摘要
近年來高亮度以及高功率的LED需求量大增，因此，對於高亮度之LED量產技術需再以提升，以滿足未來高亮度LED於照明的應用。
目前常用於提升亮度的做法，業界常使用圖案化藍寶石基板(Patterned Sapphire Substrate, PSS)以及奈米級圖案化藍寶石基板(Nano-Pattern Sapphire Substrate, NPSS)。
本研究提出利用雷射干涉微影(Laser Interference Lithography)進行NPSS之圖案定義，其中雷射干涉微影，亦有分數種實行方式，本研究針對多次曝光干涉微影與多光束干涉微影之產能比較，利用數學模擬以了解此二種干涉微影系統之干涉條紋對比度以及均勻度，並利用數學運算比較多光束干涉微影及多次曝光干涉微影系統進行產能比較並與以及微觀巨觀上之優劣比較。
本研究也將利用運算結果將多光束干涉微影系統最佳化，並實際設計一能製作出符合業界規格NPSS之多光束雷射干涉簡易微影系統，並利用此干涉微影系統證實本研究於理論模擬運算部分為正確，並設計出一未來能應用於業界之NPSS微影設備，本研究亦將探討多光束干涉微影以及多次曝光干涉微影於數學上之優劣以及實務操作上之優劣，並探討於實務上要完成多光束干涉微影上需要進行探討之議題。





關鍵字：圖案化藍寶石基板、雷射干涉微影、奈米級圖案化藍寶石基板、多次曝光干涉微影、多光束干涉微影
 

The demand of high brightness and high power LED has increased over the past few decades. In industry, Pattern sapphire substrate (PSS) and nano-pattern sapphire substrate (NPSS) are the most common technique to increase the brightness and output power of LED. Therefore the technique of PSS and NPSS has been researched and developed. By patterning hexagonal 2D array on sapphire wafer in micro- or nano-scale, the output power of the LED can be highly improved.
In industry, steppers are the most commonly used technique for pattern sapphire. However, as the technology evolved, 4 inch wafer has brought up some new issues in the stepper system. The total thickness variation of 4” sapphire wafer is around 20-30 um and the linewidth of the pattern is down to nano-scale. These issues are causing stepper less competitive in industry.
This research provides a new approach, laser interference lithography (LIL), to fabricate PSS and NPSS. Yet, there are two ways to pattern hexagonal 2D array on sapphire by LIL. First is multi-exposure LIL (2-beam LIL with double exposures), and the second is multi-beam LIL (3-beam interference with single exposure). However, the throughput of these two types LIL has not to be revealed yet. This aim of this paper is to simulate and compare the advantages and the disadvantages of these two types of LIL.

第一章 緒論 1
1.1 LED/PSS&NPSS 1
1.2 雷射干涉微影及文獻回顧 4
1.3 研究動機與目標 11
第二章 多次曝光與多光束雷射干涉微影之比較及研究方法 13
2.1 干涉原理與公式 13
2.2 數學模型設計 16
2.3 雙光束干涉與多光束干涉極化方式之最佳化 19
2.4 雙光束干涉與Lloyd’s Mirror干涉微影以及多光束之產能微觀比較 28
2.5 雙光束干涉與Lloyd’s Mirror干涉微影以及多光束之產能巨觀比較 36
2.6 多光束干涉微影與多次曝光干涉微影之整體比較與結論 47
第三章 實驗架構及元件介紹 48
3.1 元件介紹 48
3.1.1 雷射 48
3.1.2 分光鏡(Beam Splitter) 52
3.1.3 偏振片(Polarizer) 53
3.1.4 半波片(Half-Wave Plate) 54
3.2 實驗架設 55
3.3 設計圖形 60
第四章 結果與討論 62
4.1 產能比較結果 63
4.2 曝光結果 64
4.3 實務上發現之結果 69
4.4 本研究尚待改善之議題 76
第五章 結論與未來展望 78
附錄 參考文獻 82

附錄 參考文獻
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