子產品的蓬勃發展更是不可或缺。其中「銅導電橋式記憶體 (CBRAM)」由於結構簡單，存取速度快，以及省電的特性，被認為是最有可能成為下一個世代的非揮發性記憶體元件。在本文中，首先利用電腦軟體TCAD對CBRAM進行模擬，改良元件的結構，針對CBRAM的特性做最佳化，最後將元件實作並搭配電晶體組合成一個1T1R結構的記憶體陣列，以應用在嵌入式記憶體為目標，展現它在次世代記憶體中的競爭優勢。
CBRAM 為金屬/固態電解質/絕緣層/金屬(MIM) 多層結構所堆疊而成，其中以MOS 製程所常用的銅、鎢分別用來充當上、下電極，銅原子擴散係數較高的介電材料當作固態電解質，藉由操作時給予元件適當的偏壓，在絕緣層中建立一條銅通道，使得元件可在高低電組態任意轉換。但我們也觀察到一個現象，在銅電阻絲距離固態電解質< 1nm時，由於電壓都集中在這個間隙上，產生超過10MV/cm的電場，超過絕緣層的崩潰電場並造成許多不可避免的缺陷，降低元件的操作次數。為了避免這個情況發生，我們在固態電解質層中夾了一層P-type的氧化銅當作緩衝層，不但可降低絕緣層的電場，減少上述的疑慮，還可以有效的防止銅離子擴散回固態電解質層中，改善CBRAM的可靠度。最後，為了應用在嵌入式記憶體上，我們用RTA模擬了焊接時的高溫製程進行測試，確保元件禁得起封裝時的高溫製程。

中文摘要 II
Abstract III
Acknowledgements IV
Content V
List of Figure VI
Chapter 1 Introduction 1
1-1 The Development History of Non-Volatile Memory 1
1-2 Research Motivation and Purpose 3
1-2-1 Enhance Retention in High Temperature 3
1-2-2 1T1R Array Based on CBRAM 4
Chapter 2 Physics and Operations of CBRAM 6
2-1 Basic Theory of CBRAM 6
2-1-1 CBRAM Structure 6
2-1-2 CBRAM Operation 7
2-1-3 Forming Voltage 13
2-2 Filamentary-Switching Model 14
2-2-1 Electrode Kinetics of CBRAM 14
2-2-2 Modeling the Set/Reset Characteristics 16
2-3 Using a E-field Moderating Layer 19
Chapter 3 Experimental Process and Details 23
3-1 Materials Analysis and Measurements 23
3-1-1 Hall measurement 25
3-1-2 X-ray Diffraction Analysis (XRD) 28
3-1-3 X-ray Photoelectron Spectroscopy Analysis (XPS) 32
3-2 Device Fabrication 37
Chapter 4 Results and Discussion 40
Chapter 5 Conclusion 49
References 50

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