在現今的生活中，功率半導體元件已是不可或缺，且在市場的需求下，仍持續發展。隨著高功率密度需求的增長，大電流與高頻率為電源轉換器的新趨勢，電路的寄生參數對轉換器性能的影響越來越受重視，為提升電源轉換器的性能，模組設計必須以減少寄生電感和共模電容為目標，因此電路板佈線，為判別轉換器好壞的一重要指標。
量測平台設計不當將造成過大的寄生電感及電容，並在動態切換過程中，形成振盪導致量測誤差，甚至產生電壓或電流突波，使電路與元件損毀。因此，為達到正確量測與保護電路的效果，須預先使用不同方法對平台的分析及驗證。(1)將電流流經的電路分割成無數長導體，利用數學方式計算出自感及互感性，以長度及厚度為變數，建構出寄生電感數據，再將結果繪出圖形，方便觀察其變動趨勢。(2)利用電容及電感的共振特性，由已知的電容值推算出迴路上的寄生電感。(3)以功率開關的切換產生電流變動，並利用電感為抵抗電流快速變化而產生的電壓之特性，藉由突波估算出寄生電感的大小。
功率半導體元件可分為功率開關及功率整流器兩部分進行分析。為了方便選擇適當的功率半導體元件使用於電源轉換器，因此給予功率元件每段切換特性的時間相同定義，並設計低寄生電感的實體電路對其量測。

Nowadays, power semiconductors devices have become indispensable, and that the development continues in order to meet the market demand. Following the growing demand of high power density, power converters with large current and high frequency leads the new trend. The effect of parasitic parameters in a circuit on the performance of converter is getting more attention. In order to enhance the performance of power converters, the target of module design is to minimize the parasitic inductance and capacitance. Consequently, the circuit layout can be used as a determination of converter quality.
Improper design of measurement platform will result excessive parasitic inductance and capacitance, causing measurement errors during switching process. This can even cause excessive voltage and current spikes, which may damage the circuit and components. In order to achieve proper measurement and circuit protection, the preliminary of platform analysis and verification by different methods should be employed: (1) consider the bus bar as a set of fine wire elements, calculate the fine wire self-inductance and mutual-inductance mathematically, then develop the bus bar inductance table and graph with length and thickness as variables for trend observation; (2) use the resonance characteristics of inductor and capacitor to calculate the parasitic inductance from a known capacitance; and (3) use the characteristics of change in current will induce a voltage in the inductor, by switching the power switch to change current flow, the parasitic inductance can be estimated through the induced voltage.
Power semiconductors can be divided into power switches and power rectifiers for analysis. In order to easily select the appropriate power semiconductors for power converters, the same time definition of switching characteristics is applied to the power semiconductors, and a circuit with small parasitic inductance is designed to perform measurements.

摘要 I
Abstract II
致謝 III
目錄 IV
圖目錄 VII
表目錄 XI
第一章 緒論 1
1.1 簡介 1
1.2 研究方向 1
1.3 論文架構 2
第二章 文獻回顧 3
2.1 簡介 3
2.2 功率開關及整流器特性 3
2.2.1 功率開關切換特性 4
2.2.2 功率整流器反向回復特性 6
2.3 方波信號等效頻率 7
2.4 直流端線路結構設計 10
第三章 電路架構與分析 16
3.1 簡介 16
3.2 雙脈衝開關信號 17
3.3 感測器校正與差異 18
3.3.1 感測器準位校正 18
3.3.2 電流感測器差異比較 20
3.4 電容上的寄生電感 23
第四章 佈線設計與分析 24
4.1 簡介 24
4.2 方波信號等效頻率量測 26
4.3 疊層型匯流排電感計算 27
4.4 共振頻率測試 30
4.4.1 Bus Bar Ⅰ實驗結果 31
4.4.2 Bus Bar Ⅱ實驗結果 35
4.4.3 佈線迴路的寄生電感 39
4.5 寄生電感突波測試 41
4.5.1 Bus Bar Ⅰ實驗結果 42
4.5.2 Bus Bar Ⅱ實驗結果 44
4.6 結論 46
第五章 功率元件量測與分析 47
5.1 簡介 47
5.2 諧波共振頻率 47
5.2.1 匯流排之寄生電感的諧波影響 48
5.2.2 整流器之寄生電容的諧波影響 50
5.3 功率開關切換特性 52
5.4 功率整流器回復特性 55
5.5 結論 57
第六章 總結與未來工作 58
6.1 總結 58
6.2 未來工作 59
參考文獻 60
附錄A 63

