電阻式記憶體是下一世代非揮發性記憶體的重要研究領域，它具有快速的處理速度以及良好的記憶穩定性，其簡單的結構也是具有競爭力的一有利因素。然而電阻式記憶體仍具有一些問題需要被解決，例如在實際應用結構上產生的漏電路線問題，以及傳導機制的進一步確認與探討。本研究著重於解決漏電路線問題，嘗試開發出一具有非線性電阻的記憶體。
本研究探討了氮氧化鈦材料在電阻式記憶體領域上的應用，透過不同的厚度與成分的調整，以及不同電極材料的搭配，得到具有非線性電阻的電阻式記憶體元件，具有十分大的應用潛力。
使用穿透式電子顯微鏡與元素化學成分分析儀，對氮氧化鈦薄膜特性進行研究以進一步得知造成非線性電阻的原因，並透過電性分析推得此電阻式記憶體的傳導機制。

誌謝 ii
摘要 iv
Abstract v
Contents vi
List of Figures viii
Chapter 1 Introduction 1
Chapter 2 Literature Review 2
2.1 Non-volatile Memory 2
2.2 ReRAM 4
2.2.1 Introduction of ReRAM 4
2.2.2 The Mechanisms of ReRAM 8
2.2.3 Material Choices of ReRAM 13
2.2.4 Sneak Path Problem 15
2.3 Motivation of thesis 22
Chapter 3 Experimental Design 23
3.1 Experimental Flow 23
3.2 Material Analysis 26
3.2.1 Electrical Measurement 26
3.2.2 Thickness Measurement 27
3.2.3 Bonding Analysis 29
3.2.4 Electron Probe Microanalyzer 30
3.2.5 Transmission Electron Microscopy 31
Chapter 4 Results and Discussion 33
4.1 Multi-step Sputtered Titanium Oxynitride 33
4.2 Titanium oxynitride with different oxygen concentration 40
4.3 Titanium oxynitride with different nitrogen concentration 48
4.4 Conducting Mechanism and the Origin of Non-linear Behavior 53
Chapter 5 Conclusion 58
Future Prospect 59
References 61

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