石墨烯因其具有獨特的原子結構和出色的性質，被喻為未來高效元件的重要材料。近年來已不斷吸引全世界的頂尖研究團隊加入。直至目前為止，已經有許多石墨烯合成方法被發表。然而，在未來實際工業應用方面，至今還沒有真正符合低成本且有效率的合成方式。因此之故，此研究成功地利用雷射快速且低耗能動態成長石墨烯於一般玻璃基板。雷射成長之直寫圖案且快速合成的特性，可以與現今的半導體光電產業相結合。
我們利用連續波長為808奈米的近紅外光雷射聚焦於目標基板上，直接寫入花樣圖案。石英基板上沉積以鎳薄膜做為金屬催化劑，而後旋轉塗布PMMA高分子或直接沉積非晶碳膜做為合成的碳源。經由雷射照射加熱後的區域會在鎳金屬薄膜的上下表面析出石墨烯薄膜。輔以各種材料分析，如拉曼光譜分析、穿透式電子顯微鏡分析等對雷射合成出的石墨烯膜薄做有系統的研究，並提出鎳催化雷射合成石墨烯的可能成長機制。
我們相信此種先進新穎的雷射快速合成石墨烯方式對於未來產業的應用發展方面，極具貢獻。

Graphene, owing to its unique structural and outstanding properties, is regarded as one of the most important materials for future high performance devices and has been attracted lots of research groups all over the world. Until now, there are many ways to synthesize graphene for research purposes. However, there are no convinced and cost-efficient way for real industrial applications. In this regard, we successfully demonstrate a rapid fabrication of graphene on glass substrate by laser. The properties of low power consumption and fast growth that is highly compatible with real semiconductor manufacturing process. It can be also considered as a fast and dynamic growth process.
The 808 nm near-infrared laser continuous wave laser is used to focus on glass substrate with a patterned nickel thin film (Ni TF) as metal catalyst. PMMA (or amorphous carbon) is deposited on top of the Ni TF as solid carbon source. As a result, few-layer graphene can be synthesized on both sides of Ni TF after the laser irradiation successfully. Microstructures were characterized by Raman spectroscopy and transmission electron microscopy (TEM). In addition, we propose a possible mechanism for this laser synthesis process on Ni.
We believe this novel, fast and convenient way for graphene synthesis can have a significant contribution to future applications.

Content
致謝 I
摘要 III
Abstract IV
Content V
Figure Caption IX
Table Caption XV
Chapter 1 Introduction 1
1.1. Motivation 1
1.1.1. Semiconductor Industry Today 1
1.1.2. Role of Graphene 3
1.1.3. Graphene for Application 4
1.1.4. Laser Fabrication Process 5
1.2. Experimental Propose 5
Chapter 2 Graphene Properties 7
2.1. Allotropes of Carbon 8
2.2. Crystallinity of Graphene 9
2.3. Electrical Properties of Graphene 13
2.4. Phonon Energy Band in Graphene 17
2.5. Optical Properties 19
2.6. Thermal Properties 20
2.7. Mechanical Properties 21
Chapter 3 Synthesis and Characterization of Graphene 23
3.1. Synthesis of Graphene 23
3.1.1. Mechanical Exfoliation 23
3.1.2. Thermal Decomposition of SiC 25
3.1.3. Chemical Derived Graphene 26
3.1.4. Chemical Vapor Deposition (CVD) 27
3.1.4.1. Graphene Growth by Carbon Segregation 28
3.1.4.2. Graphene Growth by Surface controlled Carbon Decomposition 36
3.1.4.3. Graphene Growth by Solid Carbon Source 40
3.1.5. Laser Process 41
3.2. Characterization of Graphene 43
3.2.1. Optical Identification 44
3.2.2. Scanning Probe Microscopy (SPM) 44
3.2.3. Transmission Electron Microscopy (TEM) 46
3.2.4. Raman Spectroscopy 47
3.2.4.1. Raman Scattering 47
3.2.4.2. Raman Spectrum of Graphene 50
Chapter 4 Laser Heating Process for Graphene Synthesis 56
4.1. Basic Concepts of Laser 56
4.1.1. “LASER” 56
4.1.2. Basic Operating Principle 57
4.1.3. Classification of Laser 58
4.1.3.1. Operative Modes 58
4.1.3.2. Media Species 58
4.2. Surface Engineering by Laser 59
4.2.1. Light Propagation in Materials 60
4.2.2. Energy Absorption – Optical Absorption Depth 62
4.2.3. Heat Transport – Thermal Diffusion Length 64
4.2.4. Material Response 65
4.3. Laser System Set Up 66
4.4. Beginning of Experiment 70
4.4.1. Preliminary Ideas 70
4.4.2. Selection of Solid Carbon Source 72
4.4.3. Sample Preparation 73
4.4.4. Experimental Process 73
4.4.5. Primary Experiment 75
a. Laser intensity 76
c. Cooling rate 77
d. Nickel thickness 78
Chapter 5 Top-segregated Graphene 79
5.1. PMMA 79
5.1.1. Laser Illumination Time 81
5.1.2. Laser Intensity 83
5.2. Amorphous Carbon 85
5.2.1. Illumination Time 86
5.2.2. Laser intensity 88
5.2.3. SEM Analysis 90
5.2.4. TEM Observation 92
Chapter 6 Back-segregated Graphene 93
6.1. Capping SiO2 93
6.2. Effective Factor 96
6.2.1. Nickel Thickness 96
6.2.2. Amounts of α-C 97
6.2.3. Laser Intensity 98
6.2.4. Illumination Time 100
6.3. Raman mapping and TEM observation 101
Chapter 7 Mechanism 103
7.1. Growth of Graphene by Segregation of Carbon 103
7.2. Laser Induced Carbon Diffusion 105
7.2.1. Concentration Gradient of Carbon 106
7.2.2. Thermal Gradient 108
7.3. Carbon Channel 110
7.4. Possible Mechanism 112
Chapter 8 Conclusion and Future Work 114
References 117

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