2004年曼徹特大學的Andre Geim與Konstantin Novoselov使用膠帶將石墨烯從高定向熱裂解石墨烯上分離，證明了二維才要可以穩定存在後，眾多科學家爭相投入石墨烯的研究。除了基礎石墨烯物理特性外，石墨烯兼具透明與導電的特性，隨即被應用於光電元件上。光電元件中，入門門檻最低的太陽能電池則為石墨烯應用的首選，而石墨烯/矽蕭特基接面太陽能電池與傳統的ITO蕭特基接面太陽能電池相比，材料與製程上都較為低廉。在2009年IBM團隊首次將石墨烯應用於超高速光感測器，但是石墨烯本身的透光性佳，同時也表示其吸收光能力不足，導致石墨烯的光響應一直無法超越CMOS製程下的光感測器。之後研究石墨烯光感測器也因此多半著重於提升光響應的方向上。除了石墨烯本身材料問題外，在製程方面，欲得到石墨烯薄膜需要經過轉印的步驟，轉印步驟導致了石墨烯無法有效的與CMOS製程結合。本篇論文研究兩種石墨烯薄膜: 經過轉印後的石墨烯與使用ECR-CVD直接成長的石墨烯。兩者分別製作成光感測元件，兩種石墨烯與矽間的蕭特基接面元件特性、兩種光感測元件對光的效能。轉移石墨烯光感測元件在摻雜前的的光響應可達到301 mA/W、摻雜過後可達到302 mA/W。而直接成長石墨烯可以達到90 mA/W。

In 2004,A.K Geim and K.S. Novoselov successfully isolated a single atomic carbon layer from HOPG using mechanical exfoliation methods. Since then, graphene has attracted enormous interest due to its unique properties. Amongst the physical properties of graphene, its high transmittance and conductive properties have shown great potential for photovoltaic applications. Within optoelectronics, the first choice for graphene applications lies within solar cells. Graphene / silicon Schottky junction solar cells, when compared with conventional ITO Schottky junction solar cell reap serious benefits from graphene technology; this in terms not only of device fabrication but also of materials, since graphene can be largely inexpensive to manufacture.
In 2009, an IBM team used graphene for ultrafast optical sensors. Graphene’s high transmittance means light absorption cannot be readily achieved; as such the photo-response of graphene is not good as a CMOS sensor. This work focuses on improving photoresponsivity for graphene photodetectors. In addition to the inherent problem of graphene, obtaining graphene necessarily needs a transfer process, the transfer process lead to graphene being effectively combined with the CMOS process. This thesis uses two methods of obtaining graphene: Graphene from transfer process and graphene directly grown on silicon substrate by ECR-CVD. We fabricate two kinds of graphene-Schoktty junction photodetector. We analyze their junction characteristic and their photoelectric effect. The responsivity of pristine transfer graphene device is 301mA/W, doped transfer graphene device is 302 mA/W and ECR graphene device is 90mA/W.

摘要 I
Abstract III
目錄 VII

第一章緒論 1
1.1 動機 1
1.1.1 以矽材料為主的半導體科技 1
1.1.2 目前半導體技術發展侷限 2
1.2 石墨烯 2
1.2.1 石墨烯製備方法 3
1.2.2 石墨烯光元件 6
1.3 論文結構 8

第二章石墨烯基礎物性 11
2.1 單層石墨烯晶格結構 11
2.2 石墨烯的電子聲子能帶 12
2.2.1 石墨烯的電子能帶 12
2.2.2 石墨烯的聲子能帶 14
2.3 石墨烯的電學特性與應用 14
2.4 石墨烯的光學特性與應用 15
2.5 拉曼光譜分析 16
2.5.1 拉曼基本原理 17
2.5.2 拉曼在石墨檢測之應用 17
2.5.3 石墨層數、缺陷的拉曼檢測 19

第三章石墨烯在絕緣基板上化學氣相成長 23
3.1 化學氣相沉積 23
3.1.1 化學氣相沉積反應機制 23
3.1.2 常壓氣相化學沉積 24
3.1.3 電漿輔助化學氣相沉積 25
3.2 高溫金屬催化成長石墨烯 26
3.2.1 銅表面成長機制 26
3.2.2 氣相銅粒子催化成長機制 27
3.3 低溫金屬催化成長 28
3.4 無金屬催化成長 29
3.4.1 實驗設備與結果 30

第四章石墨烯光元件 35
4.1 石墨烯蕭特基能障元件 35
4.1.1 蕭特基接面 35
4.1.2 石墨烯蕭特基接面元件 40
4.1.3 石墨烯/N 型單晶矽蕭特基接面光感測工原理 40
4.2 石墨烯光感測元件 47
4.2.1 光感測元件特性參數 49

第五章石墨烯光感測元件製作與分析 51
5.1 元件製作 51
5.1.1 轉移石墨烯元件製作 51
5.1.2 直接成長石墨烯元件製作 53
5.2 光電量測方法與設備 55
5.2.1 太陽光模擬器量測方法與設備 56
5.2.2 633nm He-Ne 雷測量測方法與設備 59
5.3 轉移石墨烯之光電響應 62
5.4 直接成長石墨烯之光電響應 68

第六章結論與未來展望 73

參考文獻 75

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