本研究主要係以標準CMOS製程與金屬濕蝕刻後製程技術來設計Fabry-Pérot光學干涉式微機電元件，以可調變之干涉共振腔達成光學強度與波長之調變與濾波等效能，可用於輔助顯示元件以及各種應用，未來甚至可應用於感測器、光通訊元件等元件。 微機電結構之製程採用金屬濕蝕刻，定義其光學干涉共振腔長度，而CMOS製程方面係利用台灣積體電路公司（TSMC）製程廠0.35m 2P4M製程，故在膜層堆疊上受限於多晶矽、鋁金屬、鎢金屬及二氧化矽、氮化鈦之材料，在其已知材料光學性質之條件下，本研究提出以光學干涉堆疊結構，利用後製程方式調整其二氧化矽薄膜厚度，使其作為半反射層以及可調變之二氧化矽共振腔，並結合出平面靜電致動器以調整空氣間隙共振腔長度，藉此上述兩種方式改變不同材料之光學共振腔長度，以達到光學干涉調變之效果。 本研究包含其元件之理論分析、設計、模擬、製造，與量測分析，微機電製程與CMOS製造技術，整合積體電路及光電二極體，並可透過相容之微機電製程開發微透鏡、微光開關等元件，並達成積體光學的概念。

This study implements the CMOS-MEMS Fabry-Pérot interference device (FPI) in standard TSMC 0.35m 2P4M CMOS platform by post-CMOS process. It might improve the performance of existing optical sensor, filters, and image sensors. The presented FPI could monolithically integrate with CMOS light sensor, and the single color reflective modulation is also achieved by color filter integration. The design was constrained by the design rule and the limited material in the specific layer-stacking. Following the principles, the concept in this thesis propose the stacking in Fabry-Pérot interference structure with the material of Poly-Si, Al, TiN, W, SiO2. The dual tunable cavities could decide the interference conditions to modulate the incident light. The features of this design are as follows, (1) two optical resonant cavities are provided by the transparent oxide layer and air-gap, (2) oxide thickness is determined by post-CMOS etching process, (3) tunable gap can be controlled by electrostatic force, (4) ring-type electrode is exploited as rib-reinforced structure for thin oxide membrane. In summary, the presented FPI could modulate optical intensity by varying the dielectric membrane thickness and resonant air-gap. Moreover, the thesis includes the theory analysis, optical design, simulation, fabrication, measurement. This CMOS-MEMS FPI device might be the component to approach “Integrated optics” for optical circuitry applications in the future.

目錄
中文摘要 I
Abstract II
表目錄 XI
第一章 緒論 1
1-1 前言 1
1-2 文獻回顧 3
1-2.1 光學微機電元件 3
1-2.2 Fabry-Pérot干涉光學元件之應用 6
1-2.3 CMOS-MEMS製程 9
1-3 研究動機 12
1-4 研究目標 14
第二章 元件之設計與分析 31
2-1 FABRY-PÉROT光學干涉原理 31
2-2 元件結構設計與模擬 35
2-3 光學干涉調變分析與模擬 41
第三章 製程與結果 58
3-1 元件之POST-CMOS製程設計 58
3-2 製程結果及討論 60
第四章 元件量測分析 75
4-1 元件結構量測 75
4-2 光學干涉調變量測 78
第五章 結論與未來工作 93
5-1 結論 93
5-2 未來工作 94
參考文獻 107

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