[1] Witcher, J. 2002. Methodology for Switching Characterization of Power Devices and Modules. Blacksburg, Va.: University Libraries, Virginia Polytechnic Institute and State University.
[2] Wada, K., Ando, M. and Hino, A. 2013. "Design of DC-side Wiring Structure for High-Speed Switching Operation using SiC Power Devices", paper presented at Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE, Long Beach, CA, USA, 17-21 March. pp. 584-590.
[3] B32654A1104K datasheet, EPCOS, [online], available at www.epcos.com
[4] Ahmed, A., Coulbeck, L., Castellazzi, A. and Johnson, C. 2012. "Design and Test of a PCB Rogowski Coil for Very High dI/dt Detection", paper presented at Power Electronics and Motion Control Conference (EPE/PEMC), 2012 15th International, Novi Sad, 4-6 Sept. pp. DS1a.2-1-DS1a.2-4.
[5] Chen, Q., Li, H., Chen, X., Deng, Y. and Liu, Y. 2007. "PCB Rogowski Sensor Designs for Plasma Current Measurement", paper presented at Fusion Engineering, 2007. SOFE 2007. 2007 IEEE 22nd Symposium on, Albuquerque, NM, 17-21 June. pp. 1-4.
[6] Caponet, M., Profumo, F., De Doncker, R. and Tenconi, A. 2002. Low Stray Inductance Bus Bar Design and Construction for Good EMC Performance in Power Electronic Circuits. Power Electronics, IEEE Transactions on, 17 (2), pp. 225-231.
[7] CVR Information , T&M Research, available at www.tandmresearch.com
[8] Hefner, A., Singh, R., Lai, J., Berning, D., Bouche, S. and Chapuy, C. 2001. SiC Power Diodes Provide Breakthrough Performance for a Wide Range of Applications. Power Electronics, IEEE Transactions on, 16 (2), pp. 273-280.
[9] Lai, J., Hefner, A., Maitra, A. and Goodman, F. 2013. "Characterization of a Multilevel HV-IGBT Module for Distribution Applications", paper presented at Industry Applications Conference, 2006. 41st IAS Annual Meeting. Conference Record of the 2006 IEEE, Tampa, FL, 8-12 Oct. pp. 747-753.
[10] Lai, J., Leslie, L., Ferrell, J. and Nergaard, T. 2005. "Characterization of HV-IGBT for High-Power Inverter Applications", paper presented at Industry Applications Conference, 2005. Fortieth IAS Annual Meeting. Conference Record of the 2005, Hong Kong, 2-6 Oct. pp. 377-382 Vol. 1.
[11] Lai, J., Song, B., Rui, Z., Hefner, A. and Shen, D. 2001. Characteristics and Utilization of a New Class of Low On-Resistance MOS-Gated Power Device. Industry Applications, IEEE Transcations on, 37 (5), pp. 1282-1289.
[12] Meng, J., Ma, W., Pan, Q., Zhang, L. and Zhao, Z. 2006. Multiple Slope Switching Waveform Approximation to Improve Conducted EMI Spectral Analysis of Power Converters. Electromagnetic Compatibility, IEEE Transactions on, 48 (4), pp. 742-751.
[13] Park, S. and Jahns, T. 2003. Flexible dv/dt and di/dt Control Method for Insulated Gate Power Switches.Industry Applications, IEEE Transactions on, 39 (3), pp. 657-664.
[14] Tsuboi, K., Tsuji, M. and Yamada, E. 1999. A Simplified Method of Calculating Busbar Inductance and Its Application for Stray Resonance Analysis in an Inverter dc Link. Electrical Engineering in Japan, Scripta Technica on, 126 (3), pp. 1364-1374. [14]
[15] Xu, S., Liu, X. and Sun, W. 2010. Modeling of Power Metal-Oxide Semiconductor Field-Effect Transistor for the Analysis of Switching Characteristics in Half-Bridge Converters. Circuits, Devices & Systems, IET, 4 (4), pp. 327-336.
[16] Bryant, A., Lu, L., Santi, E., Hudgins, J. and Palmer, P. 2008. Modeling of IGBT Resistive and Inductive Turn-On Behavior. Industry Applications, IEEE Transactions on, 44 (3), pp. 904-914.